CN115315807A - 半导体装置及电子设备 - Google Patents

半导体装置及电子设备 Download PDF

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Publication number
CN115315807A
CN115315807A CN202180023374.3A CN202180023374A CN115315807A CN 115315807 A CN115315807 A CN 115315807A CN 202180023374 A CN202180023374 A CN 202180023374A CN 115315807 A CN115315807 A CN 115315807A
Authority
CN
China
Prior art keywords
capacitive element
semiconductor substrate
lower electrode
capacitance
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180023374.3A
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English (en)
Chinese (zh)
Inventor
场色正昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN115315807A publication Critical patent/CN115315807A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN202180023374.3A 2020-03-30 2021-02-17 半导体装置及电子设备 Pending CN115315807A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-060404 2020-03-30
JP2020060404 2020-03-30
PCT/JP2021/005876 WO2021199754A1 (ja) 2020-03-30 2021-02-17 半導体装置及び電子機器

Publications (1)

Publication Number Publication Date
CN115315807A true CN115315807A (zh) 2022-11-08

Family

ID=77929698

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180023374.3A Pending CN115315807A (zh) 2020-03-30 2021-02-17 半导体装置及电子设备

Country Status (5)

Country Link
US (1) US12170303B2 (https=)
JP (1) JP7645240B2 (https=)
CN (1) CN115315807A (https=)
DE (1) DE112021002165T5 (https=)
WO (1) WO2021199754A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11735616B2 (en) * 2021-12-29 2023-08-22 Nanya Technology Corporation Optical semiconductor device with integrated dies

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04241449A (ja) * 1991-01-16 1992-08-28 Hitachi Ltd 半導体集積回路装置
JP4371799B2 (ja) 2003-12-19 2009-11-25 株式会社リコー 容量素子
JP2006128468A (ja) 2004-10-29 2006-05-18 Seiko Epson Corp 半導体装置
JP4908006B2 (ja) * 2006-02-03 2012-04-04 株式会社東芝 半導体装置
JP5512609B2 (ja) 2011-07-11 2014-06-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2013143446A (ja) * 2012-01-10 2013-07-22 Sony Corp 容量素子、半導体装置及び電子機器
US8980708B2 (en) 2013-02-19 2015-03-17 Qualcomm Incorporated Complementary back end of line (BEOL) capacitor
CN106664382B (zh) * 2014-07-15 2019-11-01 普里露尼库斯股份有限公司 固体摄影装置、固体摄影装置的制造方法以及电子机器
JP2018037626A (ja) 2016-09-02 2018-03-08 旭化成エレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2018088648A (ja) 2016-11-29 2018-06-07 ルネサスエレクトロニクス株式会社 固体撮像装置
JP2018148528A (ja) 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
WO2019063892A1 (fr) * 2017-09-27 2019-04-04 Airbus Defence And Space Sas Redimensionnement des entites de detection d'un capteur d'image matriciel hybride

Also Published As

Publication number Publication date
JPWO2021199754A1 (https=) 2021-10-07
JP7645240B2 (ja) 2025-03-13
WO2021199754A1 (ja) 2021-10-07
DE112021002165T5 (de) 2023-03-23
US20230207597A1 (en) 2023-06-29
US12170303B2 (en) 2024-12-17

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