DE112012006961A5 - Verfahren zum Beschichten und Bonden von Substraten - Google Patents

Verfahren zum Beschichten und Bonden von Substraten Download PDF

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Publication number
DE112012006961A5
DE112012006961A5 DE112012006961.7T DE112012006961T DE112012006961A5 DE 112012006961 A5 DE112012006961 A5 DE 112012006961A5 DE 112012006961 T DE112012006961 T DE 112012006961T DE 112012006961 A5 DE112012006961 A5 DE 112012006961A5
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Germany
Prior art keywords
coating
bonding substrates
substrates
bonding
Prior art date
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Pending
Application number
DE112012006961.7T
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English (en)
Inventor
Markus Wimplinger
Bernhard Rebhan
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EV Group E Thallner GmbH
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EV Group E Thallner GmbH
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Publication date
Application filed by EV Group E Thallner GmbH filed Critical EV Group E Thallner GmbH
Publication of DE112012006961A5 publication Critical patent/DE112012006961A5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B23K20/026—Thermo-compression bonding with diffusion of soldering material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24—Preliminary treatment
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    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
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    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
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    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/802—Applying energy for connecting
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    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/83096—Transient conditions
    • H01L2224/83097—Heating
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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    • H01L2224/832—Applying energy for connecting
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    • H01L2224/838—Bonding techniques
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/30—Technical effects
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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SG11201600043RA (en) 2013-07-05 2016-02-26 Ev Group E Thallner Gmbh Method for bonding of contact surfaces
JP5877276B2 (ja) * 2013-10-07 2016-03-02 古河電気工業株式会社 接合構造および電子部材接合構造体
JP6504555B2 (ja) * 2014-11-06 2019-04-24 株式会社ムサシノエンジニアリング 原子拡散接合方法及び前記方法により接合された構造体
US9865565B2 (en) 2015-12-08 2018-01-09 Amkor Technology, Inc. Transient interface gradient bonding for metal bonds
DE102016217414A1 (de) * 2016-09-13 2018-03-15 Hema Maschinen- Und Apparateschutz Gmbh Verfahren zur Herstellung eines Verbunds aus Polycarbonat und Glas
US10037957B2 (en) 2016-11-14 2018-07-31 Amkor Technology, Inc. Semiconductor device and method of manufacturing thereof
US20230234160A1 (en) * 2022-01-24 2023-07-27 Applied Materials, Inc. Diffusion bonding of pure metal bodies

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US4077558A (en) * 1976-12-06 1978-03-07 International Business Machines Corporation Diffusion bonding of crystals
WO1994017551A1 (en) * 1993-01-19 1994-08-04 Hughes Aircraft Company Intermediate-temperature diffusion welding
WO1998041354A1 (en) * 1997-03-17 1998-09-24 Hitachi, Ltd. Method of solid-phase welding members
KR100510062B1 (ko) * 1998-08-18 2005-11-03 주식회사 하이닉스반도체 티타늄 질화막 형성 방법
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EP1920459A4 (de) * 2005-08-12 2012-07-25 Semiconductor Energy Lab Herstellungsverfahren für eine halbleiteranordnung
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US8094247B2 (en) * 2006-10-12 2012-01-10 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
JP5070557B2 (ja) * 2007-02-27 2012-11-14 武仁 島津 常温接合方法
KR100826284B1 (ko) * 2007-07-24 2008-04-30 (주)에피플러스 발광 다이오드 및 그 제조방법
JP5401661B2 (ja) * 2008-08-22 2014-01-29 株式会社ムサシノエンジニアリング 原子拡散接合方法及び前記方法により接合された構造体
JP2011249361A (ja) * 2010-05-21 2011-12-08 Toyota Motor Corp 半導体装置とその製造方法
US20120160903A1 (en) * 2010-05-31 2012-06-28 Kouichi Saitou Method of joining metal
JP2014100711A (ja) * 2011-02-28 2014-06-05 Sanyo Electric Co Ltd 金属接合構造および金属接合方法

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US9358765B2 (en) 2016-06-07
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JP2016500750A (ja) 2016-01-14
CN104661786A (zh) 2015-05-27
KR20150060666A (ko) 2015-06-03
TW201413786A (zh) 2014-04-01
AT525618A5 (de) 2023-04-15
AT525618B1 (de) 2023-07-15
KR101963933B1 (ko) 2019-03-29
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SG2014014674A (en) 2014-06-27
US20150224755A1 (en) 2015-08-13

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