DE112014004073B4 - Sublimationsofen - Google Patents

Sublimationsofen

Info

Publication number
DE112014004073B4
DE112014004073B4 DE112014004073.8T DE112014004073T DE112014004073B4 DE 112014004073 B4 DE112014004073 B4 DE 112014004073B4 DE 112014004073 T DE112014004073 T DE 112014004073T DE 112014004073 B4 DE112014004073 B4 DE 112014004073B4
Authority
DE
Germany
Prior art keywords
seed crystal
silicon carbide
crucible
sublimation
sublimation oven
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112014004073.8T
Other languages
German (de)
English (en)
Other versions
DE112014004073T5 (de
Inventor
Roman V. Drachev
Parthasarathy Santhanaraghavan
Andriy M. Andrukhiv
David S. Lyttle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTAT Corp
Original Assignee
GTAT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of DE112014004073T5 publication Critical patent/DE112014004073T5/de
Application granted granted Critical
Publication of DE112014004073B4 publication Critical patent/DE112014004073B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112014004073.8T 2013-09-06 2014-09-05 Sublimationsofen Active DE112014004073B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874633P 2013-09-06 2013-09-06
US61/874,633 2013-09-06
PCT/US2014/054293 WO2015035163A1 (en) 2013-09-06 2014-09-05 Apparatus for producing bulk silicon carbide

Publications (2)

Publication Number Publication Date
DE112014004073T5 DE112014004073T5 (de) 2016-06-09
DE112014004073B4 true DE112014004073B4 (de) 2026-04-30

Family

ID=52624265

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112014004073.8T Active DE112014004073B4 (de) 2013-09-06 2014-09-05 Sublimationsofen

Country Status (7)

Country Link
US (2) US10851473B2 (https=)
JP (2) JP6535005B2 (https=)
KR (1) KR102245508B1 (https=)
CN (2) CN105531405B (https=)
DE (1) DE112014004073B4 (https=)
TW (3) TWI671443B (https=)
WO (1) WO2015035163A1 (https=)

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KR102245506B1 (ko) * 2013-09-06 2021-04-28 지티에이티 코포레이션 탄화규소 전구체로부터 벌크 탄화규소를 제조하기 위한 방법 및 장치
CN105174296B (zh) * 2015-05-22 2016-12-07 鸿福晶体科技(安徽)有限公司 一种氢氧化铝焙烧专用组合坩埚盖
US10142086B2 (en) 2015-06-11 2018-11-27 At&T Intellectual Property I, L.P. Repeater and methods for use therewith
CN105543966A (zh) * 2016-02-02 2016-05-04 北京华进创威电子有限公司 一种碳化硅单晶生长用复合保温结构
TW201807272A (zh) * 2016-08-26 2018-03-01 國家中山科學研究院 一種用於成長單晶晶體之裝置
CN108946735B (zh) * 2017-05-19 2022-11-11 新疆天科合达蓝光半导体有限公司 一种碳化硅晶体生长用大粒径碳化硅粉料的合成方法
WO2020077847A1 (zh) * 2018-10-16 2020-04-23 山东天岳先进材料科技有限公司 大尺寸高纯碳化硅单晶、衬底及其制备方法和制备用装置
EP4081674A1 (en) 2019-12-27 2022-11-02 Wolfspeed, Inc. Large diameter silicon carbide wafers
DE102020117661A1 (de) * 2020-07-03 2022-01-20 Friedrich-Alexander-Universität Erlangen-Nürnberg Kristallzüchtungsanlage zur Herstellung eines Einkristalls
US12125701B2 (en) * 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
TWI774523B (zh) * 2021-08-19 2022-08-11 鴻海精密工業股份有限公司 單晶成長的方法
CN114990690B (zh) * 2022-06-30 2024-02-27 武汉大学 一种用于气相升华法制备碳化硅单晶的坩埚装置

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05330995A (ja) 1992-06-04 1993-12-14 Sharp Corp 炭化珪素単結晶の製造方法及びその装置
JPH06298594A (ja) 1993-04-12 1994-10-25 Sumitomo Metal Mining Co Ltd 単結晶育成装置
JPH06316499A (ja) 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
US5944890A (en) 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
WO2001063020A1 (en) 2000-02-15 2001-08-30 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
US20020083892A1 (en) 2000-12-28 2002-07-04 Hiroyuki Kondo Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal
US6451112B1 (en) 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
US20030094132A1 (en) 2001-02-14 2003-05-22 Vodakov Yury Alexandrovich Apparatus for growing low defect density silicon carbide
CN1570225A (zh) 2003-04-24 2005-01-26 奥克麦蒂克有限公司 通过气相淀积制备单晶的设备和方法
US20070283880A1 (en) 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
US20080026591A1 (en) 2006-07-28 2008-01-31 Caracal, Inc. Sintered metal components for crystal growth reactors
JP2011168431A (ja) 2010-02-18 2011-09-01 Mitsubishi Electric Corp 単結晶の製造装置
US20110214606A1 (en) 2010-03-04 2011-09-08 Bridgestone Corporation Apparatus and method for producing silicon carbide single crystal
US20120032150A1 (en) 2010-06-29 2012-02-09 Mikroelektro Semiconductor component, method of producing a semiconductor component, semiconductor device
CN102414349A (zh) 2009-11-30 2012-04-11 住友电气工业株式会社 制造单晶的方法
US20120103249A1 (en) 2009-03-26 2012-05-03 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus
KR20120139398A (ko) 2011-06-17 2012-12-27 동의대학교 산학협력단 4Ｈ-ＳｉＣ단결정 성장방법 및 성장장치
JP2013124196A (ja) 2011-12-14 2013-06-24 Sumitomo Electric Ind Ltd 種結晶の接着状態の検査方法
US20140158042A1 (en) 2011-07-29 2014-06-12 Lg Innotek Co., Ltd. Apparatus for fabricating ingot
US20140220298A1 (en) 2013-02-05 2014-08-07 Dow Corning Corporation Sic crystal with low dislocation density
EP2954101B1 (en) 2013-02-05 2020-02-19 DDP Specialty Electronic Materials US 9, LLC Method and system for forming a sic crystal

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001063020A (ja) 1999-08-26 2001-03-13 Ricoh Co Ltd インクジェット記録装置
JP4450118B2 (ja) * 1999-10-15 2010-04-14 株式会社デンソー 炭化珪素単結晶の製造方法
JP2007314358A (ja) * 2006-05-23 2007-12-06 Bridgestone Corp 炭化ケイ素単結晶の製造装置及びその製造方法
EP2035604A1 (en) * 2006-06-23 2009-03-18 Rec Scanwafer AS Device and method for production of semiconductor grade silicon
CN101580964B (zh) * 2008-05-12 2012-02-01 中国科学院物理研究所 一种用于生长高质量碳化硅晶体的籽晶托
JP5102697B2 (ja) * 2008-05-21 2012-12-19 株式会社ブリヂストン 炭化珪素単結晶の製造方法
JP2010095397A (ja) * 2008-10-15 2010-04-30 Nippon Steel Corp 炭化珪素単結晶及び炭化珪素単結晶ウェハ
CN101985773B (zh) * 2009-11-05 2013-12-18 新疆天科合达蓝光半导体有限公司 一种籽晶处理方法和生长碳化硅单晶的方法
JP5346821B2 (ja) 2010-01-15 2013-11-20 株式会社ブリヂストン 炭化ケイ素単結晶の製造装置
CN202643905U (zh) * 2012-04-28 2013-01-02 上海硅酸盐研究所中试基地 一种适用于PVT法生长SiC晶体系统的测温结构

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05330995A (ja) 1992-06-04 1993-12-14 Sharp Corp 炭化珪素単結晶の製造方法及びその装置
JPH06298594A (ja) 1993-04-12 1994-10-25 Sumitomo Metal Mining Co Ltd 単結晶育成装置
JPH06316499A (ja) 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
US5944890A (en) 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
US6451112B1 (en) 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
WO2001063020A1 (en) 2000-02-15 2001-08-30 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
US20020083892A1 (en) 2000-12-28 2002-07-04 Hiroyuki Kondo Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal
US20030094132A1 (en) 2001-02-14 2003-05-22 Vodakov Yury Alexandrovich Apparatus for growing low defect density silicon carbide
CN1570225A (zh) 2003-04-24 2005-01-26 奥克麦蒂克有限公司 通过气相淀积制备单晶的设备和方法
US20070283880A1 (en) 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
US20080026591A1 (en) 2006-07-28 2008-01-31 Caracal, Inc. Sintered metal components for crystal growth reactors
US20120103249A1 (en) 2009-03-26 2012-05-03 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus
CN102414349A (zh) 2009-11-30 2012-04-11 住友电气工业株式会社 制造单晶的方法
JP2011168431A (ja) 2010-02-18 2011-09-01 Mitsubishi Electric Corp 単結晶の製造装置
US20110214606A1 (en) 2010-03-04 2011-09-08 Bridgestone Corporation Apparatus and method for producing silicon carbide single crystal
US20120032150A1 (en) 2010-06-29 2012-02-09 Mikroelektro Semiconductor component, method of producing a semiconductor component, semiconductor device
KR20120139398A (ko) 2011-06-17 2012-12-27 동의대학교 산학협력단 4Ｈ-ＳｉＣ단결정 성장방법 및 성장장치
US20140158042A1 (en) 2011-07-29 2014-06-12 Lg Innotek Co., Ltd. Apparatus for fabricating ingot
JP2013124196A (ja) 2011-12-14 2013-06-24 Sumitomo Electric Ind Ltd 種結晶の接着状態の検査方法
US20140220298A1 (en) 2013-02-05 2014-08-07 Dow Corning Corporation Sic crystal with low dislocation density
EP2954100B1 (en) 2013-02-05 2019-05-15 Dow Silicones Corporation Method for manufacturing a sic crystal with low dislocation density
EP2954101B1 (en) 2013-02-05 2020-02-19 DDP Specialty Electronic Materials US 9, LLC Method and system for forming a sic crystal

Also Published As

Publication number Publication date
KR20160050087A (ko) 2016-05-10
CN105531405A (zh) 2016-04-27
TWI721452B (zh) 2021-03-11
JP6712759B2 (ja) 2020-06-24
KR102245508B1 (ko) 2021-04-28
JP2016532630A (ja) 2016-10-20
JP2019163206A (ja) 2019-09-26
TWI671443B (zh) 2019-09-11
TW201942425A (zh) 2019-11-01
WO2015035163A1 (en) 2015-03-12
TW201520385A (zh) 2015-06-01
CN110878430A (zh) 2020-03-13
JP6535005B2 (ja) 2019-06-26
TWI652381B (zh) 2019-03-01
CN110878430B (zh) 2021-10-22
US10851473B2 (en) 2020-12-01
US20210087706A1 (en) 2021-03-25
US20150068457A1 (en) 2015-03-12
CN105531405B (zh) 2019-11-15
TW201923173A (zh) 2019-06-16
US11591714B2 (en) 2023-02-28
DE112014004073T5 (de) 2016-06-09

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R082 Change of representative

Representative=s name: MANITZ FINSTERWALD PATENT- UND RECHTSANWALTSPA, DE

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R018 Grant decision by examination section/examining division