Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/50—Substrate holders
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
  • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/54—Controlling or regulating the coating process
  • C23C14/541—Heating or cooling of the substrates
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
  • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67115—Apparatus for thermal treatment mainly by radiation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
  • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
  • H01J37/3405—Magnetron sputtering
  • H01J37/3408—Planar magnetron sputtering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3441—Dark space shields

Definitions

• Embodiments disclosed herein relate to semiconductor processing. More specifically, embodiments disclosed herein relate to apparatus and methods for material and thermal processing of semiconductor substrates.
• thermal processes are common in semiconductor manufacturing in order to fabricate electronic devices on a substrate.
• semiconductor substrates are often subjected to a material process which includes deposition, implantation, or etching, and a thermal process may be performed before, during or after the material process.
• substrates are heated utilizing radiant sources, such as lamps, that direct radiant energy to the substrate to heat previously deposited material, anneal, and/or perform a rapid thermal process (RTP) on the substrate after a material process.
• RTP rapid thermal process
• the thermal process is typically performed in a separate chamber, which requires transfer of the substrate to another chamber. During the material process the substrate may be heated.
• an edge ring includes an annular body having an inner peripheral edge, a first surface, and a second surface opposite the first surface, a first raised member extending substantially orthogonally from the second surface, a second raised member extending from the second surface adjacent the first raised member and separated from the first raised member by a first depression, and a third raised member extending from the second surface adjacent the second raised member and separated by a second depression, the second depression comprising a sloped surface having a reflectivity value that is different than a reflectivity value of the first surface, the sloped surface configured to direct optical energy radially inward.
• an edge ring in another embodiment, includes an annular body having an inner peripheral edge, a first surface, and a second surface opposite the first surface, a first raised member extending from the second surface defining a planar surface adjacent the inner peripheral edge, a second raised member extending from the second surface radially outward of the first raised member and separated from the first raised member by a first depression, a third raised member extending from the second surface radially outward of the second raised member and separated by a second depression, and a recessed flange disposed radially outward of the third raised member, the recessed flange comprising a surface that is parallel to a plane of the first surface and substantially orthogonal to an outer peripheral surface of the body.
• an edge ring in another embodiment, includes an annular body having an inner peripheral edge, a first surface, and a second surface opposite the first surface, a first raised member extending orthogonally from the second surface defining a planar surface adjacent the inner peripheral edge that is substantially parallel to the first surface, a second raised member extending from the second surface radially outward of the first raised member and separated from the first raised member by a first depression, the second raised member having a first side and a second side, a third raised member extending from the second surface radially outward of the second raised member and separated by a second depression, the second depression comprising a tapered planar surface disposed in a plane having an angle that is substantially normal to a surface of the second side of the second raised member, and a recessed flange disposed radially outward of the third raised member, the recessed flange comprising a surface that is substantially orthogonal to an outer peripheral surface of the body.
• Figure 1 is a schematic cross-sectional view of a chamber according to one embodiment.
• Figure 2 is a top plan view of one embodiment of the edge ring shown in Figure 1 .
• Figure 3 is a cross-sectional view of the body of the edge ring along section lines 3-3 of Figure 2.
• Figure 4 is an enlarged cross-sectional view of a portion of the body of the edge ring shown in Figure 3.
• FIG. 1 is a schematic cross-sectional view of a deposition chamber 100 according to one embodiment.
• the deposition chamber 100 has an upper sidewall 102, a lower sidewall 103, and a lid portion 104 defining a body 105 that encloses an interior volume 106 thereof.
• An adapter plate 107 may be disposed between the upper sidewall 102 and the lower sidewall 103.
• a substrate support, such as a pedestal 108, is disposed in the interior volume 106 of the deposition chamber 100.
• a substrate transfer port 109 is formed in the lower sidewall 103 for transferring substrates into and out of the interior volume 106.
• the deposition chamber 100 comprises a sputtering chamber, also known as a physical vapor deposition (PVD) chamber, capable of depositing, for example, titanium, aluminum oxide, aluminum, copper, tantalum, tantalum nitride, tungsten, or tungsten nitride on a substrate.
• PVD physical vapor deposition
• suitable PVD chambers include the ALPS ® Plus and SIP ENCORE ® PVD processing chambers, both commercially available from Applied Materials, Inc., Santa Clara, of California. It is contemplated that processing chambers available from other manufactures may also utilize the embodiments described herein.
• process gases may be flowed to the interior volume 106 from a gas source 1 10.
• the pressure of the interior volume 106 may be controlled by a pumping device 1 12 in communication with the interior volume 106.
• the lid portion 104 may support a sputtering source 1 14, such as a target.
• the sputtering source 1 14 may be coupled to a source assembly 1 16 comprising magnets and a power supply for the sputtering source 1 14.
• a collimator 1 18 may be positioned in the interior volume 106 between the sputtering source 1 14 and the pedestal 108.
• a shield tube 120 may be in proximity to the collimator 1 18 and interior of the lid portion 104.
• the collimator 1 18 includes a plurality of apertures to direct gas and/or material flux within the interior volume 106.
• the collimator 1 18 may be mechanically and electrically coupled to the shield tube 120.
• the collimator 1 18 is mechanically coupled to the shield tube 120, such as by a welding process, making the collimator 1 18 integral to the shield tube 120.
• the collimator 1 18 may be electrically floating within the chamber 100.
• the collimator 1 18 may be coupled to an electrical power source and/or electrically coupled to the lid portion 104 of the body 105 of the deposition chamber 100.
• the shield tube 120 may include a tubular body 121 having a recess 122 formed in an upper surface thereof.
• the recess 122 provides a mating interface with a lower surface of the collimator 1 18.
• the tubular body 121 of the shield tube 120 may include a shoulder region 123 having an inner diameter that is less than the inner diameter of the remainder of the tubular body 121 .
• the inner surface of the tubular body 121 transitions radially inward along a tapered surface 124 to an inner surface of the shoulder region 123.
• a shield ring 126 may be disposed in the chamber adjacent to the shield tube 120 and intermediate of the shield tube 120 and the adapter plate 107.
• the shield ring 126 may be at least partially disposed in a recess 128 formed by an opposing side of the shoulder region 123 of the shield tube 120 and an interior sidewall of the adapter plate 107.
• Through-holes 129 are also formed in the adapter plate 107.
• the through-holes 129 are in fluid communication with the recess 128 to provide increased gas flow through the interior volume 106.
• the shield ring 126 includes an axially projecting annular sidewall 127 that includes an inner diameter that is greater than an outer diameter of the shoulder region 123 of the shield tube 120.
• a radial flange 130 extends from the annular sidewall 127.
• the radial flange 130 may be formed at an angle greater than about ninety degrees (90°) relative to the inside diameter surface of the annular sidewall 127 of the shield ring 126.
• the radial flange 130 includes a protrusion 132 formed on a lower surface thereof.
• the protrusion 132 may be a circular ridge extending from the surface of the radial flange 130 in an orientation that is substantially parallel to the inside diameter surface of the annular sidewall 127 of the shield ring 126.
• the protrusion 132 is generally adapted to mate with a recessed flange 134 formed in an edge ring 136 disposed on the pedestal 108.
• the recessed flange 134 may be a circular groove formed in the edge ring 136.
• the substrate 138 (shown supported on lift pins 140) is centered relative to the longitudinal axis of the pedestal 108 by coordinated positioning calibration between the pedestal 108 and a robot blade (not shown). In this manner, the substrate 138 may be centered within the deposition chamber 100 and the shield ring 126 may be centered radially about the substrate 138 during processing.
• a robot blade (not shown) having a substrate 138 thereon is extended through the substrate transfer port 109.
• the pedestal 108 may be lowered to allow the substrate 138 to be transferred to the lift pins 140 extending from the pedestal 108.
• Lifting and lowering of the pedestal 108 and/or the lift pins 140 may be controlled by a drive 142 coupled to the pedestal 108.
• the substrate 138 may be lowered onto a substrate receiving surface 144 of the pedestal 108. With the substrate 138 positioned on the substrate receiving surface 144 of the pedestal 108, sputter deposition may be performed on the substrate 138.
• the edge ring 136 may be electrically insulated from the substrate 138 during processing.
• the substrate receiving surface 144 may include a height that is greater than a height of portions of the edge ring 136 adjacent the substrate 138 such that the substrate 138 is prevented from contacting the edge ring 136.
• the temperature of the substrate 138 may be controlled by utilizing thermal control channels 146 disposed in the pedestal 108.
• the substrate 138 may be elevated utilizing the lift pins 140 to a position that is spaced away from the pedestal 108.
• the elevated location may be proximate one or both of the shield ring 126 and a reflector ring 148 adjacent to the adapter plate 107.
• the adapter plate 107 includes one or more lamps 150 coupled thereto intermediate of a lower surface of the reflector ring 148 and a concave surface 152 of the adapter plate 107.
• the lamps 150 provide optical and/or radiant energy in the visible or near visible wavelengths, such as in the infrared (IR) and/or ultraviolet (UV) spectrum.
• the energy from the lamps 150 is focused radially inward toward the backside (i.e., lower surface) of the substrate 138 to heat the substrate 138 and the material deposited thereon.
• Reflective surfaces on the chamber components surrounding the substrate 138 such as the concave surface 152 of the adapter plate 107, serve to focus the energy toward the backside of the substrate 138 and away from other chamber components where the energy would be lost and/or not utilized.
• the adapter plate 107 may be coupled to a coolant source 154 to control the temperature of the adapter plate 107 during heating.
• the substrate 138 may be heated to a first temperature of about 300 degrees Celsius (°C) to about 400 °C, such as about 350 °C, in a few seconds.
• Heating of the substrate 138 to the first temperature may enable a reflow process or a silicidation process.
• the reflow process is utilized to reduce overhang of metal in recesses of the substrate 138.
• the silicidation process may be utilized to drive reactions between metal and silicon.
• the through-holes 129 formed in the adapter plate 107 may also be utilized for increased gas conductance during processing.
• Each of the through- holes 129 may include a diameter of about 0.40 inches to about 0.55 inches and the adapter plate 107 may include about 30 to about 70 through-holes 129.
• flow in the gap between the reflector ring 148 and the radial flange 130 in combination with flow through the through-holes 129 provide a combined conductance value of about 14.22 at about 400 °C.
• the heating method described herein has advantages with respect to a metal deposition process.
• the surface gains reflectivity.
• Absorption of optical and/or radiant energy is generally reduced on a metalized surface. Irradiation of the metalized surface is less effective than heating the surface opposite the metalized surface, for example the substrate back side.
• Improved energy absorption of silicon improves energy efficiency of the thermal treatment process, as opposed to the heating the metalized surface.
• the substrate 138 After heating the substrate to the first temperature, the substrate 138 is lowered to a position on the substrate receiving surface 144 of the pedestal 108.
• the substrate 138 may be rapidly cooled utilizing the thermal control channels 146 in the pedestal 108 via conduction.
• the temperature of the substrate may be ramped down from the first temperature to a second temperature in a matter of seconds to about a minute.
• the second temperature may be about room temperature, such as about 23 °C to about 30 °C, for example, about 25 °C.
• the substrate 138 may be removed from the deposition chamber 100 through the substrate transfer port 109 for further processing.
• Figure 2 is a top plan view of one embodiment of the edge ring 136 shown in Figure 1 .
• the edge ring 136 includes a body 200 that is annular or ring-shaped.
• the body 200 may be made of a ceramic material, such as aluminum oxide (AI2O3), and formed by a sintering process.
• the body 200 comprises an inner diameter 210 and an outer diameter 220.
• the inner diameter 210 is slightly less than a diameter of a substrate 138 (shown in Figure 1 ) and the outer diameter 220 is greater than or equal to an outer dimension of the pedestal 108 (shown in Figure 1 ).
• the body 200 may include one or more extensions 230A, 230B and 230C.
• the extensions 230A-230C may be configured as orientation features that extend radially inward from the inner diameter 210 of the body 200.
• the extensions 230A-230C are configured to engage with mating orientation features, such as depressions or other structures (not shown) disposed on the pedestal 108 (shown in Figure 1 ).
• the extensions 230A-230C are adapted to seat the body 200 of the edge ring 136 in a specific orientation with respect to the pedestal 108. This allows the edge ring 136 to be removed from the pedestal 108 for cleaning or replacement, and installation on the pedestal 108 while assuring proper alignment between the edge ring 136 and the pedestal 108.
• Each of the extensions 230A- 230C include a circumferential face 235 that extends radially inward from an inner peripheral surface 240 of the body 200.
• the circumferential face 235 interfaces with the body 200 by a transition surface 245 on each side of the circumferential face 235.
• the transition surfaces 245 may be a sharp corner or a contoured surface, such as a beveled, rounded or tapered surface.
• Each of the extensions 230A-230C may also include an upper surface 250 that is coplanar with the body 200 of the edge ring 136.
• the upper surface 250 may be substantially planar and the circumferential face 235 may extend downwardly (in the Z direction) at about 90 degrees from the plane of the upper surface 250.
• the circumferential face 235 may be rounded and include a radius between the transition surfaces 245 that is substantially similar to a radius of the inner peripheral surface 240 of the body 200. Alternatively, the circumferential face 235 may be flat or planar between the transition surfaces 245. [0025] In one embodiment, each of the extensions 230A-230C are substantially equally spaced angularly along the body 200 (e.g., about 120 degrees). In another embodiment, an angle between at least two of the extensions 230A-230C, such as an angle a between the extensions 230B and 230C, is less than an angle between an adjacent extension, such as an angle ⁇ between the extension 230A and extensions 230B and 230C.
• the angle a may be about 90 degrees to about 100 degrees, while the angle ⁇ may be about 130 degrees to about 135 degrees.
• the extensions 230A-230C may be utilized as indexing features to ensure the edge ring 136 is seated in a specific orientation with respect to the pedestal 108.
• Figure 3 is a cross-sectional view of the body 200 of the edge ring 136 along section lines 3-3 of Figure 2.
• the body 200 comprises a first surface 300 (i.e., lower surface) and a plurality of sloped surfaces 305 and 310 opposite the first surface 300.
• the body 200 also includes a height dimension defined by one or both of the apexes of a first sloped surface 305 and a second sloped surface 310.
• a planar surface 315 is defined on an upper surface of the inner peripheral surface 240 of the body 200.
• the planar surface 315 may be substantially parallel with the substrate receiving surface 144 of the pedestal 108 (shown in Figure 1 ).
• a first depression 320A is formed between the planar surface 315 and the first sloped surface 305.
• a second depression 320B is formed between the first sloped surface 305 and the second sloped surface 310. At least one of the first sloped surface 305 and the second sloped surface 310 define one or more reflective surfaces that may be utilized to reflect optical and/or radiant energy toward the backside of the substrate 138 (shown in Figure 1 ) during a substrate heating process.
• Figure 4 is an enlarged cross-sectional view of a portion of the body 200 of the edge ring 136 shown in Figure 3.
• the edge ring 136 comprises a second surface 400 (i.e. , upper surface) defined by a first raised member 405A, a second raised member 405B and a third raised member 405C.
• the upper surface 400 also includes the first depression 320A provided between the first raised member 405A and the second raised member 405B, and the second depression 320B provided between the second raised member 405B and the third raised member 405C.
• the upper surface 400 also includes a fourth depression (recessed flange 134) that is utilized to engage with the protrusion 132 of the shield ring 126 (shown in Figure 1 ) utilized to center the shield ring 126 with respect to the longitudinal axis of the pedestal 108, as described above.
• the third raised member 405C may comprise an apex 41 OA that may be substantially equal in height to an apex 410B of the second raised member 405B.
• the apexes 41 OA, 410B may be flat, as shown with apex 41 OA, or rounded, as shown with apex 410B.
• the recessed flange 134 comprises a surface 407 that is substantially orthogonal to an outer peripheral surface 408 of the body 200.
• the surface 407 may also be disposed in a plane that is substantially parallel to a plane of the apex 41 OA and/or a plane of the first surface 300.
• the first surface 300 may also include a depression 415 that extends radially inward of the inner peripheral surface 240 of the body 200.
• the first raised member 405A includes the planar surface 315, which is overlapped by the substrate 138 (shown in phantom) during a sputter deposition process.
• the substrate 138 is raised above the pedestal 108 (shown in Figure 1 ) and the edge ring 136, which remains on the pedestal 108.
• Energy from the lamps 150 disposed on the adapter plate 107 (both shown in Figure 1 ) is directed toward a backside 420 of the substrate 138.
• the energy from the lamps 150 is indirectly focused radially inward toward the backside 420 of the substrate 138.
• the reflective surfaces on the chamber components such as the concave surface 152 (shown in Figure 1 ) of the adapter plate 107, and the one or more reflective surfaces of the edge ring 136, focus the energy toward the backside 420 of the substrate 138.
• the body 200 is made of a ceramic material and typically includes an emissivity of about 0.75 to about 0.83.
• the second surface 400 therefore includes a coating 425 that is more reflective than the body 200 that is utilized to reflect primary energy 430A from the lamps 150 to the backside 420 of the substrate 138.
• the coating 425 may be a reflective metallic material, such as titanium, tantalum, tungsten, aluminum, copper, and alloys thereof or derivatives thereof, including oxides and nitrides of the metallic materials.
• the coating 425 comprises the same material as the sputtering source 1 14 ( Figure 1 ).
• the coating 425 may be disposed on a portion of the first raised member 405A to the apex 41 OA of the third raised member, or any portion thereof.
• the reflectivity value of the coating 425 may be further enhanced by elevated temperatures during the heating process. In one aspect, the reflectivity value of the coating 425 is about 70 percent (%) to about 90 %, depending on the angle of incidence and/or the temperature of the heating process.
• the coating 425 is deposited on selected portions of the edge ring 136 prior to utilizing the edge ring 136 in the deposition chamber 100 ( Figure 1 ) such that the planar surface 315, apex 41 OA, and/or the surface 407 are bare (i.e., not covered with the coating 425).
• the metallic material may be deposited on the second surface 400, or portions thereof, by a conventional deposition method, such as PVD or chemical vapor deposition (CVD) to form the coating 425.
• the second surface 400 may be blanket coated and portions that interface with other components, such as the planar surface 315 and/or the recessed flange 134 may be shielded or cleaned prior to use of the edge ring 136.
• first sloped surface 305 and the second sloped surface 310 may be roughened to increase adherence of the coating 425.
• first sloped surface 305 and the second sloped surface 310, or portions thereof may be roughened, by bead blasting or other process, to include an average or mean surface roughness of about 75 Ra of about 120 Ra prior to deposition of the coating 425.
• the coating is deposited by the sputtering source 1 14 (shown in Figure 1 ) during a sputter deposition process on the substrate 138.
• the planar surface 315 is sheilded by the substrate 138 during the sputter deposition.
• the surface 407 of the recessed flange 134 recieves no deposition as the recessed flange 134 is typically out of the line of sight of the sputtering source 1 14 and the deposition material. Further, the surface 407 may be sheilded by the shield ring 126 during sputter deposition. As described above, portions of the first sloped surface 305 and the second sloped surface 310 may be roughened to increase adherence of the coating 425.
• the first sloped surface 305 and the second sloped surface 310 include specific angles to receive primary energy 430A from the lamps 150 and provide redirected secondary energy 430B that is focused on various portions of the backside 420 of the substrate 138.
• the second raised member 405B may include a first side 435A and a second side 435B comprising the first sloped surface 305.
• an angle 440 between the first side 435A and the second side 435B may be about 35 degrees to about 30 degrees, or less.
• the angle 445 between the second side 435B and vertical is about 15 degrees to about 10 degrees, or less.
• the second sloped surface 310 may comprise a tapered planar surface 438 disposed at an acute angle relative to the plane of the first surface 300.
• the plane of the tapered planar surface 438 is provided at an angle 450 relative to the plane of the first surface 300 of about 15 degrees to about 25 degrees.
• the surface of the second side 435B may be substantially normal to the plane of the tapered planar surface 438, which includes an angle of about 80 degrees to about 90 degrees. While the above described apparatus is described as in terms of specific embodiments of the invention, some aspects of the invention may be optimized based on thermal and/or on-substrate deposition uniformity considerations.
• angles 440, 445 and 450 may be optimized to receive primary energy 430A from the lamps 150 based on the angle of incidence of the primary energy 430A, and direct reflected secondary energy 430B at a desired incidence angle based on the geometry of the upper surface 400 relative to a known position of the substrate 138 during a thermal process.
• the height and/or angular orientation of the second raised member 405B may also be optimized based on film thickness uniformity.
• a deposition chamber for deposition of material on a first side of a substrate and irradiation on a second side of the substrate opposite the first side of the substrate.
• a deposition chamber may be a dual-function chamber capable of performing both a material deposition process and a thermal process on a substrate without removing the substrate from the chamber, thus eliminating the time needed to transport the substrate from a deposition chamber to a peripheral thermal treatment chamber.
• the deposition chamber has an optical energy assembly (e.g., lamps) positioned at a peripheral region of the deposition chamber, and one or more chamber components having one or more reflective surfaces ⁇ e.g., the adapter plate and the edge ring) focus optical and/or radiant energy toward the backside of the substrate.
• a coating is disposed on a portion of the edge ring to provide one of the one or more reflective surfaces.
• the coating may comprise a metallic material that is applied ex-situ by a coating process or in-situ during a sputter deposition process in the deposition chamber.
• Embodiments of the invention take advantage of the elevated temperature of the thermal process by allowing the optical and/or radiant energy to impinge the coating in order to increase the reflectivity of the coating and reflect the optical and/or radiant energy to the backside of the substrate where the energy may be easily absorbed.
• the geometry of the edge ring improves the angle of incidence of the reflected energy in order to facilitate control of the reflected energy and thus control of the temperature of the substrate.

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• 2013
  • 2013-03-07 US US13/789,222 patent/US9376752B2/en active Active
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