DE1101625B - Verfahren zum Herstellen von Selengleichrichtern - Google Patents

Verfahren zum Herstellen von Selengleichrichtern

Info

Publication number
DE1101625B
DE1101625B DEL21081A DEL0021081A DE1101625B DE 1101625 B DE1101625 B DE 1101625B DE L21081 A DEL21081 A DE L21081A DE L0021081 A DEL0021081 A DE L0021081A DE 1101625 B DE1101625 B DE 1101625B
Authority
DE
Germany
Prior art keywords
layer
halogen
selenium
cadmium
rich
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEL21081A
Other languages
German (de)
English (en)
Inventor
Dr Phil Werner Koch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL92960D priority Critical patent/NL92960C/xx
Priority to NL203974D priority patent/NL203974A/xx
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DEL21081A priority patent/DE1101625B/de
Priority to FR1152585D priority patent/FR1152585A/fr
Priority to US563747A priority patent/US2806984A/en
Priority to GB3816/56A priority patent/GB809080A/en
Publication of DE1101625B publication Critical patent/DE1101625B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/042—Preparation of foundation plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/044—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Physical Vapour Deposition (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
DEL21081A 1955-02-07 1955-02-07 Verfahren zum Herstellen von Selengleichrichtern Pending DE1101625B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL92960D NL92960C (OSRAM) 1955-02-07
NL203974D NL203974A (OSRAM) 1955-02-07
DEL21081A DE1101625B (de) 1955-02-07 1955-02-07 Verfahren zum Herstellen von Selengleichrichtern
FR1152585D FR1152585A (fr) 1955-02-07 1956-01-30 Procédé de fabrication de redresseurs au sélénium
US563747A US2806984A (en) 1955-02-07 1956-02-06 Selenium rectifiers and process for manufacturing same
GB3816/56A GB809080A (en) 1955-02-07 1956-02-07 Methods of manufacturing selenium rectifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL21081A DE1101625B (de) 1955-02-07 1955-02-07 Verfahren zum Herstellen von Selengleichrichtern

Publications (1)

Publication Number Publication Date
DE1101625B true DE1101625B (de) 1961-03-09

Family

ID=7261952

Family Applications (1)

Application Number Title Priority Date Filing Date
DEL21081A Pending DE1101625B (de) 1955-02-07 1955-02-07 Verfahren zum Herstellen von Selengleichrichtern

Country Status (5)

Country Link
US (1) US2806984A (OSRAM)
DE (1) DE1101625B (OSRAM)
FR (1) FR1152585A (OSRAM)
GB (1) GB809080A (OSRAM)
NL (2) NL92960C (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3212917A (en) * 1962-01-03 1965-10-19 Ibm Electroless plating procedure
US3439240A (en) * 1966-07-29 1969-04-15 Int Rectifier Corp Selenium rectifier
GB1435537A (en) * 1973-06-19 1976-05-12 Standard Telephones Cables Ltd Rectifier
FR2996822B1 (fr) 2012-10-12 2015-07-31 Inst Superieur De L Aeronautique Et De L Espace Drone tele-opere comportant un moyen de fixation a une surface

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE519161C (de) * 1927-12-06 1931-02-25 Ernst Presser Wechselstrom-Gleichrichter mit zwischen zwei Elektroden angeordnetem Gleichrichtermaterial
CH200171A (de) * 1937-02-08 1938-09-30 Sueddeutsche Apparate Fabrik G Selen-Metall-Gleichrichtereinheit.
CH206837A (de) * 1937-11-01 1939-08-31 Hermes Patentverwertungs Gmbh Verfahren zur Herstellung von Selengleichrichtern.
US2479301A (en) * 1947-11-29 1949-08-16 Westinghouse Electric Corp Selenium rectifier

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE742935C (de) * 1939-07-01 1943-12-15 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
US2334554A (en) * 1942-06-22 1943-11-16 Gen Electric Method of producing blocking layer devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE519161C (de) * 1927-12-06 1931-02-25 Ernst Presser Wechselstrom-Gleichrichter mit zwischen zwei Elektroden angeordnetem Gleichrichtermaterial
CH200171A (de) * 1937-02-08 1938-09-30 Sueddeutsche Apparate Fabrik G Selen-Metall-Gleichrichtereinheit.
CH206837A (de) * 1937-11-01 1939-08-31 Hermes Patentverwertungs Gmbh Verfahren zur Herstellung von Selengleichrichtern.
US2479301A (en) * 1947-11-29 1949-08-16 Westinghouse Electric Corp Selenium rectifier

Also Published As

Publication number Publication date
GB809080A (en) 1959-02-18
NL203974A (OSRAM) 1900-01-01
NL92960C (OSRAM) 1900-01-01
US2806984A (en) 1957-09-17
FR1152585A (fr) 1958-02-20

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