DE1100817B - Halbleiteranordnung mit wenigstens drei Zonen, zwei halbleitenden Zonen und einer angrenzenden Zone aus elektrisch polarisierbarem Material und deren Anwendung in Schaltungen - Google Patents

Halbleiteranordnung mit wenigstens drei Zonen, zwei halbleitenden Zonen und einer angrenzenden Zone aus elektrisch polarisierbarem Material und deren Anwendung in Schaltungen

Info

Publication number
DE1100817B
DE1100817B DEN15336A DEN0015336A DE1100817B DE 1100817 B DE1100817 B DE 1100817B DE N15336 A DEN15336 A DE N15336A DE N0015336 A DEN0015336 A DE N0015336A DE 1100817 B DE1100817 B DE 1100817B
Authority
DE
Germany
Prior art keywords
semiconductor
arrangement according
zones
semiconductor arrangement
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN15336A
Other languages
German (de)
English (en)
Inventor
Hendrik Esvelt
Johannes Gerrit Van Santen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1100817B publication Critical patent/DE1100817B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/10—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Catching Or Destruction (AREA)
  • Semiconductor Memories (AREA)
  • Light Receiving Elements (AREA)
  • Elimination Of Static Electricity (AREA)
DEN15336A 1957-07-15 1958-07-11 Halbleiteranordnung mit wenigstens drei Zonen, zwei halbleitenden Zonen und einer angrenzenden Zone aus elektrisch polarisierbarem Material und deren Anwendung in Schaltungen Pending DE1100817B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL218993 1957-07-15

Publications (1)

Publication Number Publication Date
DE1100817B true DE1100817B (de) 1961-03-02

Family

ID=19750931

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN15336A Pending DE1100817B (de) 1957-07-15 1958-07-11 Halbleiteranordnung mit wenigstens drei Zonen, zwei halbleitenden Zonen und einer angrenzenden Zone aus elektrisch polarisierbarem Material und deren Anwendung in Schaltungen

Country Status (8)

Country Link
US (1) US3015770A (enExample)
BE (1) BE569425A (enExample)
CH (1) CH373470A (enExample)
DE (1) DE1100817B (enExample)
ES (1) ES243081A1 (enExample)
FR (1) FR1212785A (enExample)
GB (1) GB897992A (enExample)
NL (2) NL107314C (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device
US3222530A (en) * 1961-06-07 1965-12-07 Philco Corp Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers
NL280435A (enExample) * 1962-07-02
US4053309A (en) * 1974-06-10 1977-10-11 Varian Associates, Inc. Electrophotographic imaging method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791759A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive device
US2791758A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive translating device
US2791761A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Electrical switching and storage
US2796564A (en) * 1953-12-21 1957-06-18 Sylvania Electric Prod Electric circuit element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2796564A (en) * 1953-12-21 1957-06-18 Sylvania Electric Prod Electric circuit element
US2791759A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive device
US2791758A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive translating device
US2791761A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Electrical switching and storage
US2791760A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive translating device

Also Published As

Publication number Publication date
US3015770A (en) 1962-01-02
FR1212785A (fr) 1960-03-25
GB897992A (en) 1962-06-06
NL218993A (enExample)
BE569425A (enExample)
CH373470A (de) 1963-11-30
ES243081A1 (es) 1959-05-01
NL107314C (enExample) 1964-02-17

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