DE112013001929B4 - Kantenring für eine Abscheidungskammer - Google Patents

Kantenring für eine Abscheidungskammer

Info

Publication number
DE112013001929B4
DE112013001929B4 DE112013001929.9T DE112013001929T DE112013001929B4 DE 112013001929 B4 DE112013001929 B4 DE 112013001929B4 DE 112013001929 T DE112013001929 T DE 112013001929T DE 112013001929 B4 DE112013001929 B4 DE 112013001929B4
Authority
DE
Germany
Prior art keywords
raised part
approximately
edge ring
recess
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112013001929.9T
Other languages
German (de)
English (en)
Other versions
DE112013001929T5 (de
Inventor
Ashish Goel
Anantha Subramani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE112013001929T5 publication Critical patent/DE112013001929T5/de
Application granted granted Critical
Publication of DE112013001929B4 publication Critical patent/DE112013001929B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
DE112013001929.9T 2012-04-06 2013-03-13 Kantenring für eine Abscheidungskammer Active DE112013001929B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261621185P 2012-04-06 2012-04-06
US61/621,185 2012-04-06
PCT/US2013/030948 WO2013151703A1 (en) 2012-04-06 2013-03-13 Edge ring for a deposition chamber

Publications (2)

Publication Number Publication Date
DE112013001929T5 DE112013001929T5 (de) 2014-12-24
DE112013001929B4 true DE112013001929B4 (de) 2026-07-16

Family

ID=49291383

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112013001929.9T Active DE112013001929B4 (de) 2012-04-06 2013-03-13 Kantenring für eine Abscheidungskammer

Country Status (7)

Country Link
US (1) US9376752B2 (enExample)
JP (1) JP6141405B2 (enExample)
KR (1) KR102129844B1 (enExample)
CN (1) CN104205295B (enExample)
DE (1) DE112013001929B4 (enExample)
TW (1) TWI568875B (enExample)
WO (1) WO2013151703A1 (enExample)

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US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
CN106463445B (zh) 2014-05-21 2020-09-04 应用材料公司 热处理基座
KR102401501B1 (ko) * 2014-12-19 2022-05-23 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 챔버를 위한 에지 링
US10658222B2 (en) * 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
USD810705S1 (en) * 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
US9932668B2 (en) 2015-10-26 2018-04-03 Tango Systems Inc. Physical vapor deposition system using backside gas cooling of workpieces
JP6688385B2 (ja) * 2016-07-06 2020-04-28 株式会社アルバック 成膜装置、プラテンリング
KR102641441B1 (ko) 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리
USD839224S1 (en) 2016-12-12 2019-01-29 Ebara Corporation Elastic membrane for semiconductor wafer polishing
KR102806341B1 (ko) 2017-01-04 2025-05-12 삼성전자주식회사 포커스 링 및 이를 포함하는 플라즈마 처리 장치
TWI756496B (zh) 2017-11-27 2022-03-01 台灣積體電路製造股份有限公司 加熱台以及具有加熱台的設備
JP7078745B2 (ja) * 2018-10-30 2022-05-31 株式会社アルバック 真空処理装置
US12191127B2 (en) * 2018-10-31 2025-01-07 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus for physical vapor deposition and method for forming a layer
KR102406942B1 (ko) * 2019-09-16 2022-06-10 에이피시스템 주식회사 엣지 링 및 이를 포함하는 열처리 장치
US12692596B2 (en) 2020-01-31 2026-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Cover ring and ground shield for physical vapor deposition chamber
US11380575B2 (en) * 2020-07-27 2022-07-05 Applied Materials, Inc. Film thickness uniformity improvement using edge ring and bias electrode geometry
CN112501577B (zh) * 2020-11-30 2022-07-15 宁波江丰电子材料股份有限公司 一种晶圆固定环及其制备方法与应用
US11492699B2 (en) * 2021-02-17 2022-11-08 Applied Materials, Inc. Substrate temperature non-uniformity reduction over target life using spacing compensation
USD1071886S1 (en) * 2022-01-20 2025-04-22 Applied Materials, Inc. Substrate support for a substrate processing chamber
JP1741176S (ja) * 2022-10-20 2023-04-06 サセプタ用カバーベース
JP1741172S (ja) * 2022-10-20 2023-04-06 サセプタカバー
JP1745925S (ja) * 2022-10-20 2023-06-08 サセプタカバー
JP1745873S (ja) * 2022-10-20 2023-06-08 サセプタ
JP1741174S (ja) * 2022-10-20 2023-04-06 サセプタ
JP1746407S (ja) * 2023-01-11 2023-06-15 サセプタ
JP1746408S (ja) * 2023-01-11 2023-06-15 サセプタ
JP1746405S (ja) * 2023-01-11 2023-06-15 サセプタカバー
JP1746403S (ja) * 2023-01-11 2023-06-15 サセプタ
JP1746406S (ja) * 2023-01-11 2023-06-15 サセプタユニット
JP1746410S (ja) * 2023-01-11 2023-06-15 サセプタ

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US20090050272A1 (en) 2007-08-24 2009-02-26 Applied Materials, Inc. Deposition ring and cover ring to extend process components life and performance for process chambers
US7670436B2 (en) * 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7670446B2 (en) 2004-11-30 2010-03-02 The United States Of America As Represented By The Secretary Of The Navy Wet processing and loading of percussion primers based on metastable nanoenergetic composites

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US7670436B2 (en) * 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7670446B2 (en) 2004-11-30 2010-03-02 The United States Of America As Represented By The Secretary Of The Navy Wet processing and loading of percussion primers based on metastable nanoenergetic composites
US20090050272A1 (en) 2007-08-24 2009-02-26 Applied Materials, Inc. Deposition ring and cover ring to extend process components life and performance for process chambers

Also Published As

Publication number Publication date
WO2013151703A1 (en) 2013-10-10
DE112013001929T5 (de) 2014-12-24
TWI568875B (zh) 2017-02-01
KR102129844B1 (ko) 2020-07-03
JP2015519472A (ja) 2015-07-09
TW201348489A (zh) 2013-12-01
JP6141405B2 (ja) 2017-06-07
CN104205295A (zh) 2014-12-10
KR20150005556A (ko) 2015-01-14
US20130264035A1 (en) 2013-10-10
CN104205295B (zh) 2017-05-31
US9376752B2 (en) 2016-06-28

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R016 Response to examination communication
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0021203000

Ipc: H10P0014220000

R018 Grant decision by examination section/examining division