DE112020004041A5 - Halbleiterchip und verfahren zur herstellung eines halbleiterchips - Google Patents
Halbleiterchip und verfahren zur herstellung eines halbleiterchips Download PDFInfo
- Publication number
- DE112020004041A5 DE112020004041A5 DE112020004041.0T DE112020004041T DE112020004041A5 DE 112020004041 A5 DE112020004041 A5 DE 112020004041A5 DE 112020004041 T DE112020004041 T DE 112020004041T DE 112020004041 A5 DE112020004041 A5 DE 112020004041A5
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor chip
- making
- chip
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102019122945.6 | 2019-08-27 | ||
DE102019122945.6A DE102019122945A1 (de) | 2019-08-27 | 2019-08-27 | Halbleiterchip und verfahren zur herstellung eines halbleiterchips |
PCT/EP2020/071109 WO2021037457A1 (de) | 2019-08-27 | 2020-07-27 | Halbleiterchip und verfahren zur herstellung eines halbleiterchips |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112020004041A5 true DE112020004041A5 (de) | 2022-08-18 |
Family
ID=71948551
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102019122945.6A Withdrawn DE102019122945A1 (de) | 2019-08-27 | 2019-08-27 | Halbleiterchip und verfahren zur herstellung eines halbleiterchips |
DE112020004041.0T Pending DE112020004041A5 (de) | 2019-08-27 | 2020-07-27 | Halbleiterchip und verfahren zur herstellung eines halbleiterchips |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102019122945.6A Withdrawn DE102019122945A1 (de) | 2019-08-27 | 2019-08-27 | Halbleiterchip und verfahren zur herstellung eines halbleiterchips |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220336701A1 (de) |
DE (2) | DE102019122945A1 (de) |
WO (1) | WO2021037457A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102022120161A1 (de) | 2022-08-10 | 2024-02-15 | Ams-Osram International Gmbh | Optoelektronisches halbleiterbauelement mit epitaktisch gewachsener schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9508902B2 (en) * | 2005-02-21 | 2016-11-29 | Epistar Corporation | Optoelectronic semiconductor device |
US9287452B2 (en) * | 2010-08-09 | 2016-03-15 | Micron Technology, Inc. | Solid state lighting devices with dielectric insulation and methods of manufacturing |
US8680556B2 (en) * | 2011-03-24 | 2014-03-25 | Cree, Inc. | Composite high reflectivity layer |
JP6005346B2 (ja) * | 2011-08-12 | 2016-10-12 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
SG11201508811YA (en) * | 2013-04-26 | 2015-11-27 | Agency Science Tech & Res | High speed surface plasmon coupled light emitting diodes |
FR3038451B1 (fr) * | 2015-06-30 | 2017-07-21 | Commissariat Energie Atomique | Dispositif electroluminescent. |
DE102016103346A1 (de) | 2016-02-25 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips und strahlungsemittierender Halbleiterchip |
DE102016208717B4 (de) * | 2016-05-20 | 2022-03-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement mit erhöhter Effizienz und Verfahren zur Herstellung eines Bauelements |
-
2019
- 2019-08-27 DE DE102019122945.6A patent/DE102019122945A1/de not_active Withdrawn
-
2020
- 2020-07-27 DE DE112020004041.0T patent/DE112020004041A5/de active Pending
- 2020-07-27 WO PCT/EP2020/071109 patent/WO2021037457A1/de active Application Filing
- 2020-07-27 US US17/638,660 patent/US20220336701A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20220336701A1 (en) | 2022-10-20 |
WO2021037457A1 (de) | 2021-03-04 |
DE102019122945A1 (de) | 2021-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: H01L0033240000 Ipc: H01L0033360000 |