DE1035776B - Transistor mit einem flachen Halbleiterkoerper und mehreren sperrfreien und sperrenden Elektroden - Google Patents
Transistor mit einem flachen Halbleiterkoerper und mehreren sperrfreien und sperrenden ElektrodenInfo
- Publication number
- DE1035776B DE1035776B DEI10681A DEI0010681A DE1035776B DE 1035776 B DE1035776 B DE 1035776B DE I10681 A DEI10681 A DE I10681A DE I0010681 A DEI0010681 A DE I0010681A DE 1035776 B DE1035776 B DE 1035776B
- Authority
- DE
- Germany
- Prior art keywords
- collector
- transistor
- electrodes
- current
- transistor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/29—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator multistable
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US458619A US2889499A (en) | 1954-09-27 | 1954-09-27 | Bistable semiconductor device |
| US509852A US2992337A (en) | 1955-05-20 | 1955-05-20 | Multiple collector transistors and circuits therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1035776B true DE1035776B (de) | 1958-08-07 |
Family
ID=27039067
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEI10681A Pending DE1035776B (de) | 1954-09-27 | 1955-09-21 | Transistor mit einem flachen Halbleiterkoerper und mehreren sperrfreien und sperrenden Elektroden |
| DEI15160A Pending DE1076175B (de) | 1954-09-27 | 1956-05-05 | Bistabiler Schalter mit einem Transistor, der einen flachen Koerper aus halbleitendem Material mit einer oder mehreren sperr-freien und sperrenden Elektroden aufweist |
| DEI11649A Pending DE1055692B (de) | 1954-09-27 | 1956-05-05 | Transistor mit einem flachen Koerper aus halbleitendem Material mit mehreren sperrfreien und sperrenden Elektroden |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEI15160A Pending DE1076175B (de) | 1954-09-27 | 1956-05-05 | Bistabiler Schalter mit einem Transistor, der einen flachen Koerper aus halbleitendem Material mit einer oder mehreren sperr-freien und sperrenden Elektroden aufweist |
| DEI11649A Pending DE1055692B (de) | 1954-09-27 | 1956-05-05 | Transistor mit einem flachen Koerper aus halbleitendem Material mit mehreren sperrfreien und sperrenden Elektroden |
Country Status (5)
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1099646B (de) * | 1958-08-29 | 1961-02-16 | Joachim Immanuel Franke | Unipolarer Transistor mit einem plattenfoermigen Halbleiterkoerper und mindestens drei einander umschliessenden Elektroden auf dessen einer Oberflaeche und Verfahren zu seiner Herstellung |
| DE1131329B (de) * | 1959-02-24 | 1962-06-14 | Westinghouse Electric Corp | Steuerbares Halbleiterbauelement |
| DE1161356B (de) * | 1960-06-03 | 1964-01-16 | Rudolf Rost Dr Ing | Schaltender und schwingender Unipolartransistor und Oszillatorschaltung mit einem solchen Transistor |
| DE1182354B (de) * | 1958-09-02 | 1964-11-26 | Texas Instruments Inc | Transistor |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3002100A (en) * | 1954-09-27 | 1961-09-26 | Ibm | Transistor circuit element |
| DE1292253B (de) * | 1959-09-26 | 1969-04-10 | Telefunken Patent | Halbleiteranordnung |
| DE1156508B (de) * | 1959-09-30 | 1963-10-31 | Siemens Ag | Steuerbares und schaltendes Vierschichthalbleiterbauelement |
| NL261720A (US20020095090A1-20020718-M00002.png) * | 1960-03-04 | |||
| DE1196794C2 (de) * | 1960-03-26 | 1966-04-07 | Telefunken Patent | Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen |
| CN112305407B (zh) * | 2020-10-21 | 2024-06-11 | 上海华力集成电路制造有限公司 | 定位测试结构失效位置和原因的方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE890847C (de) * | 1948-09-24 | 1953-09-24 | Western Electric Co | Halbleiter-UEbertragungsvorrichtung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE519804A (US20020095090A1-20020718-M00002.png) * | 1952-05-09 |
-
0
- BE BE541575D patent/BE541575A/xx unknown
-
1955
- 1955-09-20 FR FR1152077D patent/FR1152077A/fr not_active Expired
- 1955-09-21 DE DEI10681A patent/DE1035776B/de active Pending
- 1955-09-26 CH CH339292D patent/CH339292A/fr unknown
-
1956
- 1956-05-05 DE DEI15160A patent/DE1076175B/de active Pending
- 1956-05-05 DE DEI11649A patent/DE1055692B/de active Pending
- 1956-05-18 FR FR1167594D patent/FR1167594A/fr not_active Expired
- 1956-05-22 GB GB15731/56A patent/GB831535A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE890847C (de) * | 1948-09-24 | 1953-09-24 | Western Electric Co | Halbleiter-UEbertragungsvorrichtung |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1099646B (de) * | 1958-08-29 | 1961-02-16 | Joachim Immanuel Franke | Unipolarer Transistor mit einem plattenfoermigen Halbleiterkoerper und mindestens drei einander umschliessenden Elektroden auf dessen einer Oberflaeche und Verfahren zu seiner Herstellung |
| DE1182354B (de) * | 1958-09-02 | 1964-11-26 | Texas Instruments Inc | Transistor |
| DE1131329B (de) * | 1959-02-24 | 1962-06-14 | Westinghouse Electric Corp | Steuerbares Halbleiterbauelement |
| DE1161356B (de) * | 1960-06-03 | 1964-01-16 | Rudolf Rost Dr Ing | Schaltender und schwingender Unipolartransistor und Oszillatorschaltung mit einem solchen Transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1076175B (de) | 1960-02-25 |
| FR1152077A (fr) | 1958-02-11 |
| GB831535A (en) | 1960-03-30 |
| BE541575A (US20020095090A1-20020718-M00002.png) | |
| DE1055692B (de) | 1959-04-23 |
| FR1167594A (fr) | 1958-11-26 |
| CH339292A (fr) | 1959-06-30 |
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