DE1062821B - Drifttransistor mit in der Basiszone abgestuftem spezifischem Widerstand - Google Patents
Drifttransistor mit in der Basiszone abgestuftem spezifischem WiderstandInfo
- Publication number
- DE1062821B DE1062821B DEI14913A DEI0014913A DE1062821B DE 1062821 B DE1062821 B DE 1062821B DE I14913 A DEI14913 A DE I14913A DE I0014913 A DEI0014913 A DE I0014913A DE 1062821 B DE1062821 B DE 1062821B
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- collector
- base
- emitter
- specific resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US662649A US2981874A (en) | 1957-05-31 | 1957-05-31 | High speed, high current transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1062821B true DE1062821B (de) | 1959-08-06 |
| DE1062821C2 DE1062821C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1961-11-30 |
Family
ID=24658579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEI14913A Granted DE1062821B (de) | 1957-05-31 | 1958-05-31 | Drifttransistor mit in der Basiszone abgestuftem spezifischem Widerstand |
Country Status (4)
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1211336B (de) * | 1960-02-12 | 1966-02-24 | Shindengen Electric Mfg | Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand |
| DE1292253B (de) * | 1959-09-26 | 1969-04-10 | Telefunken Patent | Halbleiteranordnung |
| DE19536438A1 (de) * | 1995-09-29 | 1997-04-03 | Siemens Ag | Halbleiterbauelement und Herstellverfahren |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL251532A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1959-06-17 | |||
| US3175934A (en) * | 1960-01-19 | 1965-03-30 | Hitachi Ltd | Semiconductor switching element and process for producing the same |
| US3362856A (en) * | 1961-11-13 | 1968-01-09 | Transitron Electronic Corp | Silicon transistor device |
| US3319138A (en) * | 1962-11-27 | 1967-05-09 | Texas Instruments Inc | Fast switching high current avalanche transistor |
| US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
| US3513040A (en) * | 1964-03-23 | 1970-05-19 | Xerox Corp | Radiation resistant solar cell |
| US3449177A (en) * | 1966-06-30 | 1969-06-10 | Atomic Energy Commission | Radiation detector |
| US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL113882C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1952-06-13 | |||
| US2793145A (en) * | 1952-06-13 | 1957-05-21 | Sylvania Electric Prod | Method of forming a junction transistor |
| US2811653A (en) * | 1953-05-22 | 1957-10-29 | Rca Corp | Semiconductor devices |
| NL97268C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1955-04-22 | 1900-01-01 |
-
1957
- 1957-05-31 US US662649A patent/US2981874A/en not_active Expired - Lifetime
-
1958
- 1958-05-27 FR FR1211387D patent/FR1211387A/fr not_active Expired
- 1958-05-30 GB GB17333/58A patent/GB873005A/en not_active Expired
- 1958-05-31 DE DEI14913A patent/DE1062821B/de active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1292253B (de) * | 1959-09-26 | 1969-04-10 | Telefunken Patent | Halbleiteranordnung |
| DE1211336B (de) * | 1960-02-12 | 1966-02-24 | Shindengen Electric Mfg | Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand |
| DE19536438A1 (de) * | 1995-09-29 | 1997-04-03 | Siemens Ag | Halbleiterbauelement und Herstellverfahren |
| US5923053A (en) * | 1995-09-29 | 1999-07-13 | Siemens Aktiengesellschaft | Light-emitting diode having a curved side surface for coupling out light |
| US6025251A (en) * | 1995-09-29 | 2000-02-15 | Siemens Aktiengesellschaft | Method for producing a plurality of semiconductor components |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1062821C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1961-11-30 |
| FR1211387A (fr) | 1960-03-16 |
| US2981874A (en) | 1961-04-25 |
| GB873005A (en) | 1961-07-19 |
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