FR1211387A - Transistor à grande vitesse et à courant élevé - Google Patents

Transistor à grande vitesse et à courant élevé

Info

Publication number
FR1211387A
FR1211387A FR1211387DA FR1211387A FR 1211387 A FR1211387 A FR 1211387A FR 1211387D A FR1211387D A FR 1211387DA FR 1211387 A FR1211387 A FR 1211387A
Authority
FR
France
Prior art keywords
current transistor
high speed
high current
speed
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1211387A publication Critical patent/FR1211387A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
FR1211387D 1957-05-31 1958-05-27 Transistor à grande vitesse et à courant élevé Expired FR1211387A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US662649A US2981874A (en) 1957-05-31 1957-05-31 High speed, high current transistor

Publications (1)

Publication Number Publication Date
FR1211387A true FR1211387A (fr) 1960-03-16

Family

ID=24658579

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1211387D Expired FR1211387A (fr) 1957-05-31 1958-05-27 Transistor à grande vitesse et à courant élevé

Country Status (4)

Country Link
US (1) US2981874A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1062821B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR1211387A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB873005A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251532A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1959-06-17
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
DE1211336B (de) * 1960-02-12 1966-02-24 Shindengen Electric Mfg Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
US3362856A (en) * 1961-11-13 1968-01-09 Transitron Electronic Corp Silicon transistor device
US3319138A (en) * 1962-11-27 1967-05-09 Texas Instruments Inc Fast switching high current avalanche transistor
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3513040A (en) * 1964-03-23 1970-05-19 Xerox Corp Radiation resistant solar cell
US3449177A (en) * 1966-06-30 1969-06-10 Atomic Energy Commission Radiation detector
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor
NL179061C (nl) * 1952-06-13 Dow Chemical Co Werkwijze ter bereiding van een schuimmassa uit copolymeren van een aromatisch monovinylideen-monomeer en een ethenisch onverzadigd carbonzuuranhydride, alsmede de hieruit vervaardigde schuimvormige voorwerpen.
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
NL97268C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1955-04-22 1900-01-01

Also Published As

Publication number Publication date
DE1062821C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1961-11-30
DE1062821B (de) 1959-08-06
GB873005A (en) 1961-07-19
US2981874A (en) 1961-04-25

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