DE112022001462A5 - Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip - Google Patents

Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip Download PDF

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Publication number
DE112022001462A5
DE112022001462A5 DE112022001462.8T DE112022001462T DE112022001462A5 DE 112022001462 A5 DE112022001462 A5 DE 112022001462A5 DE 112022001462 T DE112022001462 T DE 112022001462T DE 112022001462 A5 DE112022001462 A5 DE 112022001462A5
Authority
DE
Germany
Prior art keywords
radiation
semiconductor chip
emitting semiconductor
producing
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022001462.8T
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English (en)
Inventor
Laura Kreiner
Jelena Ristic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Ams Osram International GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams Osram International GmbH filed Critical Ams Osram International GmbH
Publication of DE112022001462A5 publication Critical patent/DE112022001462A5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE112022001462.8T 2021-07-09 2022-07-07 Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip Pending DE112022001462A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102021207298.4A DE102021207298A1 (de) 2021-07-09 2021-07-09 Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip
DE102021207298.4 2021-07-09
PCT/EP2022/068939 WO2023280990A1 (de) 2021-07-09 2022-07-07 Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip

Publications (1)

Publication Number Publication Date
DE112022001462A5 true DE112022001462A5 (de) 2023-12-28

Family

ID=82748633

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102021207298.4A Withdrawn DE102021207298A1 (de) 2021-07-09 2021-07-09 Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip
DE112022001462.8T Pending DE112022001462A5 (de) 2021-07-09 2022-07-07 Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102021207298.4A Withdrawn DE102021207298A1 (de) 2021-07-09 2021-07-09 Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip

Country Status (4)

Country Link
US (1) US20240313148A1 (de)
KR (1) KR20240024292A (de)
DE (2) DE102021207298A1 (de)
WO (1) WO2023280990A1 (de)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008048704A2 (en) 2006-03-10 2008-04-24 Stc.Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices
US8232566B2 (en) * 2009-05-04 2012-07-31 Lg Innotek Co., Ltd. Light emitting device, package, and system
DE102010012711A1 (de) 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
KR101710159B1 (ko) 2010-09-14 2017-03-08 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법
US9484492B2 (en) * 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
JP2020534687A (ja) * 2017-09-15 2020-11-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 劈開技法を用いて基板を除去する方法

Also Published As

Publication number Publication date
WO2023280990A1 (de) 2023-01-12
KR20240024292A (ko) 2024-02-23
DE102021207298A1 (de) 2023-01-12
US20240313148A1 (en) 2024-09-19

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