GB831535A - Improvements in semi conductor switching devices and circuits therefor - Google Patents

Improvements in semi conductor switching devices and circuits therefor

Info

Publication number
GB831535A
GB831535A GB15731/56A GB1573156A GB831535A GB 831535 A GB831535 A GB 831535A GB 15731/56 A GB15731/56 A GB 15731/56A GB 1573156 A GB1573156 A GB 1573156A GB 831535 A GB831535 A GB 831535A
Authority
GB
United Kingdom
Prior art keywords
electrode
region
electrodes
arrangement
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15731/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US458619A external-priority patent/US2889499A/en
Priority claimed from US509852A external-priority patent/US2992337A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB831535A publication Critical patent/GB831535A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/29—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator multistable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

831,535. Transistors. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 22, 1956 [May 20, 1955], No. 15731/56. Class 37. [Also in Group XL (c)] A semi-conductor switching device comprises a body having a first region 2 of one conductivity type of thickness less than a diffusion length, adjoining a second thin region 3 of opposite conductivity type of lower resistivity than the first region, two spaced controlled electrodes 5 and 6 in contact with the first region and a control electrode 11 in contact with the second region, the arrangement being such that a potential gradient exists along at least one of the regions to control the respective rates of carrier injection across the PN junction at portions opposite the controlled electrodes. The controlled electrodes 5 and 6 may consist of point contacts or hook collectors, and are spaced at a distance greater than the diffusion length. Three ohmic electrodes 8, 9 and 10 may be applied to region 2 as in Fig. 2 which shows a switching circuit having one stable state (electrodes 5 and 6 both non- conducting), a second state with an output from collector 5 while a positive pulse is applied to electrode 10, and a third state with output from collector 6 while a negative pulse is applied to electrode 10. Normally batteries 18 and 23 reverse bias the whole of the PN junction, and no current flows through either of electrodes 5 and 6. The application of a positive potential to electrode 10 causes a potential gradient along N region 2 to forward bias the left half of the PN junction so that zone 3 acts as an emitter to collector electrode 5 while the right half of the PN junction is reverse biased preventing emitter action so that no current flows through electrode 6. A negative potential to electrode 10 similarly causes electrode 6 to conduct but not electrode 5. Electrode 11 maintains region 3 at uniform potential and holes are supplied by means of a connection to electrode 8 via resistor 26 which limits the cumulative action which takes place during operation. A modification is described in which electrode 9 is associated with a second input signal source, both inputs being applied through inductive coupling, to provide a trigger or a latch circuit. Electrode 8 may also be replaced by a point contact emitter source to supply zone 3 which is otherwise left floating. Fig. 5 (not shown) describes a modified two stable state arrangement in which earthed electrode 8 is shifted so that the arrangement is non- symmetrical and under no-signal conditions electrode 5 is conducting while electrode 6 is cut off. An alternative non-symmetrical arrangement is described (Fig. 5A) in which region 3 and electrode 11 are inclined with respect to the upper surface of region 2. Fig. 11 shows the device arranged as an amplifier for square-wave signals in which only one base electrode (43a) is used and the P zone 44 is floating; in this circuit, when the input signal to electrode 46 ceases this electrode becomes reverse biased to act as a collector to reduce hole storage effects and sharpen the output pulse. By connecting a resonant circuit between electrode 46 and 47 this circuit may be used as an oscillator the electrodes 46 and 47 operating alternately as emitter and then collector. In Fig. 14, the P region 118 which is of higher resistivity than before, is also provided with ohmic electrodes 64 and 65 so that a potential. gradient may also be provided along this region. The arrangement provides a trigger circuit in which under no signal conditions the left-hand side of the PN junction is reverse biased and the righthand side forward biased, so that electrode 121 and not electrode 120 conducts. A positive signal to electrodes 63 and 64 via terminal 67 reverses the position, which restores on cessation of the pulse or on the application of a negative pulse. This arrangement may also be converted into an oscillator by providing a resonant circuit between, electrodes 120 and 121.
GB15731/56A 1954-09-27 1956-05-22 Improvements in semi conductor switching devices and circuits therefor Expired GB831535A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US458619A US2889499A (en) 1954-09-27 1954-09-27 Bistable semiconductor device
US509852A US2992337A (en) 1955-05-20 1955-05-20 Multiple collector transistors and circuits therefor

Publications (1)

Publication Number Publication Date
GB831535A true GB831535A (en) 1960-03-30

Family

ID=27039067

Family Applications (1)

Application Number Title Priority Date Filing Date
GB15731/56A Expired GB831535A (en) 1954-09-27 1956-05-22 Improvements in semi conductor switching devices and circuits therefor

Country Status (5)

Country Link
BE (1) BE541575A (en)
CH (1) CH339292A (en)
DE (3) DE1035776B (en)
FR (2) FR1152077A (en)
GB (1) GB831535A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002100A (en) * 1954-09-27 1961-09-26 Ibm Transistor circuit element
FR1210880A (en) * 1958-08-29 1960-03-11 Improvements to field-effect transistors
NL121500C (en) * 1958-09-02
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
DE1292253B (en) * 1959-09-26 1969-04-10 Telefunken Patent Semiconductor device
DE1156508B (en) * 1959-09-30 1963-10-31 Siemens Ag Controllable and switching four-layer semiconductor component
NL261720A (en) * 1960-03-04
DE1196794C2 (en) * 1960-03-26 1966-04-07 Telefunken Patent Semiconductor component with a disk-shaped semiconductor body, in particular transistor, and method for manufacturing
DE1161356B (en) * 1960-06-03 1964-01-16 Rudolf Rost Dr Ing Switching and oscillating unipolar transistor and oscillator circuit with such a transistor
CN112305407B (en) * 2020-10-21 2024-06-11 上海华力集成电路制造有限公司 Method for locating failure position and reason of test structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL79529C (en) * 1948-09-24
BE519804A (en) * 1952-05-09

Also Published As

Publication number Publication date
DE1035776B (en) 1958-08-07
DE1076175B (en) 1960-02-25
BE541575A (en)
FR1152077A (en) 1958-02-11
FR1167594A (en) 1958-11-26
CH339292A (en) 1959-06-30
DE1055692B (en) 1959-04-23

Similar Documents

Publication Publication Date Title
US2622212A (en) Bistable circuit
US2502488A (en) Semiconductor amplifier
US2764642A (en) Semiconductor signal translating devices
US2676271A (en) Transistor gate
GB748414A (en) Semiconductor signal translating elements and devices utilizing them
GB831535A (en) Improvements in semi conductor switching devices and circuits therefor
GB1198132A (en) Improvements in Semiconductor Bistable Switching Devices
US3179817A (en) Diode bridge gating circuit with opposite conductivity type transistors for control
GB1012691A (en) Electrical circuits for logic functions
US2832898A (en) Time delay transistor trigger circuit
GB753514A (en) Semiconductor signal translating devices and circuits
US3215851A (en) Emitter follower with nonsaturating driver
USRE27110E (en) Transistor elemekt and transistor circuit
US2793303A (en) Pulse sharpening circuits
GB889314A (en) Improvements in or relating to electric gating circuits
US2870345A (en) Amplification control of a transistor
US2958022A (en) Asymmetrically conductive device
US3237018A (en) Integrated semiconductor switch
GB1305730A (en)
US2992337A (en) Multiple collector transistors and circuits therefor
US2872594A (en) Large signal transistor circuits having short "fall" time
US2923836A (en) Bistable transistor circuit
US2776381A (en) Multielectrode semiconductor circuit element
US2953695A (en) Gating circuits
GB742134A (en) Control circuit including a semiconducting body