DE1113990B - Verfahren zum gleichzeitigen Herstellen von zwei oder mehr Legierungskontakten an der gleichen Oberflaeche eines Halbleiterkoerpers - Google Patents
Verfahren zum gleichzeitigen Herstellen von zwei oder mehr Legierungskontakten an der gleichen Oberflaeche eines HalbleiterkoerpersInfo
- Publication number
- DE1113990B DE1113990B DEL32329A DEL0032329A DE1113990B DE 1113990 B DE1113990 B DE 1113990B DE L32329 A DEL32329 A DE L32329A DE L0032329 A DEL0032329 A DE L0032329A DE 1113990 B DE1113990 B DE 1113990B
- Authority
- DE
- Germany
- Prior art keywords
- alloy
- vapor
- semiconductor
- layers
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000956 alloy Substances 0.000 title claims description 47
- 229910045601 alloy Inorganic materials 0.000 title claims description 44
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims description 41
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 238000005275 alloying Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- SAZXSKLZZOUTCH-UHFFFAOYSA-N germanium indium Chemical compound [Ge].[In] SAZXSKLZZOUTCH-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 239000000126 substance Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Conductive Materials (AREA)
- Catalysts (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL247848D NL247848A (it) | 1959-01-29 | ||
| DEL32329A DE1113990B (de) | 1959-01-29 | 1959-01-29 | Verfahren zum gleichzeitigen Herstellen von zwei oder mehr Legierungskontakten an der gleichen Oberflaeche eines Halbleiterkoerpers |
| FR816829A FR1246537A (fr) | 1959-01-29 | 1960-01-27 | Procédé de fabrication de deux ou plusieurs contacts par alliage à la même surface d'un corps semi-conducteur |
| GB327460A GB927869A (en) | 1959-01-29 | 1960-01-29 | A method of producing two or more junctions on the same surface of a semi-conductor body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL32329A DE1113990B (de) | 1959-01-29 | 1959-01-29 | Verfahren zum gleichzeitigen Herstellen von zwei oder mehr Legierungskontakten an der gleichen Oberflaeche eines Halbleiterkoerpers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1113990B true DE1113990B (de) | 1961-09-21 |
Family
ID=7265871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEL32329A Pending DE1113990B (de) | 1959-01-29 | 1959-01-29 | Verfahren zum gleichzeitigen Herstellen von zwei oder mehr Legierungskontakten an der gleichen Oberflaeche eines Halbleiterkoerpers |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1113990B (it) |
| FR (1) | FR1246537A (it) |
| GB (1) | GB927869A (it) |
| NL (1) | NL247848A (it) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
-
0
- NL NL247848D patent/NL247848A/xx unknown
-
1959
- 1959-01-29 DE DEL32329A patent/DE1113990B/de active Pending
-
1960
- 1960-01-27 FR FR816829A patent/FR1246537A/fr not_active Expired
- 1960-01-29 GB GB327460A patent/GB927869A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
Also Published As
| Publication number | Publication date |
|---|---|
| GB927869A (en) | 1963-06-06 |
| NL247848A (it) | |
| FR1246537A (fr) | 1960-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1027325B (de) | Verfahren zur Herstellung von Silicium-Legierungs-Halbleiter-Anordnungen | |
| DE68918565T2 (de) | Verfahren zur herstellung von sonnenzellenkontakten. | |
| DE1200439B (de) | Verfahren zum Herstellen eines elektrischen Kontaktes an einem oxydueberzogenen Halbleiterplaettchen | |
| DE1032404B (de) | Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten | |
| DE1187326B (de) | Verfahren zur Herstellung einer Silizium-Schaltdiode | |
| DE2041497A1 (de) | Halbleiterelement und Verfahren zur Herstellung desselben | |
| DE1446161A1 (de) | Verfahren zum Herstellen eines Supraleiters mit verbesserter Supraleitfaehigkeit und unveraenderten Abmessungen | |
| DE1084381B (de) | Legierungsverfahren zur Herstellung von pn-UEbergaengen an der Oberflaeche eines Halbleiterkoerpers | |
| DE1127488B (de) | Halbleiteranordnung aus Silizium oder Germanium und Verfahren zu ihrer Herstellung | |
| DE1105067B (de) | Halbleiteranordnung aus Siliciumcarbid und Verfahren zu deren Herstellung | |
| DE1071847B (de) | Verfahren zur Herstellung einer im wesentlichen nicht gleichrichtenden flächenhaften Elektrode an dem Halbleiterkörper einer Halbleiteranordnung durch Legierung | |
| DE1097574B (de) | Verfahren zur Herstellung eines Halbleiterbauelementes | |
| DE1061447B (de) | Verfahren zur Herstellung von Halbleiteranordnungen mittels Diffusion und Legieren | |
| DE3011952C2 (de) | Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial | |
| DE1018558B (de) | Verfahren zur Herstellung von Richtleitern, Transistoren u. dgl. aus einem Halbleiter | |
| DE1521414C3 (de) | Verfahren zum Aufbringen von nebeneinander liegenden, durch einen engen Zwischenraum voneinander getrennten Metallschichten auf eine Unterlage | |
| DE1614218B2 (de) | Verfahren zum herstellen einer kontaktschicht fuer halbleiteranordnungen | |
| DE1639262A1 (de) | Halbleiterbauelement mit einer Grossflaechen-Elektrode | |
| DE1816748C3 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE3006716A1 (de) | Verfahren zum elektroplattieren | |
| DE1113990B (de) | Verfahren zum gleichzeitigen Herstellen von zwei oder mehr Legierungskontakten an der gleichen Oberflaeche eines Halbleiterkoerpers | |
| DE2141718A1 (de) | Verfahren zum Herstellen elektri scher Kontakte auf der Oberflache eines Halbleiterbauteils | |
| DE1217502B (de) | Unipolartransistor mit einer als duenne Oberflaechenschicht ausgebildeten stromfuehrenden Zone eines Leitungstyps und Verfahren zum Herstellen | |
| DE102015121633A1 (de) | Elektrolyt, Verfahren zum Ausbilden einer Kupferschicht und Verfahren zum Ausbilden eines Chips | |
| DE1639546B1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements mit pn-UEbergaengen und einem Halbleiterkoerper aus Silizium |