DE1062821B - Drifttransistor mit in der Basiszone abgestuftem spezifischem Widerstand - Google Patents

Drifttransistor mit in der Basiszone abgestuftem spezifischem Widerstand

Info

Publication number
DE1062821B
DE1062821B DEI14913A DEI0014913A DE1062821B DE 1062821 B DE1062821 B DE 1062821B DE I14913 A DEI14913 A DE I14913A DE I0014913 A DEI0014913 A DE I0014913A DE 1062821 B DE1062821 B DE 1062821B
Authority
DE
Germany
Prior art keywords
transistor
collector
base
emitter
specific resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DEI14913A
Other languages
German (de)
English (en)
Other versions
DE1062821C2 (cg-RX-API-DMAC7.html
Inventor
Richard Frederick Rutz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Publication of DE1062821B publication Critical patent/DE1062821B/de
Application granted granted Critical
Publication of DE1062821C2 publication Critical patent/DE1062821C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Bipolar Transistors (AREA)
DEI14913A 1957-05-31 1958-05-31 Drifttransistor mit in der Basiszone abgestuftem spezifischem Widerstand Granted DE1062821B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US662649A US2981874A (en) 1957-05-31 1957-05-31 High speed, high current transistor

Publications (2)

Publication Number Publication Date
DE1062821B true DE1062821B (de) 1959-08-06
DE1062821C2 DE1062821C2 (cg-RX-API-DMAC7.html) 1961-11-30

Family

ID=24658579

Family Applications (1)

Application Number Title Priority Date Filing Date
DEI14913A Granted DE1062821B (de) 1957-05-31 1958-05-31 Drifttransistor mit in der Basiszone abgestuftem spezifischem Widerstand

Country Status (4)

Country Link
US (1) US2981874A (cg-RX-API-DMAC7.html)
DE (1) DE1062821B (cg-RX-API-DMAC7.html)
FR (1) FR1211387A (cg-RX-API-DMAC7.html)
GB (1) GB873005A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1211336B (de) * 1960-02-12 1966-02-24 Shindengen Electric Mfg Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251532A (cg-RX-API-DMAC7.html) * 1959-06-17
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
US3362856A (en) * 1961-11-13 1968-01-09 Transitron Electronic Corp Silicon transistor device
US3319138A (en) * 1962-11-27 1967-05-09 Texas Instruments Inc Fast switching high current avalanche transistor
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3513040A (en) * 1964-03-23 1970-05-19 Xerox Corp Radiation resistant solar cell
US3449177A (en) * 1966-06-30 1969-06-10 Atomic Energy Commission Radiation detector
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor
NL113882C (cg-RX-API-DMAC7.html) * 1952-06-13
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
NL97268C (cg-RX-API-DMAC7.html) * 1955-04-22 1900-01-01

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
DE1211336B (de) * 1960-02-12 1966-02-24 Shindengen Electric Mfg Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren
US5923053A (en) * 1995-09-29 1999-07-13 Siemens Aktiengesellschaft Light-emitting diode having a curved side surface for coupling out light
US6025251A (en) * 1995-09-29 2000-02-15 Siemens Aktiengesellschaft Method for producing a plurality of semiconductor components

Also Published As

Publication number Publication date
US2981874A (en) 1961-04-25
FR1211387A (fr) 1960-03-16
GB873005A (en) 1961-07-19
DE1062821C2 (cg-RX-API-DMAC7.html) 1961-11-30

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