DE112007001312T5 - Laserablationslack - Google Patents

Laserablationslack Download PDF

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Publication number
DE112007001312T5
DE112007001312T5 DE112007001312T DE112007001312T DE112007001312T5 DE 112007001312 T5 DE112007001312 T5 DE 112007001312T5 DE 112007001312 T DE112007001312 T DE 112007001312T DE 112007001312 T DE112007001312 T DE 112007001312T DE 112007001312 T5 DE112007001312 T5 DE 112007001312T5
Authority
DE
Germany
Prior art keywords
layer
paint
substrate
polymer binder
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112007001312T
Other languages
German (de)
English (en)
Inventor
Scott E. Phillips
Timothy John Tredwell
Lee W. Tutt
Glenn Thomas Pearce
Kelvin Nguyen
Ronald Myron Wexler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of DE112007001312T5 publication Critical patent/DE112007001312T5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/145—Infrared
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Structural Engineering (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Architecture (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laser Beam Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE112007001312T 2006-05-30 2007-05-15 Laserablationslack Withdrawn DE112007001312T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/420,817 US7867688B2 (en) 2006-05-30 2006-05-30 Laser ablation resist
US11/420,817 2006-05-30
PCT/US2007/011626 WO2007142788A2 (en) 2006-05-30 2007-05-15 Laser ablation resist

Publications (1)

Publication Number Publication Date
DE112007001312T5 true DE112007001312T5 (de) 2009-05-07

Family

ID=38790660

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112007001312T Withdrawn DE112007001312T5 (de) 2006-05-30 2007-05-15 Laserablationslack

Country Status (7)

Country Link
US (1) US7867688B2 (https=)
JP (1) JP2009539251A (https=)
KR (1) KR20090023361A (https=)
CN (1) CN101454720B (https=)
DE (1) DE112007001312T5 (https=)
TW (1) TW200805001A (https=)
WO (1) WO2007142788A2 (https=)

Cited By (1)

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WO2020104599A1 (de) * 2018-11-21 2020-05-28 Automotive Lighting Reutlingen Gmbh Verfahren zur farbenlackabtragenden laserbearbeitung eines lackierten werkstücks

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US20090061251A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by additive deposition
US8546067B2 (en) * 2008-03-21 2013-10-01 The Board Of Trustees Of The University Of Illinois Material assisted laser ablation
JP5094535B2 (ja) * 2008-05-07 2012-12-12 富士フイルム株式会社 凹部形成方法、凹凸製品の製造方法、発光素子の製造方法および光学素子の製造方法
DE102008030725B4 (de) * 2008-07-01 2013-10-17 Deutsche Cell Gmbh Verfahren zur Herstellung einer Kontakt-Struktur mittels einer Galvanikmaske
US20110097666A1 (en) * 2009-10-27 2011-04-28 Celin Savariar-Hauck Lithographic printing plate precursors
US8512937B2 (en) * 2010-03-04 2013-08-20 The Regents Of The University Of California Lithographic dry development using optical absorption
FR2959865B1 (fr) * 2010-05-07 2013-04-05 Commissariat Energie Atomique Diminution des effets de casquettes dues a l'ablation laser d'un niveau metallique par utilisation d'une couche de polymere photo- ou thermo-reticulable non reticule
CN101942235B (zh) * 2010-10-21 2013-04-24 东莞光群雷射科技有限公司 一种水转印镭射涂层及其制备方法
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TW201304092A (zh) * 2011-07-08 2013-01-16 矽品精密工業股份有限公司 半導體承載件暨封裝件及其製法
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DE102012100915A1 (de) * 2012-02-03 2013-08-22 Sandvik Surface Solutions Division Of Sandvik Materials Technology Deutschland Gmbh Verfahren zum Erzeugen von ätzresistenten Strukturen
US8980726B2 (en) * 2013-01-25 2015-03-17 Applied Materials, Inc. Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers
US8975177B2 (en) * 2013-03-14 2015-03-10 Intel Corporation Laser resist removal for integrated circuit (IC) packaging
US9412702B2 (en) 2013-03-14 2016-08-09 Intel Corporation Laser die backside film removal for integrated circuit (IC) packaging
GB2521417A (en) * 2013-12-19 2015-06-24 Swisslitho Ag Multiscale patterning of a sample with apparatus having both thermo-optical lithography capability and thermal scanning probe lithography capability
CA2931245C (en) 2015-05-26 2023-07-25 National Research Council Of Canada Metallic surface with karstified relief, forming same, and high surface area metallic electrochemical interface
US20170176856A1 (en) * 2015-12-21 2017-06-22 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working photoresist compositions for laser ablation and use thereof
US10547040B2 (en) 2016-04-14 2020-01-28 Applied Materials, Inc. Energy storage device having an interlayer between electrode and electrolyte layer
CN107459266B (zh) * 2017-08-09 2020-10-20 维达力实业(深圳)有限公司 盖板玻璃及其制作方法
US11054593B1 (en) * 2020-03-11 2021-07-06 Palo Alto Research Center Incorporated Chip-scale optoelectronic transceiver with microspringed interposer
US11705365B2 (en) * 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
US20220399206A1 (en) * 2021-06-11 2022-12-15 V-Finity Inc. Method for building conductive through-hole vias in glass substrates
US20240264530A1 (en) * 2022-12-28 2024-08-08 Intel Corporation Light responsive photoresists and methods
WO2025238824A1 (ja) * 2024-05-16 2025-11-20 Ｊｆｅスチール株式会社 エッチングレジスト被膜形成用被覆剤
WO2025238825A1 (ja) * 2024-05-16 2025-11-20 Ｊｆｅスチール株式会社 エッチングレジスト被膜付き方向性電磁鋼板及び方向性電磁鋼板の製造方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020104599A1 (de) * 2018-11-21 2020-05-28 Automotive Lighting Reutlingen Gmbh Verfahren zur farbenlackabtragenden laserbearbeitung eines lackierten werkstücks
CN113286678A (zh) * 2018-11-21 2021-08-20 马瑞利汽车照明(德国)有限公司 用于涂漆工件的除漆激光加工的方法
US12138711B2 (en) 2018-11-21 2024-11-12 Marelli Automotive Lighting Reutlingen (Germany) GmbH Method for the lacquer-removing laser machining of a painted workpiece

Also Published As

Publication number Publication date
CN101454720A (zh) 2009-06-10
US7867688B2 (en) 2011-01-11
WO2007142788A2 (en) 2007-12-13
TW200805001A (en) 2008-01-16
WO2007142788A3 (en) 2008-05-22
CN101454720B (zh) 2012-11-14
KR20090023361A (ko) 2009-03-04
US20070281247A1 (en) 2007-12-06
JP2009539251A (ja) 2009-11-12

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