DE112005002087A5 - ROM-Speicher mit reduziertem Leckstrom und Methode zum Beschreiben desselben - Google Patents

ROM-Speicher mit reduziertem Leckstrom und Methode zum Beschreiben desselben Download PDF

Info

Publication number
DE112005002087A5
DE112005002087A5 DE112005002087T DE112005002087T DE112005002087A5 DE 112005002087 A5 DE112005002087 A5 DE 112005002087A5 DE 112005002087 T DE112005002087 T DE 112005002087T DE 112005002087 T DE112005002087 T DE 112005002087T DE 112005002087 A5 DE112005002087 A5 DE 112005002087A5
Authority
DE
Germany
Prior art keywords
writing
same
rom memory
reduced leakage
leakage rom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112005002087T
Other languages
English (en)
Inventor
Siddharth Gupta
Jean-Yves Larguier
Gunther Lehmann
Yannick Martelloni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of DE112005002087A5 publication Critical patent/DE112005002087A5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2227—Standby or low power modes
DE112005002087T 2004-08-30 2005-08-18 ROM-Speicher mit reduziertem Leckstrom und Methode zum Beschreiben desselben Withdrawn DE112005002087A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004042105.6 2004-08-30
DE102004042105A DE102004042105A1 (de) 2004-08-30 2004-08-30 ROM-Speicher
PCT/EP2005/008952 WO2006024403A1 (de) 2004-08-30 2005-08-18 Rom-speicher mit reduziertem leckstrom und methode zum beschreiben desselben

Publications (1)

Publication Number Publication Date
DE112005002087A5 true DE112005002087A5 (de) 2007-07-19

Family

ID=35447732

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102004042105A Ceased DE102004042105A1 (de) 2004-08-30 2004-08-30 ROM-Speicher
DE112005002087T Withdrawn DE112005002087A5 (de) 2004-08-30 2005-08-18 ROM-Speicher mit reduziertem Leckstrom und Methode zum Beschreiben desselben

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102004042105A Ceased DE102004042105A1 (de) 2004-08-30 2004-08-30 ROM-Speicher

Country Status (3)

Country Link
US (1) US7633787B2 (de)
DE (2) DE102004042105A1 (de)
WO (1) WO2006024403A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7457143B2 (en) 2006-04-25 2008-11-25 Infineon Technologies Ag Memory device with shared reference and method
DE102006022867B4 (de) * 2006-05-16 2009-04-02 Infineon Technologies Ag Ausleseschaltung für oder in einem ROM-Speicher und ROM-Speicher
US8681566B2 (en) 2011-05-12 2014-03-25 Micron Technology, Inc. Apparatus and methods of driving signal for reducing the leakage current

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912674A (en) * 1986-01-16 1990-03-27 Hitachi, Ltd. Read-only memory
JPH0772996B2 (ja) * 1987-01-31 1995-08-02 株式会社東芝 不揮発性半導体メモリ
US5255235A (en) * 1987-05-15 1993-10-19 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory with dummy word lines connected to bit line potential adjusting capacitors
US5812461A (en) 1990-06-14 1998-09-22 Creative Integrated Systems, Inc. Driver circuit for addressing core memory and a method for the same
US5936883A (en) * 1996-03-29 1999-08-10 Sanyo Electric Co., Ltd. Split gate type transistor memory device
JP3694422B2 (ja) 1999-06-21 2005-09-14 シャープ株式会社 ロウデコーダ回路
JP2001351394A (ja) * 2000-06-12 2001-12-21 Nec Corp 半導体記憶装置
JP3856424B2 (ja) * 2000-12-25 2006-12-13 株式会社東芝 半導体記憶装置
JP4072127B2 (ja) * 2002-02-20 2008-04-09 株式会社ルネサステクノロジ 半導体集積回路
KR100470971B1 (ko) 2002-08-01 2005-03-10 삼성전자주식회사 리드 전용 메모리 셀, 이 셀의 프로그램 방법, 이 셀의레이아웃 방법, 및 이 셀을 구비한 리드 전용 메모리 장치
JP2004199738A (ja) * 2002-12-16 2004-07-15 Seiko Epson Corp 不揮発性記憶装置
JP3806084B2 (ja) * 2002-12-25 2006-08-09 株式会社東芝 強誘電体メモリ及びそのデータ読み出し方法

Also Published As

Publication number Publication date
US7633787B2 (en) 2009-12-15
DE102004042105A1 (de) 2006-03-09
US20080212356A1 (en) 2008-09-04
WO2006024403A1 (de) 2006-03-09

Similar Documents

Publication Publication Date Title
DE602006010481D1 (de) Speichersteuerung und Steuerverfahren dafür
DE602004029094D1 (de) Herstellungsverfahren dafür und schaumstoff und formkörper daraus
DE602005025091D1 (de) Piezooszillator und herstellungsverfahren dafür
DE602005003186D1 (de) Fluorkopolymer und dessen Verwendung
ATE435859T1 (de) Gyraseinhibitoren und deren verwendungen
DE602006011684D1 (de) Nichtflüchtiger Halbleiterspeicher mit drei Zuständen und dessen Betriebsverfahren
DE602006015628D1 (de) Em muster und herstellungsverfahren dafür
MA29039B1 (fr) Dibenzylamines et derives
DE602006009540D1 (de) L und herstellungsverfahren dafür
DE602006019010D1 (de) Speicheranordnung und auffrisch-justierverfahren
DE602006019033D1 (de) Fahrendes Objekt und dessen Steuerungsverfahren
DE602006020117D1 (de) Nadellager und herstellungsverfahren dafür
DE602005020158D1 (de) Glucanderivate und herstellungsverfahren dafür
DE602006020061D1 (de) Mucin-glycoprotein und anwendung davon
DE502006001806D1 (de) Steuerventil und Verfahren zur Herstellung desselben
DE602005022751D1 (de) Gleitelement und herstellungsverfahren dafür
DE602005000515D1 (de) Reissverschluss und Verfahren zum Herstellen desselben
DE602005017019D1 (de) Socken und herstellungsverfahren dafür
DE602006011510D1 (de) Prozesssystem und Prozessflüssigkeitszufuhrverfahren
DE112005000139A5 (de) Ventilnadel und Ventil
ATE423117T1 (de) Heterocyclische 7-aminoalkylidenylchinolone und - naphthyridone
DE602006010414D1 (de) Haarknüpfwerkzeug und herstellungsverfahren dafür
ATE414566T1 (de) Wirbelschichtranulationsverfahren und - vorrichtung
FI20055682A0 (fi) Läpivientiosa sekä menetelmä
DE602005012674D1 (de) Nachweiselement und nachweisverfahren

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee