DE112019004879A8 - Optoelektronischer halbleiterchip mit kontaktelementen und dessen herstellungsverfahren - Google Patents

Optoelektronischer halbleiterchip mit kontaktelementen und dessen herstellungsverfahren Download PDF

Info

Publication number
DE112019004879A8
DE112019004879A8 DE112019004879.1T DE112019004879T DE112019004879A8 DE 112019004879 A8 DE112019004879 A8 DE 112019004879A8 DE 112019004879 T DE112019004879 T DE 112019004879T DE 112019004879 A8 DE112019004879 A8 DE 112019004879A8
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor chip
contact elements
optoelectronic semiconductor
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112019004879.1T
Other languages
English (en)
Other versions
DE112019004879A5 (de
Inventor
Christian Leirer
Michael Schumann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112019004879A5 publication Critical patent/DE112019004879A5/de
Publication of DE112019004879A8 publication Critical patent/DE112019004879A8/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
DE112019004879.1T 2018-09-27 2019-09-26 Optoelektronischer halbleiterchip mit kontaktelementen und dessen erstellungsverfahren Ceased DE112019004879A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018123930.0A DE102018123930A1 (de) 2018-09-27 2018-09-27 Optoelektronischer Halbleiterchip mit erstem und zweitem Kontaktelement und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
DE102018123930.0 2018-09-27
PCT/EP2019/076065 WO2020064943A1 (de) 2018-09-27 2019-09-26 Optoelektronischer halbleiterchip mit kontaktelementen und dessen herstellungsverfahren

Publications (2)

Publication Number Publication Date
DE112019004879A5 DE112019004879A5 (de) 2021-06-17
DE112019004879A8 true DE112019004879A8 (de) 2021-07-29

Family

ID=68136355

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102018123930.0A Withdrawn DE102018123930A1 (de) 2018-09-27 2018-09-27 Optoelektronischer Halbleiterchip mit erstem und zweitem Kontaktelement und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
DE112019004879.1T Ceased DE112019004879A5 (de) 2018-09-27 2019-09-26 Optoelektronischer halbleiterchip mit kontaktelementen und dessen erstellungsverfahren

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102018123930.0A Withdrawn DE102018123930A1 (de) 2018-09-27 2018-09-27 Optoelektronischer Halbleiterchip mit erstem und zweitem Kontaktelement und Verfahren zur Herstellung des optoelektronischen Halbleiterchips

Country Status (3)

Country Link
US (1) US20210343914A1 (de)
DE (2) DE102018123930A1 (de)
WO (1) WO2020064943A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020124258A1 (de) * 2020-09-17 2022-03-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements
US11626538B2 (en) * 2020-10-29 2023-04-11 Lumileds Llc Light emitting diode device with tunable emission
EP4328985A1 (de) * 2022-08-24 2024-02-28 Albert-Ludwigs-Universität Freiburg Mikro-led, neurales implantat und verfahren zur herstellung einer mikro-led

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
CN100446288C (zh) * 2006-08-01 2008-12-24 金芃 通孔垂直结构的半导体芯片及其制造方法
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
DE102010025320B4 (de) * 2010-06-28 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
JP5698633B2 (ja) * 2011-09-21 2015-04-08 株式会社東芝 半導体発光装置、発光モジュール、および半導体発光装置の製造方法
DE102012217533A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
CN103311261B (zh) * 2013-05-24 2016-02-17 安徽三安光电有限公司 集成led发光器件及其制作方法
JP6182050B2 (ja) * 2013-10-28 2017-08-16 株式会社東芝 半導体発光装置
DE102014116935A1 (de) * 2014-11-19 2016-05-19 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102016205308A1 (de) * 2016-03-31 2017-10-05 Osram Opto Semiconductors Gmbh Verfahren zur herstellung einer vielzahl von halbleiterchips, halbleiterchip und modul mit einem halbleiterchip
TWI661584B (zh) * 2018-05-18 2019-06-01 光磊科技股份有限公司 發光晶粒、封裝結構及其相關製造方法

Also Published As

Publication number Publication date
US20210343914A1 (en) 2021-11-04
WO2020064943A1 (de) 2020-04-02
DE112019004879A5 (de) 2021-06-17
DE102018123930A1 (de) 2020-04-02

Similar Documents

Publication Publication Date Title
SG10201907920TA (en) Semiconductor Package And Method Of Manufacturing The Same
ITUB20161081A1 (it) Dispositivo a semiconduttore con regione conduttiva sepolta, e metodo di fabbricazione del dispositivo a semiconduttore
DE112019004879A8 (de) Optoelektronischer halbleiterchip mit kontaktelementen und dessen herstellungsverfahren
SG10201904480SA (en) Semiconductor chips and methods of manufacturing the same
DE112019001354A5 (de) Optoelektronischer halbleiterchip
SG10201905833RA (en) Semiconductor device and manufacturing method of the semiconductor device
SG10201905840VA (en) Semiconductor device and manufacturing method thereof
SG10201907013YA (en) Semiconductor Device And Method Of Manufacturing The Same
EP3522239A4 (de) Lichtemittierendes halbleiterelement und verfahren zur herstellung eines lichtemittierenden halbleiterelements
HK1252326A1 (zh) 半導體器件及其製造方法
DE112018000553A5 (de) Optoelektronischer Halbleiterchip
TWI800668B (zh) 晶片製造方法
GB201908089D0 (en) Semiconductor manufacturing method and semiconductor manufacturing device
EP3428977A4 (de) Lichtemittierendes halbleiterelement und verfahren zur herstellung davon
DE112021004257A5 (de) Optoelektronisches halbleiterbauteil und herstellungsverfahren
HK1246002A1 (zh) 半導體器件及其製造方法
DE112017004053A5 (de) Optoelektronischer Halbleiterchip
DE112019005721A5 (de) Optoelektronisches Halbleiterbauelement mit ersten Verbindungsbereichen und optoelektronische Vorrichtung
TWI799533B (zh) 半導體製造裝置
TWI799905B (zh) 半導體元件和半導體元件的製造方法
DE112018001450A5 (de) Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
TWI800493B (zh) 化合物半導體基板之製造方法及化合物半導體基板
EP3712962C0 (de) Halbleiter-mps-diode mit reduziertem stromverdichtungseffekt und deren herstellungsverfahren
SG11202104932XA (en) Semiconductor device and manufacturing method thereof, and structure used in manufacture of semiconductor device
DE102019120017A8 (de) Leistungs-halbleitervorrichtung und herstellungsverfahren

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R083 Amendment of/additions to inventor(s)
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final