FR1211387A - Transistor à grande vitesse et à courant élevé - Google Patents

Transistor à grande vitesse et à courant élevé

Info

Publication number
FR1211387A
FR1211387A FR1211387DA FR1211387A FR 1211387 A FR1211387 A FR 1211387A FR 1211387D A FR1211387D A FR 1211387DA FR 1211387 A FR1211387 A FR 1211387A
Authority
FR
France
Prior art keywords
current transistor
high speed
high current
speed
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1211387A publication Critical patent/FR1211387A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
FR1211387D 1957-05-31 1958-05-27 Transistor à grande vitesse et à courant élevé Expired FR1211387A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US662649A US2981874A (en) 1957-05-31 1957-05-31 High speed, high current transistor

Publications (1)

Publication Number Publication Date
FR1211387A true FR1211387A (fr) 1960-03-16

Family

ID=24658579

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1211387D Expired FR1211387A (fr) 1957-05-31 1958-05-27 Transistor à grande vitesse et à courant élevé

Country Status (4)

Country Link
US (1) US2981874A (cg-RX-API-DMAC7.html)
DE (1) DE1062821B (cg-RX-API-DMAC7.html)
FR (1) FR1211387A (cg-RX-API-DMAC7.html)
GB (1) GB873005A (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251532A (cg-RX-API-DMAC7.html) * 1959-06-17
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
DE1211336B (de) * 1960-02-12 1966-02-24 Shindengen Electric Mfg Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
US3362856A (en) * 1961-11-13 1968-01-09 Transitron Electronic Corp Silicon transistor device
US3319138A (en) * 1962-11-27 1967-05-09 Texas Instruments Inc Fast switching high current avalanche transistor
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3513040A (en) * 1964-03-23 1970-05-19 Xerox Corp Radiation resistant solar cell
US3449177A (en) * 1966-06-30 1969-06-10 Atomic Energy Commission Radiation detector
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor
NL113882C (cg-RX-API-DMAC7.html) * 1952-06-13
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
NL97268C (cg-RX-API-DMAC7.html) * 1955-04-22 1900-01-01

Also Published As

Publication number Publication date
US2981874A (en) 1961-04-25
GB873005A (en) 1961-07-19
DE1062821C2 (cg-RX-API-DMAC7.html) 1961-11-30
DE1062821B (de) 1959-08-06

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