DE1036391B - Verfahren zur Herstellung von Flaechen-Halbleiterkristalloden mit mindestens zwei verschmolzenen Halbleiterteilen von entgegengesetzten Leitfaehigkeitstyp - Google Patents

Verfahren zur Herstellung von Flaechen-Halbleiterkristalloden mit mindestens zwei verschmolzenen Halbleiterteilen von entgegengesetzten Leitfaehigkeitstyp

Info

Publication number
DE1036391B
DE1036391B DEH26523A DEH0026523A DE1036391B DE 1036391 B DE1036391 B DE 1036391B DE H26523 A DEH26523 A DE H26523A DE H0026523 A DEH0026523 A DE H0026523A DE 1036391 B DE1036391 B DE 1036391B
Authority
DE
Germany
Prior art keywords
semiconductor
supporting
semiconductor wafer
conductivity type
opposite conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEH26523A
Other languages
German (de)
English (en)
Inventor
Richard A Gudmundsen
Joseph Maserjian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of DE1036391B publication Critical patent/DE1036391B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DEH26523A 1955-04-04 1956-03-13 Verfahren zur Herstellung von Flaechen-Halbleiterkristalloden mit mindestens zwei verschmolzenen Halbleiterteilen von entgegengesetzten Leitfaehigkeitstyp Pending DE1036391B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US335366XA 1955-04-04 1955-04-04

Publications (1)

Publication Number Publication Date
DE1036391B true DE1036391B (de) 1958-08-14

Family

ID=21870972

Family Applications (1)

Application Number Title Priority Date Filing Date
DEH26523A Pending DE1036391B (de) 1955-04-04 1956-03-13 Verfahren zur Herstellung von Flaechen-Halbleiterkristalloden mit mindestens zwei verschmolzenen Halbleiterteilen von entgegengesetzten Leitfaehigkeitstyp

Country Status (5)

Country Link
BE (1) BE546546A (is")
CH (1) CH335366A (is")
DE (1) DE1036391B (is")
GB (1) GB807728A (is")
NL (2) NL99599C (is")

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1099648B (de) * 1959-08-26 1961-02-16 Siemens Ag Verfahren zum Herstellen von Halbleiteranordnungen mit mehreren Elektroden, z.B. von Transistoren
DE1132252B (de) * 1959-04-20 1962-06-28 Westinghouse Electric Corp Verfahren zum Herstellen einer Vielzahl von gleichartigen Halbleiterbauelementen aufstreifenfoermigen Halbleiterkristallen
DE1283965B (de) * 1959-05-06 1968-11-28 Texas Instruments Inc Hermetisch eingeschlossene Halbleiteranordnung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2328286A1 (fr) 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
US4236298A (en) 1979-01-25 1980-12-02 Milton Schonberger Method of trimming thermistor or other electrical components and the contacts thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132252B (de) * 1959-04-20 1962-06-28 Westinghouse Electric Corp Verfahren zum Herstellen einer Vielzahl von gleichartigen Halbleiterbauelementen aufstreifenfoermigen Halbleiterkristallen
DE1283965B (de) * 1959-05-06 1968-11-28 Texas Instruments Inc Hermetisch eingeschlossene Halbleiteranordnung
DE1099648B (de) * 1959-08-26 1961-02-16 Siemens Ag Verfahren zum Herstellen von Halbleiteranordnungen mit mehreren Elektroden, z.B. von Transistoren

Also Published As

Publication number Publication date
NL99599C (is") 1900-01-01
CH335366A (fr) 1958-12-31
NL203694A (is") 1900-01-01
GB807728A (en) 1959-01-21
BE546546A (is") 1900-01-01

Similar Documents

Publication Publication Date Title
DE1764281C3 (de) Verfahren zum Herstellen einer Halbleitervorrichtung
DE2142146C3 (de) Verfahren zum gleichzeitigen Herstellen mehrerer Halbleiterbauelemente
DE68921559T2 (de) Verfahren zur Herstellung einer vom Substrat elektrisch isolierten Halbleiterschicht.
DE1614283B2 (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE1056747B (de) Verfahren zur Herstellung von mehreren p-n-UEbergaengen in Halbleiterkoerpern fuer Transistoren durch Diffusion
DE1764155C3 (de) Verfahren zum Herstellen eines Halbleiterbauelementes aus einem Siliciumkörper
DE1266406B (de) Verfahren zum Herstellen mechanisch halternder und elektrisch leitender Anschluesse an kleinen Plaettchen, insbesondere an Halbleiterplaettchen
DE1151323B (de) Halbleiterbauelement mit einem scheibenfoermigen Halbleiterkoerper mit mindestens einer plateauartigen Erhoehung und Verfahren zu seiner Herstellung
DE1764378C3 (de) Integrierte Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung
DE2340142C3 (de) Verfahren zur Massenproduktion von Halbleiteranordnungen mit hoher Durchbruchspannung
DE1052572B (de) Elektrodensystem, das einen halbleitenden Einkristall mit wenigstens zwei Teilen verschiedener Leitungsart enthaelt, z. B. Kristalldiode oder Transistor
DE1178518C2 (de) Verfahren zur Herstellung von Halbleiter-bauelementen
DE2108850C2 (de) Verfahren zur Befestigung von Zuleitungen an Halbleiterplättchen
DE1036391B (de) Verfahren zur Herstellung von Flaechen-Halbleiterkristalloden mit mindestens zwei verschmolzenen Halbleiterteilen von entgegengesetzten Leitfaehigkeitstyp
DE2930460C2 (de) Verfahren zum Herstellen hochspannungsfester Mesadioden
DE1300165B (de) Mikrominiaturisierte Halbleiterdiodenanordnung
DE2608813C3 (de) Niedrigsperrende Zenerdiode
DE1800608A1 (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE1029936B (de) Legierungs-Verfahren zum Herstellen von p-n-Schichten
DE1564444C3 (de) Halbleiteranordnung mit einem isolierenden Träger
DE1061907B (de) Verfahren zur Herstellung von Flaechen-Halbleiterkristalloden mit mindestens zwei verschmolzenen Halbleiterteilen vom entgegengesetzten Leitfaehigkeitstyp
DE1289187B (de) Verfahren zum Herstellen einer mikroelektronischen Schaltungsanordnung
DE102023209224B3 (de) Verfahren zum Herstellen eines Bauteils
DE1285625C2 (de) Verfahren zur herstellung eines halbleiterbauelements
DE1093019C2 (de) Verfahren zur herstellung von halbleiteranordnungen