JP7645240B2 - 半導体装置及び電子機器 - Google Patents

半導体装置及び電子機器 Download PDF

Info

Publication number
JP7645240B2
JP7645240B2 JP2022511644A JP2022511644A JP7645240B2 JP 7645240 B2 JP7645240 B2 JP 7645240B2 JP 2022511644 A JP2022511644 A JP 2022511644A JP 2022511644 A JP2022511644 A JP 2022511644A JP 7645240 B2 JP7645240 B2 JP 7645240B2
Authority
JP
Japan
Prior art keywords
capacitance element
capacitance
semiconductor substrate
lower electrode
upper electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022511644A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021199754A1 (https=
Inventor
正昭 場色
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of JPWO2021199754A1 publication Critical patent/JPWO2021199754A1/ja
Application granted granted Critical
Publication of JP7645240B2 publication Critical patent/JP7645240B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2022511644A 2020-03-30 2021-02-17 半導体装置及び電子機器 Active JP7645240B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020060404 2020-03-30
JP2020060404 2020-03-30
PCT/JP2021/005876 WO2021199754A1 (ja) 2020-03-30 2021-02-17 半導体装置及び電子機器

Publications (2)

Publication Number Publication Date
JPWO2021199754A1 JPWO2021199754A1 (https=) 2021-10-07
JP7645240B2 true JP7645240B2 (ja) 2025-03-13

Family

ID=77929698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022511644A Active JP7645240B2 (ja) 2020-03-30 2021-02-17 半導体装置及び電子機器

Country Status (5)

Country Link
US (1) US12170303B2 (https=)
JP (1) JP7645240B2 (https=)
CN (1) CN115315807A (https=)
DE (1) DE112021002165T5 (https=)
WO (1) WO2021199754A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11735616B2 (en) * 2021-12-29 2023-08-22 Nanya Technology Corporation Optical semiconductor device with integrated dies

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128468A (ja) 2004-10-29 2006-05-18 Seiko Epson Corp 半導体装置
JP2007208101A (ja) 2006-02-03 2007-08-16 Toshiba Corp 半導体装置
JP2013143446A (ja) 2012-01-10 2013-07-22 Sony Corp 容量素子、半導体装置及び電子機器
JP2016511941A (ja) 2013-02-19 2016-04-21 クアルコム，インコーポレイテッド 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04241449A (ja) * 1991-01-16 1992-08-28 Hitachi Ltd 半導体集積回路装置
JP4371799B2 (ja) 2003-12-19 2009-11-25 株式会社リコー 容量素子
JP5512609B2 (ja) 2011-07-11 2014-06-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置
CN106664382B (zh) * 2014-07-15 2019-11-01 普里露尼库斯股份有限公司 固体摄影装置、固体摄影装置的制造方法以及电子机器
JP2018037626A (ja) 2016-09-02 2018-03-08 旭化成エレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2018088648A (ja) 2016-11-29 2018-06-07 ルネサスエレクトロニクス株式会社 固体撮像装置
JP2018148528A (ja) 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
WO2019063892A1 (fr) * 2017-09-27 2019-04-04 Airbus Defence And Space Sas Redimensionnement des entites de detection d'un capteur d'image matriciel hybride

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128468A (ja) 2004-10-29 2006-05-18 Seiko Epson Corp 半導体装置
JP2007208101A (ja) 2006-02-03 2007-08-16 Toshiba Corp 半導体装置
JP2013143446A (ja) 2012-01-10 2013-07-22 Sony Corp 容量素子、半導体装置及び電子機器
JP2016511941A (ja) 2013-02-19 2016-04-21 クアルコム，インコーポレイテッド 相補型バックエンドオブライン（ｂｅｏｌ）キャパシタ

Also Published As

Publication number Publication date
JPWO2021199754A1 (https=) 2021-10-07
WO2021199754A1 (ja) 2021-10-07
CN115315807A (zh) 2022-11-08
DE112021002165T5 (de) 2023-03-23
US20230207597A1 (en) 2023-06-29
US12170303B2 (en) 2024-12-17

Similar Documents

Publication Publication Date Title
CN105379249B (zh) 成像器件和电子装置
US9661246B2 (en) Solid state image pickup device having a capacitor structure made up of a plurality of capacitors
US10554912B2 (en) Semiconductor apparatus, solid-state image sensing apparatus, and camera system
JP7298661B2 (ja) 撮像素子及び撮像装置
JP7645240B2 (ja) 半導体装置及び電子機器
US20240243154A1 (en) Imaging sensor and imaging device
JP7695932B2 (ja) 半導体装置及び電子機器
WO2021033454A1 (ja) 半導体装置及び電子機器
US20250317669A1 (en) Image sensor and semiconductor device including capacitor structure
US20250160030A1 (en) Image sensor

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250107

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250116

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250204

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250303

R150 Certificate of patent or registration of utility model

Ref document number: 7645240

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150