DE112020003782T5 - Abbildungsvorrichtung oder Abbildungssystem - Google Patents

Abbildungsvorrichtung oder Abbildungssystem Download PDF

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Publication number
DE112020003782T5
DE112020003782T5 DE112020003782.7T DE112020003782T DE112020003782T5 DE 112020003782 T5 DE112020003782 T5 DE 112020003782T5 DE 112020003782 T DE112020003782 T DE 112020003782T DE 112020003782 T5 DE112020003782 T5 DE 112020003782T5
Authority
DE
Germany
Prior art keywords
area
image data
layer
circuit
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112020003782.7T
Other languages
German (de)
English (en)
Inventor
Seiichi Yoneda
Hiromichi Godo
Yusuke Negoro
Hiroki Inoue
Takahiro Fukutome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE112020003782T5 publication Critical patent/DE112020003782T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/95—Computational photography systems, e.g. light-field imaging systems
    • H04N23/951—Computational photography systems, e.g. light-field imaging systems by using two or more images to influence resolution, frame rate or aspect ratio
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/698—Control of cameras or camera modules for achieving an enlarged field of view, e.g. panoramic image capture
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/443—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected two-dimensional [2D] regions of the array, e.g. for windowing or digital zooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE112020003782.7T 2019-08-09 2020-07-28 Abbildungsvorrichtung oder Abbildungssystem Pending DE112020003782T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019147275 2019-08-09
JP2019-147275 2019-08-09
PCT/IB2020/057087 WO2021028754A1 (ja) 2019-08-09 2020-07-28 撮像装置、または撮像システム

Publications (1)

Publication Number Publication Date
DE112020003782T5 true DE112020003782T5 (de) 2022-07-07

Family

ID=74570580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112020003782.7T Pending DE112020003782T5 (de) 2019-08-09 2020-07-28 Abbildungsvorrichtung oder Abbildungssystem

Country Status (6)

Country Link
US (1) US11849234B2 (https=)
JP (2) JPWO2021028754A1 (https=)
KR (1) KR102879659B1 (https=)
CN (1) CN114175617A (https=)
DE (1) DE112020003782T5 (https=)
WO (1) WO2021028754A1 (https=)

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2944251B2 (ja) * 1991-05-15 1999-08-30 日本放送協会 固体撮像装置
JPH10155109A (ja) * 1996-11-22 1998-06-09 Canon Inc 撮像方法及び装置並びに記憶媒体
US6639626B1 (en) * 1998-06-18 2003-10-28 Minolta Co., Ltd. Photographing apparatus with two image sensors of different size
JP4497872B2 (ja) * 2003-09-10 2010-07-07 キヤノン株式会社 撮像装置
CN104393007A (zh) 2009-11-06 2015-03-04 株式会社半导体能源研究所 半导体装置
JP5220777B2 (ja) * 2010-01-21 2013-06-26 オリンパス株式会社 画像処理装置、撮像装置、プログラム及び画像処理方法
JP2012231377A (ja) * 2011-04-27 2012-11-22 Olympus Corp 撮像装置及び画像生成方法
JP5791975B2 (ja) * 2011-06-15 2015-10-07 オリンパス株式会社 固体撮像装置及び撮像装置
JP2013012888A (ja) * 2011-06-29 2013-01-17 Canon Inc 撮影装置、撮影システム、制御装置、イメージセンサの制御方法
KR101324088B1 (ko) * 2011-10-04 2013-10-31 주식회사 동부하이텍 이미지센서 및 이미지센서의 행간 평균화 방법
JP5681954B2 (ja) * 2011-11-30 2015-03-11 パナソニックＩｐマネジメント株式会社 撮像装置及び撮像システム
JP5821708B2 (ja) 2012-03-06 2015-11-24 トヨタ自動車株式会社 欠陥検査装置及び欠陥検査方法
WO2013190899A1 (ja) * 2012-06-19 2013-12-27 富士フイルム株式会社 撮像装置及び自動焦点調節方法
JP6234097B2 (ja) * 2013-07-18 2017-11-22 キヤノン株式会社 撮像装置およびその制御方法
JP2015211257A (ja) * 2014-04-24 2015-11-24 株式会社東芝 固体撮像装置
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2016206441A (ja) * 2015-04-23 2016-12-08 キヤノン株式会社 制御装置、撮像装置、制御方法、プログラム、および記録媒体
JP6512965B2 (ja) * 2015-07-01 2019-05-15 キヤノン株式会社 画像処理装置および画像処理方法
EP3358822A4 (en) * 2015-09-30 2019-05-29 Nikon Corporation IMAGING DEVICE AND IMAGE PROCESSING DEVICE
JP6758925B2 (ja) * 2016-06-01 2020-09-23 キヤノン株式会社 撮像装置及びその制御方法
CN110651468B (zh) 2017-05-26 2022-03-22 株式会社半导体能源研究所 摄像装置及电子设备
WO2019012370A1 (ja) 2017-07-14 2019-01-17 株式会社半導体エネルギー研究所 撮像装置および電子機器
US10582112B2 (en) * 2017-10-11 2020-03-03 Olympus Corporation Focus detection device, focus detection method, and storage medium storing focus detection program
KR102682859B1 (ko) * 2019-03-25 2024-07-09 에스케이하이닉스 주식회사 이미지 처리 시스템, 이미지 센서, 이미지 센서의 구동 방법

Also Published As

Publication number Publication date
US20220279140A1 (en) 2022-09-01
CN114175617A (zh) 2022-03-11
US11849234B2 (en) 2023-12-19
JP7823245B2 (ja) 2026-03-03
JPWO2021028754A1 (https=) 2021-02-18
JP2025083413A (ja) 2025-05-30
KR102879659B1 (ko) 2025-10-30
KR20220043138A (ko) 2022-04-05
WO2021028754A1 (ja) 2021-02-18

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R083 Amendment of/additions to inventor(s)
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H04N0005369000

Ipc: H04N0025700000

R012 Request for examination validly filed