DE112021002165T5 - Halbleitervorrichtung und elektronische ausrüstung - Google Patents

Halbleitervorrichtung und elektronische ausrüstung Download PDF

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Publication number
DE112021002165T5
DE112021002165T5 DE112021002165.6T DE112021002165T DE112021002165T5 DE 112021002165 T5 DE112021002165 T5 DE 112021002165T5 DE 112021002165 T DE112021002165 T DE 112021002165T DE 112021002165 T5 DE112021002165 T5 DE 112021002165T5
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DE
Germany
Prior art keywords
capacitive element
semiconductor substrate
lower electrode
semiconductor device
capacitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021002165.6T
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German (de)
English (en)
Inventor
Masaaki Bairo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of DE112021002165T5 publication Critical patent/DE112021002165T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE112021002165.6T 2020-03-30 2021-02-17 Halbleitervorrichtung und elektronische ausrüstung Pending DE112021002165T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020060404 2020-03-30
JP2020-060404 2020-03-30
PCT/JP2021/005876 WO2021199754A1 (ja) 2020-03-30 2021-02-17 半導体装置及び電子機器

Publications (1)

Publication Number Publication Date
DE112021002165T5 true DE112021002165T5 (de) 2023-03-23

Family

ID=77929698

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021002165.6T Pending DE112021002165T5 (de) 2020-03-30 2021-02-17 Halbleitervorrichtung und elektronische ausrüstung

Country Status (5)

Country Link
US (1) US12170303B2 (https=)
JP (1) JP7645240B2 (https=)
CN (1) CN115315807A (https=)
DE (1) DE112021002165T5 (https=)
WO (1) WO2021199754A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11735616B2 (en) * 2021-12-29 2023-08-22 Nanya Technology Corporation Optical semiconductor device with integrated dies

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183739A (ja) 2003-12-19 2005-07-07 Ricoh Co Ltd 容量素子
JP2011254088A (ja) 2011-07-11 2011-12-15 Renesas Electronics Corp 半導体集積回路装置
JP2018037626A (ja) 2016-09-02 2018-03-08 旭化成エレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2018088648A (ja) 2016-11-29 2018-06-07 ルネサスエレクトロニクス株式会社 固体撮像装置
JP2018148528A (ja) 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04241449A (ja) 1991-01-16 1992-08-28 Hitachi Ltd 半導体集積回路装置
JP2006128468A (ja) 2004-10-29 2006-05-18 Seiko Epson Corp 半導体装置
JP4908006B2 (ja) * 2006-02-03 2012-04-04 株式会社東芝 半導体装置
JP2013143446A (ja) * 2012-01-10 2013-07-22 Sony Corp 容量素子、半導体装置及び電子機器
US8980708B2 (en) 2013-02-19 2015-03-17 Qualcomm Incorporated Complementary back end of line (BEOL) capacitor
US10264199B2 (en) * 2014-07-15 2019-04-16 Brillnics Inc. Solid-state imaging device, method for producing solid-state imaging device, and electronic apparatus using photoelectric conversion elements
WO2019063892A1 (fr) * 2017-09-27 2019-04-04 Airbus Defence And Space Sas Redimensionnement des entites de detection d'un capteur d'image matriciel hybride

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183739A (ja) 2003-12-19 2005-07-07 Ricoh Co Ltd 容量素子
JP2011254088A (ja) 2011-07-11 2011-12-15 Renesas Electronics Corp 半導体集積回路装置
JP2018037626A (ja) 2016-09-02 2018-03-08 旭化成エレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2018088648A (ja) 2016-11-29 2018-06-07 ルネサスエレクトロニクス株式会社 固体撮像装置
JP2018148528A (ja) 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器

Also Published As

Publication number Publication date
US20230207597A1 (en) 2023-06-29
JPWO2021199754A1 (https=) 2021-10-07
JP7645240B2 (ja) 2025-03-13
WO2021199754A1 (ja) 2021-10-07
US12170303B2 (en) 2024-12-17
CN115315807A (zh) 2022-11-08

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R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0027080000

Ipc: H10D0001000000