DE112015001765A5 - Optoelektronisches Halbleiterelement, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterelementen - Google Patents

Optoelektronisches Halbleiterelement, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterelementen Download PDF

Info

Publication number
DE112015001765A5
DE112015001765A5 DE112015001765.8T DE112015001765T DE112015001765A5 DE 112015001765 A5 DE112015001765 A5 DE 112015001765A5 DE 112015001765 T DE112015001765 T DE 112015001765T DE 112015001765 A5 DE112015001765 A5 DE 112015001765A5
Authority
DE
Germany
Prior art keywords
optoelectronic semiconductor
producing
component
elements
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112015001765.8T
Other languages
English (en)
Inventor
Tilman Eckert
Stefan Brandl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112015001765A5 publication Critical patent/DE112015001765A5/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
DE112015001765.8T 2014-04-11 2015-03-12 Optoelektronisches Halbleiterelement, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterelementen Ceased DE112015001765A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014206995.5A DE102014206995A1 (de) 2014-04-11 2014-04-11 Optoelektronisches Halbleiterelement, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterelementen
DE102014206995.5 2014-04-11
PCT/EP2015/055153 WO2015154941A1 (de) 2014-04-11 2015-03-12 Optoelektronisches halbleiterelement, optoelektronisches halbleiterbauteil und verfahren zur herstellung einer mehrzahl von optoelektronischen halbleiterelementen

Publications (1)

Publication Number Publication Date
DE112015001765A5 true DE112015001765A5 (de) 2017-01-19

Family

ID=52682712

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102014206995.5A Withdrawn DE102014206995A1 (de) 2014-04-11 2014-04-11 Optoelektronisches Halbleiterelement, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterelementen
DE112015001765.8T Ceased DE112015001765A5 (de) 2014-04-11 2015-03-12 Optoelektronisches Halbleiterelement, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterelementen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102014206995.5A Withdrawn DE102014206995A1 (de) 2014-04-11 2014-04-11 Optoelektronisches Halbleiterelement, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterelementen

Country Status (3)

Country Link
US (1) US9722141B2 (de)
DE (2) DE102014206995A1 (de)
WO (1) WO2015154941A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015114661A1 (de) * 2015-09-02 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
DE102021123702A1 (de) * 2021-09-14 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische halbleiterschichtenfolge und optoelektronisches halbleiterbauelement
DE112023000449T5 (de) * 2022-03-17 2024-10-02 Ams-Osram Ag Halbleiterchip und verfahren zur herstellung einer mehrzahl von halbleiterchips

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3194503B2 (ja) * 1992-06-04 2001-07-30 キヤノン株式会社 化合物半導体装置及びその製造方法
EP0883195A1 (de) * 1997-06-03 1998-12-09 BARR & STROUD LIMITED Kopfnachführsystem, das eine LED mit fluoreszierender Beschichtung aufweist
US7675231B2 (en) * 2004-02-13 2010-03-09 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emitting diode display device comprising a high temperature resistant overlay
US7376169B2 (en) * 2005-03-07 2008-05-20 Joseph Reid Henrichs Optical phase conjugation laser diode
JP2006332288A (ja) * 2005-05-25 2006-12-07 Stanley Electric Co Ltd 車載監視カメラの照明用ｌｅｄ光源
DE102005061828B4 (de) 2005-06-23 2017-05-24 Osram Opto Semiconductors Gmbh Wellenlängenkonvertierendes Konvertermaterial, lichtabstrahlendes optisches Bauelement und Verfahren zu dessen Herstellung
WO2007125493A2 (en) * 2006-05-02 2007-11-08 Koninklijke Philips Electronics N.V. Color-stable phosphor converted led
CN200968110Y (zh) * 2006-09-18 2007-10-31 汉王科技股份有限公司 具有人脸识别功能的智能门锁
US20110043918A1 (en) * 2006-12-08 2011-02-24 David Thomas Crouse Devices and methods for light control in material composites
US8525287B2 (en) * 2007-04-18 2013-09-03 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
KR100804815B1 (ko) 2007-09-10 2008-02-20 (주)컴버스테크 외란광에 강한 적외선 카메라를 이용한 터치스크린
DE102009031915A1 (de) * 2009-07-06 2011-01-13 Osram Opto Semiconductors Gmbh Zusammensetzung zur Herstellung eines Filtermaterials für Strahlung, Verfahren zur Herstellung einer Zusammensetzung für ein Filtermaterial, Material zur Filterung von Strahlung und ein optoelektronisches Bauelement umfassend das Material
WO2011074581A1 (ja) 2009-12-15 2011-06-23 シャープ株式会社 表示装置
JP5775002B2 (ja) * 2010-01-29 2015-09-09 シチズン電子株式会社 発光装置の製造方法
DE102010009015A1 (de) 2010-02-24 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips
US8823406B2 (en) * 2010-10-20 2014-09-02 Cascade Micotech, Inc. Systems and methods for simultaneous optical testing of a plurality of devices under test
DE102010053809A1 (de) * 2010-12-08 2012-06-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zu dessen Herstellung und Verwendung eines derartigen Bauelements
US9281301B2 (en) * 2011-05-19 2016-03-08 Osram Opto Semiconductors Gmbh Optoelectronic device and method for producing optoelectronic devices
DE102012107578B4 (de) 2012-08-17 2021-02-18 Ic - Haus Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements sowie Messvorrichtung mit einem lichtemittierenden, optoelektronischen Bauelement
DE102012107794B4 (de) * 2012-08-23 2023-10-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Vorrichtung
US20150277047A1 (en) * 2012-09-12 2015-10-01 Life Bioscience, Inc. Methods of fabricating photoactive substrates suitable for electromagnetic transmission and filtering applications

Also Published As

Publication number Publication date
US20170025574A1 (en) 2017-01-26
US9722141B2 (en) 2017-08-01
WO2015154941A1 (de) 2015-10-15
DE102014206995A1 (de) 2015-10-15

Similar Documents

Publication Publication Date Title
DE112015003999A5 (de) Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE112016000691A5 (de) Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE112017005374A5 (de) Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil
DE112015004443A5 (de) Photonisch integrierter Chip, optisches Bauelement mit photonisch integriertem Chip und Verfahren zu deren Herstellung
DE112015005446A5 (de) Konversionselement, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung von Konversionselementen
DE112015004073A5 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE112015000814A5 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil
DE112015000888A5 (de) Verfahren zur Herstellung optoelektronischer Halbleiterbauteile und optoelektronisches Halbleiterbauteil
DE112016000901A5 (de) Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
DE112016001929A5 (de) Optoelektronische bauelementanordnung und verfahren zur herstellung einer vielzahl von optoelektronischen bauelementanordnungen
DE112015005495A5 (de) Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE112016001544A5 (de) Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE112014002611A5 (de) Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE112015001351A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen
DE112016002766A5 (de) Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE112016003602A5 (de) Optoelektronisches Bauelement umfassend ein Konversionselement, Verfahren zur Herstellung eines optoelektronischen Bauelements umfassend ein Konversionselement und Verwendung eines optoelektronischen Bauelements umfassend ein Konversionselement
DE112015004068A5 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE112015004631A5 (de) Laserbauelement und Verfahren zu seiner Herstellung
DE112015005127A5 (de) Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE112016002493A5 (de) Lichtemittierendes Halbleiterbauelement, lichtemittierendes Halbleiterbauteil und Verfahren zur Herstellung eines lichtemittierenden Halbleiterbauelements
DE112018002104A5 (de) Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode
DE112017001958A5 (de) Lichtemittierender Halbleiterchip, lichtemittierendes Bauelement und Verfahren zur Herstellung eineslichtemittierenden Bauelements
DE112014000633A5 (de) Halbleiterschichtenfolge und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE112016003142A5 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE112015003629A5 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R409 Internal rectification of the legal status completed
R409 Internal rectification of the legal status completed
R409 Internal rectification of the legal status completed
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final