DE1035776B - Transistor mit einem flachen Halbleiterkoerper und mehreren sperrfreien und sperrenden Elektroden - Google Patents

Transistor mit einem flachen Halbleiterkoerper und mehreren sperrfreien und sperrenden Elektroden

Info

Publication number
DE1035776B
DE1035776B DEI10681A DEI0010681A DE1035776B DE 1035776 B DE1035776 B DE 1035776B DE I10681 A DEI10681 A DE I10681A DE I0010681 A DEI0010681 A DE I0010681A DE 1035776 B DE1035776 B DE 1035776B
Authority
DE
Germany
Prior art keywords
collector
transistor
electrodes
current
transistor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEI10681A
Other languages
German (de)
English (en)
Inventor
Richard Frederick Rutz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US458619A external-priority patent/US2889499A/en
Priority claimed from US509852A external-priority patent/US2992337A/en
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Publication of DE1035776B publication Critical patent/DE1035776B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/29—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator multistable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DEI10681A 1954-09-27 1955-09-21 Transistor mit einem flachen Halbleiterkoerper und mehreren sperrfreien und sperrenden Elektroden Pending DE1035776B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US458619A US2889499A (en) 1954-09-27 1954-09-27 Bistable semiconductor device
US509852A US2992337A (en) 1955-05-20 1955-05-20 Multiple collector transistors and circuits therefor

Publications (1)

Publication Number Publication Date
DE1035776B true DE1035776B (de) 1958-08-07

Family

ID=27039067

Family Applications (3)

Application Number Title Priority Date Filing Date
DEI10681A Pending DE1035776B (de) 1954-09-27 1955-09-21 Transistor mit einem flachen Halbleiterkoerper und mehreren sperrfreien und sperrenden Elektroden
DEI15160A Pending DE1076175B (de) 1954-09-27 1956-05-05 Bistabiler Schalter mit einem Transistor, der einen flachen Koerper aus halbleitendem Material mit einer oder mehreren sperr-freien und sperrenden Elektroden aufweist
DEI11649A Pending DE1055692B (de) 1954-09-27 1956-05-05 Transistor mit einem flachen Koerper aus halbleitendem Material mit mehreren sperrfreien und sperrenden Elektroden

Family Applications After (2)

Application Number Title Priority Date Filing Date
DEI15160A Pending DE1076175B (de) 1954-09-27 1956-05-05 Bistabiler Schalter mit einem Transistor, der einen flachen Koerper aus halbleitendem Material mit einer oder mehreren sperr-freien und sperrenden Elektroden aufweist
DEI11649A Pending DE1055692B (de) 1954-09-27 1956-05-05 Transistor mit einem flachen Koerper aus halbleitendem Material mit mehreren sperrfreien und sperrenden Elektroden

Country Status (5)

Country Link
BE (1) BE541575A (OSRAM)
CH (1) CH339292A (OSRAM)
DE (3) DE1035776B (OSRAM)
FR (2) FR1152077A (OSRAM)
GB (1) GB831535A (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1099646B (de) * 1958-08-29 1961-02-16 Joachim Immanuel Franke Unipolarer Transistor mit einem plattenfoermigen Halbleiterkoerper und mindestens drei einander umschliessenden Elektroden auf dessen einer Oberflaeche und Verfahren zu seiner Herstellung
DE1131329B (de) * 1959-02-24 1962-06-14 Westinghouse Electric Corp Steuerbares Halbleiterbauelement
DE1161356B (de) * 1960-06-03 1964-01-16 Rudolf Rost Dr Ing Schaltender und schwingender Unipolartransistor und Oszillatorschaltung mit einem solchen Transistor
DE1182354B (de) * 1958-09-02 1964-11-26 Texas Instruments Inc Transistor
DE1299036B (de) * 1955-05-25 1969-07-10 Ibm Deutschland Transistorisierte Impulstreiberschaltung fuer Magnetkernspeicher

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002100A (en) * 1954-09-27 1961-09-26 Ibm Transistor circuit element
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
DE1156508B (de) * 1959-09-30 1963-10-31 Siemens Ag Steuerbares und schaltendes Vierschichthalbleiterbauelement
NL261720A (OSRAM) * 1960-03-04
DE1196794C2 (de) * 1960-03-26 1966-04-07 Telefunken Patent Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen
CN112305407B (zh) * 2020-10-21 2024-06-11 上海华力集成电路制造有限公司 定位测试结构失效位置和原因的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE890847C (de) * 1948-09-24 1953-09-24 Western Electric Co Halbleiter-UEbertragungsvorrichtung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE519804A (OSRAM) * 1952-05-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE890847C (de) * 1948-09-24 1953-09-24 Western Electric Co Halbleiter-UEbertragungsvorrichtung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1299036B (de) * 1955-05-25 1969-07-10 Ibm Deutschland Transistorisierte Impulstreiberschaltung fuer Magnetkernspeicher
DE1099646B (de) * 1958-08-29 1961-02-16 Joachim Immanuel Franke Unipolarer Transistor mit einem plattenfoermigen Halbleiterkoerper und mindestens drei einander umschliessenden Elektroden auf dessen einer Oberflaeche und Verfahren zu seiner Herstellung
DE1182354B (de) * 1958-09-02 1964-11-26 Texas Instruments Inc Transistor
DE1131329B (de) * 1959-02-24 1962-06-14 Westinghouse Electric Corp Steuerbares Halbleiterbauelement
DE1161356B (de) * 1960-06-03 1964-01-16 Rudolf Rost Dr Ing Schaltender und schwingender Unipolartransistor und Oszillatorschaltung mit einem solchen Transistor

Also Published As

Publication number Publication date
FR1152077A (fr) 1958-02-11
DE1055692B (de) 1959-04-23
FR1167594A (fr) 1958-11-26
BE541575A (OSRAM)
DE1076175B (de) 1960-02-25
CH339292A (fr) 1959-06-30
GB831535A (en) 1960-03-30

Similar Documents

Publication Publication Date Title
DE3407975C2 (de) Normalerweise ausgeschaltete, Gate-gesteuerte, elektrische Schaltungsanordnung mit kleinem Einschaltwiderstand
DE1152763C2 (de) Halbleiterbauelement mit mindestens einem PN-UEbergang
DE1154872B (de) Halbleiterbauelement mit einem mindestens drei pn-UEbergaenge aufweisenden Halbleiterkoerper
DE1279196B (de) Flaechentransistor
DE1024119B (de) Bistabile Gedaechtniseinrichtung mit einem halbleitenden Koerper
DE1054586B (de) Transistor mit temperaturkompensiertem Kollektorstrom
DE3024015A1 (de) Steuerbarer halbleiterschalter
DE3628857A1 (de) Halbleitereinrichtung
DE2211384A1 (de) Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung
DE1614844B2 (de) Bistabile, durch impulse steuerbare halbleitervorrichtung
DE1589707B2 (de) Temperaturkompensierte Z Diodenanord nung
DE1295699B (de) Schaltbares Halbleiterbauelement
DE2558489C3 (OSRAM)
DE1058554B (de) Bistabiler Multivibrator
DE1021965B (de) Bistabiler Transistor-Roehre-Kippkreis
DE2519056C2 (OSRAM)
DE2640621B2 (de) Halbleiter-Schalteinrichtung
DE1076175B (de) Bistabiler Schalter mit einem Transistor, der einen flachen Koerper aus halbleitendem Material mit einer oder mehreren sperr-freien und sperrenden Elektroden aufweist
DE2643935C2 (de) Halbleiter-Schalteinrichtung
DE2417248A1 (de) Elektronische festkoerper-steuervorrichtung und schaltung fuer diese
DD141595A5 (de) Mit gesaettigten transistoren arbeitende schaltung
DE1063279B (de) Halbleiteranordnung aus einem Halbleiterkoerper mit flaechenhaftem innerem pn-UEbergang und mit mehr als drei Elektroden
AT201113B (de) Transistor
DE3104743C2 (de) Halbleiter-Schaltanordnung
DE2953403C2 (de) Hochleistungs-Schalter unter Verwendung eines torgesteuerten Diodenschalters