DE1049980B - Verfahren zur Herstellung von Halbleiteranordnungen mit mindestens einer Nadelelektrode - Google Patents

Verfahren zur Herstellung von Halbleiteranordnungen mit mindestens einer Nadelelektrode

Info

Publication number
DE1049980B
DE1049980B DENDAT1049980D DE1049980DA DE1049980B DE 1049980 B DE1049980 B DE 1049980B DE NDAT1049980 D DENDAT1049980 D DE NDAT1049980D DE 1049980D A DE1049980D A DE 1049980DA DE 1049980 B DE1049980 B DE 1049980B
Authority
DE
Germany
Prior art keywords
semiconductor
needle electrode
temperature
germanium
substances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DENDAT1049980D
Other languages
German (de)
English (en)
Inventor
Paris Pierre R. R. Aigrain
Original Assignee
International Standard Electric Corporation, New York, N. Y. (V. St A.)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of DE1049980B publication Critical patent/DE1049980B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DENDAT1049980D 1952-08-07 Verfahren zur Herstellung von Halbleiteranordnungen mit mindestens einer Nadelelektrode Pending DE1049980B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1066234T 1952-08-07

Publications (1)

Publication Number Publication Date
DE1049980B true DE1049980B (de) 1959-02-05

Family

ID=9602604

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT1049980D Pending DE1049980B (de) 1952-08-07 Verfahren zur Herstellung von Halbleiteranordnungen mit mindestens einer Nadelelektrode

Country Status (4)

Country Link
US (1) US2845370A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE523523A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1049980B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR1066234A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208821B (de) * 1961-09-29 1966-01-13 Philips Nv Verfahren zum Herstellen von Spitzenelektroden fuer Halbleiterbauelemente

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE559732A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1956-10-31 1900-01-01
US3000085A (en) * 1958-06-13 1961-09-19 Westinghouse Electric Corp Plating of sintered tungsten contacts
DE3546437A1 (de) * 1985-01-31 1986-10-30 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur aenderung der lokalen, atomaren zusammensetzung von festkoerpern, insbesondere halbleitern
DE3503264A1 (de) * 1985-01-31 1986-08-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur aenderung der lokalen, atomaren zusammensetzung von festkoerpern, insbesondere halbleitern

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL70486C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1945-12-29
US2697269A (en) * 1950-07-24 1954-12-21 Bell Telephone Labor Inc Method of making semiconductor translating devices
GB688866A (en) * 1950-10-19 1953-03-18 Gen Electric Co Ltd Improvements in or relating to crystal rectifiers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208821B (de) * 1961-09-29 1966-01-13 Philips Nv Verfahren zum Herstellen von Spitzenelektroden fuer Halbleiterbauelemente

Also Published As

Publication number Publication date
BE523523A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US2845370A (en) 1958-07-29
FR1066234A (fr) 1954-06-03

Similar Documents

Publication Publication Date Title
DE1021891C2 (de) Halbleiterdiode fuer Schaltstromkreise
DE1439921B2 (de) Verstärkendes Halbleiterbauelement
DE2259829C3 (de) Verfahren zur anodischen Bildung einer Oxidschicht auf mindestens 5% Gallium enthaltenden Verbindungshalbleitern, insbesondere GaP1GaAs, AlGaP, InGaP und InGaAs in einem wässrigen Elektrolyten
DE2655341A1 (de) Halbleiteranordnung mit passivierter oberflaeche und verfahren zur herstellung dieser anordnung
DE1024640B (de) Verfahren zur Herstellung von Kristalloden
DE2142146A1 (de) Halbleiteranordnung und Verfahren zur Herstellung einer derartigen Anordnung
DE1045548B (de) Verfahren zur Herstellung eines elektrischen Halbleiterkristallgleichrichters mit negativen Widerstandseigenschaften, insbesondere zur Erzeugung von Schwingungen
DE2636961A1 (de) Verfahren zur herstellung eines halbleiterspeicherelementes
DE1489258C2 (de) Verfahren zum Herstellen des Stromkanals eines Feldeffekttransistors
DE2259682A1 (de) Verfahren zur herstellung eines elektrisch schaltbaren bistabilen widerstandselementes
DE1049980B (de) Verfahren zur Herstellung von Halbleiteranordnungen mit mindestens einer Nadelelektrode
DE1901645A1 (de) Halbleiterbauelement mit Aluminiumueberzuegen
DE1771572A1 (de) Verfahren zum Niederschlagen einer aus Niob und Zinn bestehenden kristallinen Schicht
DE605675C (de) Elektrodensystem mit unsymmetrischer Leitfaehigkeit
DE1166394B (de) Verfahren zur Herstellung von Halbleiteranordnungen mit Kadmiumchalkogenid-Halbleitern, insbesondere Photozellen
AT201114B (de) Verfahren zur Herstellung von halbleitenden Vorrichtungen
DE2013625A1 (de) Verfahren zur Vorablagerung von Fremdstoffen auf eine Halbleiteroberfläche
AT202600B (de) Feldeffekt-Transistor und Verfahren zur Herstellung eines solchen Transistors
DE851227C (de) Selengleichrichter
DE814914C (de) Kupferoxydulgleichrichter, insbesondere kleinster Eigenkapazitaet, fuer kleine Leistungen bei niedrigen Spannungen, vorzugsweise fuer hohe Frequenzen
DE892945C (de) Verfahren zur Herstellung von Selenphotoelementen
DE872097C (de) Gleichrichteranordnung
DE1282189B (de) Verfahren zum Herstellen von Tunneldioden
DE833228C (de) Verfahren zur Herstellung eines Selengleichrichters
DE891300C (de) Elektrisch unsymmetrisch leitendes System