DE1292253B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
DE1292253B
DE1292253B DET17264A DET0017264A DE1292253B DE 1292253 B DE1292253 B DE 1292253B DE T17264 A DET17264 A DE T17264A DE T0017264 A DET0017264 A DE T0017264A DE 1292253 B DE1292253 B DE 1292253B
Authority
DE
Germany
Prior art keywords
semiconductor body
junction
blocking electrode
barrier layer
surface side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DET17264A
Other languages
German (de)
Inventor
Bendig Hans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Priority to DET17264A priority Critical patent/DE1292253B/en
Publication of DE1292253B publication Critical patent/DE1292253B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier

Description

Hierzu 1 Blatt Zeichnungen1 sheet of drawings

Claims (1)

Patentanspruch:Claim: Halbleiteranordnung mit einem pn-übergang, bei der der Halbleiterkörper zur Erhöhung der Spannungsabhängigkeit der Sperrschichtkapazität im Bereich der Raumladungszone des Überganges eine solche Querschnittsänderung aufweist, daß sich beim spannungsabhängigen Verschieben der Sperrschicht eine Änderung der Sperrschichtfläche ergibt, dadurch gekennzeichnet, daß eine sperrende Elektrode auf der einen Oberflächenseite und eine nichtsperrenden Elektrode auf der gegenüberliegenden Oberflächenseite des Halbleiterkörpers angeordnet ist und daß eine keilförmige Nut mit ihrem sich verjüngenden Teil zur sperrenden Elektrode weisend in den Halbleiterkörper eingebracht ist.Semiconductor arrangement with a pn junction, in which the semiconductor body is used to increase the Voltage dependence of the junction capacitance in the area of the space charge zone of the junction has such a change in cross-section that the stress-dependent displacement the barrier layer results in a change in the barrier layer area, characterized in that that a blocking electrode on one surface side and a non-blocking electrode Electrode arranged on the opposite surface side of the semiconductor body and that a wedge-shaped groove with its tapering part to the blocking electrode is introduced pointing into the semiconductor body.
DET17264A 1959-09-26 1959-09-26 Semiconductor device Pending DE1292253B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DET17264A DE1292253B (en) 1959-09-26 1959-09-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET17264A DE1292253B (en) 1959-09-26 1959-09-26 Semiconductor device

Publications (1)

Publication Number Publication Date
DE1292253B true DE1292253B (en) 1969-04-10

Family

ID=7548534

Family Applications (1)

Application Number Title Priority Date Filing Date
DET17264A Pending DE1292253B (en) 1959-09-26 1959-09-26 Semiconductor device

Country Status (1)

Country Link
DE (1) DE1292253B (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1635713U (en) * 1950-09-12 1952-03-13 Siemens Ag SEMI-CONDUCTORS FOR DIODES OR CRYSTAL AMPLIFIERS.
AT180958B (en) * 1951-02-16 1955-02-10 Western Electric Co Electric circuit with a semiconductor element
DE966492C (en) * 1948-02-26 1957-08-14 Western Electric Co Electrically controllable switching element made of semiconductor material
US2843809A (en) * 1954-05-11 1958-07-15 Corvey Engineering Company Transistors
DE1039649B (en) * 1956-02-13 1958-09-25 Siemens Ag Thread semiconductor arrangement with two non-blocking base electrodes of different potential and at least one blocking electrode serving as an emitter
FR1173400A (en) * 1956-05-18 1959-02-24 Philco Corp Semiconductor device
DE1055692B (en) * 1954-09-27 1959-04-23 Ibm Deutschland Transistor with a flat body made of semiconducting material with several non-blocking and blocking electrodes
FR1185824A (en) * 1957-11-06 1959-08-06 Enhancements to Electrically Pinched Solid State Amplifier Devices
DE1062821B (en) * 1957-05-31 1959-08-06 Ibm Deutschland Drift transistor with graduated specific resistance in the base zone
DE1075745C2 (en) * 1958-07-02 1966-03-24 Siemens Ag Semiconductor arrangement with a pn junction for use as a voltage-dependent capacitance

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966492C (en) * 1948-02-26 1957-08-14 Western Electric Co Electrically controllable switching element made of semiconductor material
DE1635713U (en) * 1950-09-12 1952-03-13 Siemens Ag SEMI-CONDUCTORS FOR DIODES OR CRYSTAL AMPLIFIERS.
AT180958B (en) * 1951-02-16 1955-02-10 Western Electric Co Electric circuit with a semiconductor element
US2843809A (en) * 1954-05-11 1958-07-15 Corvey Engineering Company Transistors
DE1055692B (en) * 1954-09-27 1959-04-23 Ibm Deutschland Transistor with a flat body made of semiconducting material with several non-blocking and blocking electrodes
DE1039649B (en) * 1956-02-13 1958-09-25 Siemens Ag Thread semiconductor arrangement with two non-blocking base electrodes of different potential and at least one blocking electrode serving as an emitter
FR1173400A (en) * 1956-05-18 1959-02-24 Philco Corp Semiconductor device
DE1062821B (en) * 1957-05-31 1959-08-06 Ibm Deutschland Drift transistor with graduated specific resistance in the base zone
FR1185824A (en) * 1957-11-06 1959-08-06 Enhancements to Electrically Pinched Solid State Amplifier Devices
DE1075745C2 (en) * 1958-07-02 1966-03-24 Siemens Ag Semiconductor arrangement with a pn junction for use as a voltage-dependent capacitance

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