DE1071840B - Verfahren zur Herstellung von Elektroden an Halbleiterkörpern von Halbleiteranordnungen - Google Patents

Verfahren zur Herstellung von Elektroden an Halbleiterkörpern von Halbleiteranordnungen

Info

Publication number
DE1071840B
DE1071840B DE1958I0014427 DEI0014427A DE1071840B DE 1071840 B DE1071840 B DE 1071840B DE 1958I0014427 DE1958I0014427 DE 1958I0014427 DE I0014427 A DEI0014427 A DE I0014427A DE 1071840 B DE1071840 B DE 1071840B
Authority
DE
Germany
Prior art keywords
semiconductor
solution
etching
electrode
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1958I0014427
Other languages
German (de)
English (en)
Inventor
London Brian Harry Claussen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of DE1071840B publication Critical patent/DE1071840B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
    • C25C3/06—Electrolytic production, recovery or refining of metals by electrolysis of melts of aluminium
    • C25C3/08—Cell construction, e.g. bottoms, walls, cathodes
    • C25C3/12—Anodes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
DE1958I0014427 1957-02-22 1958-02-18 Verfahren zur Herstellung von Elektroden an Halbleiterkörpern von Halbleiteranordnungen Pending DE1071840B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB6044/57A GB807297A (en) 1957-02-22 1957-02-22 Improvements in or relating to the manufacture of semi-conductor devices

Publications (1)

Publication Number Publication Date
DE1071840B true DE1071840B (de) 1959-12-24

Family

ID=9807393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1958I0014427 Pending DE1071840B (de) 1957-02-22 1958-02-18 Verfahren zur Herstellung von Elektroden an Halbleiterkörpern von Halbleiteranordnungen

Country Status (4)

Country Link
US (1) US2958633A (OSRAM)
BE (1) BE565016A (OSRAM)
DE (1) DE1071840B (OSRAM)
GB (1) GB807297A (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL247276A (OSRAM) * 1959-01-12
CA734135A (en) * 1961-12-28 1966-05-10 R. Gunther-Mohr Gerard Electrical contact formation
DE1496870A1 (de) * 1964-10-01 1970-01-08 Hitachi Ltd Verfahren zur Herstellung einer Halbleiteranordnung
US3492167A (en) * 1966-08-26 1970-01-27 Matsushita Electric Industrial Co Ltd Photovoltaic cell and method of making the same
US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US827802A (en) * 1905-07-07 1906-08-07 Henry L Hollis Process of treating iron or steel objects.
US2119936A (en) * 1935-10-02 1938-06-07 Clarence B White Method of recovering pure copper from scrap and residues
US2763605A (en) * 1955-05-23 1956-09-18 Aluminum Co Of America Electrodepositing aluminum
US2854387A (en) * 1955-11-21 1958-09-30 Philco Corp Method of jet plating

Also Published As

Publication number Publication date
BE565016A (OSRAM) 1958-08-21
GB807297A (en) 1959-01-14
US2958633A (en) 1960-11-01

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