DE112013006709T5 - Vanadium dotiertes SiC-Monokristall und Verfahren hierzu - Google Patents

Vanadium dotiertes SiC-Monokristall und Verfahren hierzu Download PDF

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Publication number
DE112013006709T5
DE112013006709T5 DE112013006709.9T DE112013006709T DE112013006709T5 DE 112013006709 T5 DE112013006709 T5 DE 112013006709T5 DE 112013006709 T DE112013006709 T DE 112013006709T DE 112013006709 T5 DE112013006709 T5 DE 112013006709T5
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DE
Germany
Prior art keywords
sic
growth
vanadium
carrier gas
gaseous
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Pending
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DE112013006709.9T
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German (de)
English (en)
Inventor
E. Anderson Thomas
Michael C. Nolan
Bryan K. Brouhard
Ilya Zwieback
K. Gupta Avinash
E. Ruland Gary
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Coherent Corp
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II VI Inc
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Publication of DE112013006709T5 publication Critical patent/DE112013006709T5/de
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112013006709.9T 2013-02-21 2013-11-12 Vanadium dotiertes SiC-Monokristall und Verfahren hierzu Pending DE112013006709T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361767318P 2013-02-21 2013-02-21
US61/767,318 2013-02-21
US14/064,604 2013-10-28
US14/064,604 US9322110B2 (en) 2013-02-21 2013-10-28 Vanadium doped SiC single crystals and method thereof
PCT/US2013/069630 WO2014130108A1 (en) 2013-02-21 2013-11-12 Vanadium doped sic single crystals and method thereof

Publications (1)

Publication Number Publication Date
DE112013006709T5 true DE112013006709T5 (de) 2015-11-26

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DE112013006709.9T Pending DE112013006709T5 (de) 2013-02-21 2013-11-12 Vanadium dotiertes SiC-Monokristall und Verfahren hierzu

Country Status (5)

Country Link
US (1) US9322110B2 (enExample)
JP (1) JP6272360B2 (enExample)
CN (1) CN105209671B (enExample)
DE (1) DE112013006709T5 (enExample)
WO (1) WO2014130108A1 (enExample)

Cited By (4)

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DE102021123991A1 (de) 2021-09-16 2023-03-16 Pva Tepla Ag PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
DE102022123747A1 (de) * 2022-09-16 2024-03-21 Pva Tepla Ag PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
DE102022123757A1 (de) * 2022-09-16 2024-03-21 Pva Tepla Ag Apparatur, Tragrahmen für eine Apparatur und PVT-Verfahren zum prozesssicheren Herstellen von Einkristallen
WO2024056138A1 (de) * 2022-09-16 2024-03-21 Pva Tepla Ag Pvt-verfahren und apparatur zum prozesssicheren herstellen von einkristallen

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CN105274624B (zh) * 2015-10-09 2017-09-29 张家港市东大工业技术研究院 一种利用微波辐照制备钒掺杂半绝缘碳化硅的方法
JP6675197B2 (ja) * 2015-12-28 2020-04-01 昭和電工株式会社 炭化珪素単結晶の製造装置
CN105568385A (zh) * 2016-01-22 2016-05-11 山东大学 一种掺锗SiC体单晶材料的生长方法
CN108149315B (zh) * 2018-01-24 2020-10-23 中国科学院上海硅酸盐研究所 晶体生长用坩埚以及释放碳化硅晶体热应力的方法
CN109402731B (zh) * 2018-10-17 2021-01-15 福建北电新材料科技有限公司 一种高纯半绝缘碳化硅晶体生长装置及其方法
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
CN110699752B (zh) * 2019-10-30 2022-03-22 安徽微芯长江半导体材料有限公司 分步生长弱磁性Fe-V共掺杂SiC晶体的方法
EP4053893A4 (en) * 2019-10-31 2023-11-15 Kyocera Corporation Wiring board, electronic device, and electronic module
CN110904501B (zh) * 2019-11-13 2022-03-29 安徽微芯长江半导体材料有限公司 晶体生长用籽晶下置式装置
CN111172592B (zh) * 2019-12-24 2021-03-26 山东天岳先进科技股份有限公司 一种掺杂碳化硅单晶、衬底及制备方法和使用的装置
CN113249795A (zh) * 2020-02-11 2021-08-13 稳晟材料科技股份有限公司 碳化硅长晶设备及其长晶方法
CN111232980A (zh) * 2020-03-23 2020-06-05 攀钢集团攀枝花钢铁研究院有限公司 碳化钒粉末的制备方法
TWI908796B (zh) 2020-05-11 2025-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 減輕方法及反應器系統
CN111534854B (zh) * 2020-06-12 2021-07-13 北京北方华创微电子装备有限公司 晶体生长炉
CN113990938B (zh) * 2020-07-27 2024-12-06 环球晶圆股份有限公司 碳化硅晶片及其制备方法
US20220049373A1 (en) * 2020-08-11 2022-02-17 II-VI Delaware, Inc Sic single crystal(s) doped from gas phase
CN112144110B (zh) * 2020-09-23 2021-07-23 中电化合物半导体有限公司 Pvt法生长碳化硅晶体的生长方法
CN112853491A (zh) * 2020-12-31 2021-05-28 山西烁科晶体有限公司 一种掺杂碳化硅单晶及其制备方法
CN113279065B (zh) * 2021-04-01 2022-01-11 浙江大学杭州国际科创中心 一种IVB族原子和铝共掺制备p型4H-SiC的方法
CN114108094B (zh) * 2021-11-30 2023-06-27 江苏集芯半导体硅材料研究院有限公司 碳化硅晶体生长装置
CN114059156B (zh) * 2021-11-30 2023-03-28 江苏集芯半导体硅材料研究院有限公司 碳化硅晶体生长装置
CN114108096B (zh) * 2021-11-30 2023-06-02 江苏集芯半导体硅材料研究院有限公司 碳化硅晶体生长装置
WO2023157514A1 (ja) * 2022-02-17 2023-08-24 住友電気工業株式会社 炭化珪素基板、炭化珪素基板の製造方法および炭化珪素基板の製造装置
WO2024095640A1 (ja) * 2022-10-31 2024-05-10 住友電気工業株式会社 炭化珪素基板、エピタキシャル基板、半導体装置の製造方法および炭化珪素基板の製造方法
CN117187960A (zh) * 2023-09-21 2023-12-08 浙江晶越半导体有限公司 提高大尺寸晶体掺杂效率的坩埚及碳化硅晶体掺杂方法

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US6805745B2 (en) 2000-03-13 2004-10-19 Ii-Vi Incorporated Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
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US20080190355A1 (en) 2004-07-07 2008-08-14 Ii-Vi Incorporated Low-Doped Semi-Insulating Sic Crystals and Method
JP2006193348A (ja) * 2005-01-11 2006-07-27 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体基板およびその製造方法
US7608524B2 (en) * 2005-04-19 2009-10-27 Ii-Vi Incorporated Method of and system for forming SiC crystals having spatially uniform doping impurities
US8361227B2 (en) 2006-09-26 2013-01-29 Ii-Vi Incorporated Silicon carbide single crystals with low boron content
US7767022B1 (en) * 2006-04-19 2010-08-03 Ii-Vi Incorporated Method of annealing a sublimation grown crystal
DE102008063124B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat
DE102008063129B4 (de) 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat
WO2010111473A1 (en) 2009-03-26 2010-09-30 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus
DE102010029756B4 (de) * 2010-06-07 2023-09-21 Sicrystal Gmbh Herstellungsverfahren für einen SiC-Volumeneinkristall mit großer Facette und einkristallines SiC-Substrat mit homogener Widerstandsverteilung

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021123991A1 (de) 2021-09-16 2023-03-16 Pva Tepla Ag PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
DE102021123991B4 (de) 2021-09-16 2024-05-29 Pva Tepla Ag PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
US12209327B2 (en) 2021-09-16 2025-01-28 Pva Tepla Ag PVT-method and device for producing single crystals in a safe manner with regard to the process
DE102022123747A1 (de) * 2022-09-16 2024-03-21 Pva Tepla Ag PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
DE102022123757A1 (de) * 2022-09-16 2024-03-21 Pva Tepla Ag Apparatur, Tragrahmen für eine Apparatur und PVT-Verfahren zum prozesssicheren Herstellen von Einkristallen
WO2024056138A1 (de) * 2022-09-16 2024-03-21 Pva Tepla Ag Pvt-verfahren und apparatur zum prozesssicheren herstellen von einkristallen
WO2024056139A1 (de) * 2022-09-16 2024-03-21 Pva Tepla Ag Pvt-verfahren und apparatur zum prozesssicheren herstellen von einkristallen
DE102022123757B4 (de) 2022-09-16 2024-05-29 Pva Tepla Ag Apparatur, Tragrahmen für eine Apparatur und PVT-Verfahren zum prozesssicheren Herstellen von Einkristallen

Also Published As

Publication number Publication date
CN105209671B (zh) 2018-03-02
US9322110B2 (en) 2016-04-26
JP2016507467A (ja) 2016-03-10
WO2014130108A1 (en) 2014-08-28
WO2014130108A9 (en) 2015-04-16
JP6272360B2 (ja) 2018-01-31
US20140234194A1 (en) 2014-08-21
CN105209671A (zh) 2015-12-30

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