DE10328327B4 - Strahlungsdetektor für Bildgebungsarrays - Google Patents

Strahlungsdetektor für Bildgebungsarrays Download PDF

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Publication number
DE10328327B4
DE10328327B4 DE10328327A DE10328327A DE10328327B4 DE 10328327 B4 DE10328327 B4 DE 10328327B4 DE 10328327 A DE10328327 A DE 10328327A DE 10328327 A DE10328327 A DE 10328327A DE 10328327 B4 DE10328327 B4 DE 10328327B4
Authority
DE
Germany
Prior art keywords
data line
thin film
film transistor
dielectric layer
radiation detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE10328327A
Other languages
German (de)
English (en)
Other versions
DE10328327A1 (de
Inventor
William Andrew Hennessy
Douglas Albagli
Ji Ung Lee
Ching-Yeu Wei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE10328327A1 publication Critical patent/DE10328327A1/de
Application granted granted Critical
Publication of DE10328327B4 publication Critical patent/DE10328327B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
DE10328327A 2002-06-25 2003-06-24 Strahlungsdetektor für Bildgebungsarrays Expired - Lifetime DE10328327B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/183904 2002-06-25
US10/183,904 US6784434B2 (en) 2002-06-25 2002-06-25 Imaging array and method for manufacturing same

Publications (2)

Publication Number Publication Date
DE10328327A1 DE10328327A1 (de) 2004-03-18
DE10328327B4 true DE10328327B4 (de) 2012-07-12

Family

ID=29735217

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10328327A Expired - Lifetime DE10328327B4 (de) 2002-06-25 2003-06-24 Strahlungsdetektor für Bildgebungsarrays

Country Status (3)

Country Link
US (1) US6784434B2 (https=)
JP (1) JP2004048000A (https=)
DE (1) DE10328327B4 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100683526B1 (ko) * 2000-12-29 2007-02-15 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
KR100730066B1 (ko) * 2000-12-29 2007-06-20 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그 제조방법
US7081628B2 (en) * 2003-11-10 2006-07-25 Ge Medical Systems Global Technology Company, Llc Spatially patterned light-blocking layers for radiation imaging detectors
KR100626009B1 (ko) * 2004-06-30 2006-09-20 삼성에스디아이 주식회사 박막 트랜지스터 구조체 및 이를 구비하는 평판디스플레이 장치
WO2007136372A1 (en) * 2006-05-22 2007-11-29 Thomson Licensing Video system having a touch screen
JP5286691B2 (ja) * 2007-05-14 2013-09-11 三菱電機株式会社 フォトセンサー
US7687790B2 (en) * 2007-06-07 2010-03-30 General Electric Company EMI shielding of digital x-ray detectors with non-metallic enclosures
US9935152B2 (en) * 2012-12-27 2018-04-03 General Electric Company X-ray detector having improved noise performance
US9917133B2 (en) 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
WO2015138329A1 (en) 2014-03-13 2015-09-17 General Electric Company Curved digital x-ray detector for weld inspection

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0964451A2 (en) * 1998-06-02 1999-12-15 Canon Kabushiki Kaisha Photosensor and radiation detection system
US20010022363A1 (en) * 2000-03-07 2001-09-20 Hisashi Nagata Image sensor and method of manufacturing the same
US6297862B1 (en) * 1996-10-16 2001-10-02 Seiko Epson Corporation Light shielding structure of a substrate for a liquid crystal device, liquid crystal device and projection type display device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198673A (en) * 1992-01-23 1993-03-30 General Electric Company Radiation image detector with optical gain selenium photosensors
US5399884A (en) * 1993-11-10 1995-03-21 General Electric Company Radiation imager with single passivation dielectric for transistor and diode
US5435608A (en) * 1994-06-17 1995-07-25 General Electric Company Radiation imager with common passivation dielectric for gate electrode and photosensor
US5838054A (en) * 1996-12-23 1998-11-17 General Electric Company Contact pads for radiation imagers
KR100443902B1 (ko) * 1999-03-25 2004-08-09 엘지.필립스 엘시디 주식회사 엑스레이 영상 감지소자 및 그 제조방법
KR100630880B1 (ko) * 1999-12-31 2006-10-02 엘지.필립스 엘시디 주식회사 엑스레이 영상 감지소자 및 그 제조방법
KR100763137B1 (ko) * 2000-12-29 2007-10-02 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
US6847039B2 (en) * 2001-03-28 2005-01-25 Canon Kabushiki Kaisha Photodetecting device, radiation detecting device, and radiation imaging system
KR100396162B1 (ko) * 2001-11-01 2003-08-27 엘지.필립스 엘시디 주식회사 엑스-선 감지장치의 구동방법 및 장치
US6777685B2 (en) * 2002-04-03 2004-08-17 General Electric Company Imaging array and methods for fabricating same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297862B1 (en) * 1996-10-16 2001-10-02 Seiko Epson Corporation Light shielding structure of a substrate for a liquid crystal device, liquid crystal device and projection type display device
EP0964451A2 (en) * 1998-06-02 1999-12-15 Canon Kabushiki Kaisha Photosensor and radiation detection system
US20010022363A1 (en) * 2000-03-07 2001-09-20 Hisashi Nagata Image sensor and method of manufacturing the same

Also Published As

Publication number Publication date
JP2004048000A (ja) 2004-02-12
DE10328327A1 (de) 2004-03-18
US20030234364A1 (en) 2003-12-25
US6784434B2 (en) 2004-08-31

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8110 Request for examination paragraph 44
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R018 Grant decision by examination section/examining division
R020 Patent grant now final

Effective date: 20121013

R071 Expiry of right