DE1090868B - Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen - Google Patents

Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen

Info

Publication number
DE1090868B
DE1090868B DES60264A DES0060264A DE1090868B DE 1090868 B DE1090868 B DE 1090868B DE S60264 A DES60264 A DE S60264A DE S0060264 A DES0060264 A DE S0060264A DE 1090868 B DE1090868 B DE 1090868B
Authority
DE
Germany
Prior art keywords
melt
cooling
rod
temperature
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES60264A
Other languages
German (de)
English (en)
Inventor
Dipl-Ing Hans Heinrich Kocher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES60264A priority Critical patent/DE1090868B/de
Priority to FR805164A priority patent/FR1235174A/fr
Priority to CH7918459A priority patent/CH386702A/de
Priority to GB34803/59A priority patent/GB898096A/en
Publication of DE1090868B publication Critical patent/DE1090868B/de
Priority to DES73154A priority patent/DE1207636B/de
Priority to CH1454261A priority patent/CH409886A/de
Priority to NL274787D priority patent/NL274787A/xx
Priority to GB11321/62A priority patent/GB938917A/en
Priority to FR892273A priority patent/FR81564E/fr
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DES60264A 1958-10-15 1958-10-15 Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen Pending DE1090868B (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DES60264A DE1090868B (de) 1958-10-15 1958-10-15 Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen
FR805164A FR1235174A (fr) 1958-10-15 1959-09-15 Procédé de tirage de tiges semi-conductrices à partir de la matière en fusion
CH7918459A CH386702A (de) 1958-10-15 1959-10-08 Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze
GB34803/59A GB898096A (en) 1958-10-15 1959-10-14 Improvements in or relating to apparatus for and methods of drawing semi-conductor rods from the melt
DES73154A DE1207636B (de) 1958-10-15 1961-03-27 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium und/oder Germanium fuer Halbleiterbauelemente
CH1454261A CH409886A (de) 1958-10-15 1961-12-14 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium oder Germanium
NL274787D NL274787A (fr) 1958-10-15 1962-02-14
GB11321/62A GB938917A (en) 1958-10-15 1962-03-23 Method of producing discs of monocrystalline semiconductor material
FR892273A FR81564E (fr) 1958-10-15 1962-03-26 Procédé de tirage de tiges semi-conductrices à partir de la matière en fusion

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES60264A DE1090868B (de) 1958-10-15 1958-10-15 Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen
DES73154A DE1207636B (de) 1958-10-15 1961-03-27 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium und/oder Germanium fuer Halbleiterbauelemente

Publications (1)

Publication Number Publication Date
DE1090868B true DE1090868B (de) 1960-10-13

Family

ID=43127708

Family Applications (2)

Application Number Title Priority Date Filing Date
DES60264A Pending DE1090868B (de) 1958-10-15 1958-10-15 Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen
DES73154A Pending DE1207636B (de) 1958-10-15 1961-03-27 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium und/oder Germanium fuer Halbleiterbauelemente

Family Applications After (1)

Application Number Title Priority Date Filing Date
DES73154A Pending DE1207636B (de) 1958-10-15 1961-03-27 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium und/oder Germanium fuer Halbleiterbauelemente

Country Status (5)

Country Link
CH (2) CH386702A (fr)
DE (2) DE1090868B (fr)
FR (2) FR1235174A (fr)
GB (2) GB898096A (fr)
NL (1) NL274787A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4121965A (en) * 1976-07-16 1978-10-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method of controlling defect orientation in silicon crystal ribbon growth
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4239734A (en) * 1978-07-13 1980-12-16 International Business Machines Corporation Method and apparatus for forming silicon crystalline bodies
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
JPH08298251A (ja) * 1995-02-28 1996-11-12 Shin Etsu Handotai Co Ltd 薄板の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH292927A (de) * 1950-01-13 1953-08-31 Western Electric Co Verfahren und Einrichtung zur Erzeugung von Halbleiterkristallen.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH292927A (de) * 1950-01-13 1953-08-31 Western Electric Co Verfahren und Einrichtung zur Erzeugung von Halbleiterkristallen.

Also Published As

Publication number Publication date
FR1235174A (fr) 1960-10-26
GB898096A (en) 1962-06-06
DE1207636B (de) 1965-12-23
GB938917A (en) 1963-10-09
CH409886A (de) 1966-03-31
CH386702A (de) 1965-01-15
NL274787A (fr) 1964-09-25
FR81564E (fr) 1963-10-11

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