JP2004048000A - 撮像アレイ及びその製造方法 - Google Patents

撮像アレイ及びその製造方法 Download PDF

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Publication number
JP2004048000A
JP2004048000A JP2003180550A JP2003180550A JP2004048000A JP 2004048000 A JP2004048000 A JP 2004048000A JP 2003180550 A JP2003180550 A JP 2003180550A JP 2003180550 A JP2003180550 A JP 2003180550A JP 2004048000 A JP2004048000 A JP 2004048000A
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JP
Japan
Prior art keywords
data line
tft
line strap
dielectric layer
radiation detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003180550A
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English (en)
Japanese (ja)
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JP2004048000A5 (https=
Inventor
William Andrew Hennessy
ウィリアム・アンドリュー・ヘネシー
Douglas Albagli
ダグラス・アルバグリー
Ji Ung Lee
チー・アン・リー
Ching-Yeu Wei
チン−イウ・ウェイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2004048000A publication Critical patent/JP2004048000A/ja
Publication of JP2004048000A5 publication Critical patent/JP2004048000A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP2003180550A 2002-06-25 2003-06-25 撮像アレイ及びその製造方法 Pending JP2004048000A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/183,904 US6784434B2 (en) 2002-06-25 2002-06-25 Imaging array and method for manufacturing same

Publications (2)

Publication Number Publication Date
JP2004048000A true JP2004048000A (ja) 2004-02-12
JP2004048000A5 JP2004048000A5 (https=) 2006-08-03

Family

ID=29735217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003180550A Pending JP2004048000A (ja) 2002-06-25 2003-06-25 撮像アレイ及びその製造方法

Country Status (3)

Country Link
US (1) US6784434B2 (https=)
JP (1) JP2004048000A (https=)
DE (1) DE10328327B4 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9419150B2 (en) 2007-05-14 2016-08-16 Mitsubishi Electric Corporation Photosensor

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100683526B1 (ko) * 2000-12-29 2007-02-15 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
KR100730066B1 (ko) * 2000-12-29 2007-06-20 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그 제조방법
US7081628B2 (en) * 2003-11-10 2006-07-25 Ge Medical Systems Global Technology Company, Llc Spatially patterned light-blocking layers for radiation imaging detectors
KR100626009B1 (ko) * 2004-06-30 2006-09-20 삼성에스디아이 주식회사 박막 트랜지스터 구조체 및 이를 구비하는 평판디스플레이 장치
WO2007136372A1 (en) * 2006-05-22 2007-11-29 Thomson Licensing Video system having a touch screen
US7687790B2 (en) * 2007-06-07 2010-03-30 General Electric Company EMI shielding of digital x-ray detectors with non-metallic enclosures
US9935152B2 (en) * 2012-12-27 2018-04-03 General Electric Company X-ray detector having improved noise performance
US9917133B2 (en) 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
WO2015138329A1 (en) 2014-03-13 2015-09-17 General Electric Company Curved digital x-ray detector for weld inspection

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198673A (en) * 1992-01-23 1993-03-30 General Electric Company Radiation image detector with optical gain selenium photosensors
US5399884A (en) * 1993-11-10 1995-03-21 General Electric Company Radiation imager with single passivation dielectric for transistor and diode
US5435608A (en) * 1994-06-17 1995-07-25 General Electric Company Radiation imager with common passivation dielectric for gate electrode and photosensor
TW479151B (en) * 1996-10-16 2002-03-11 Seiko Epson Corp Substrate for liquid crystal device, the liquid crystal device and projection-type display
US5838054A (en) * 1996-12-23 1998-11-17 General Electric Company Contact pads for radiation imagers
JP4011734B2 (ja) * 1998-06-02 2007-11-21 キヤノン株式会社 ２次元光センサ、それを用いた放射線検出装置及び放射線診断システム
KR100443902B1 (ko) * 1999-03-25 2004-08-09 엘지.필립스 엘시디 주식회사 엑스레이 영상 감지소자 및 그 제조방법
KR100630880B1 (ko) * 1999-12-31 2006-10-02 엘지.필립스 엘시디 주식회사 엑스레이 영상 감지소자 및 그 제조방법
JP3581073B2 (ja) * 2000-03-07 2004-10-27 シャープ株式会社 イメージセンサおよびその製造方法
KR100763137B1 (ko) * 2000-12-29 2007-10-02 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
US6847039B2 (en) * 2001-03-28 2005-01-25 Canon Kabushiki Kaisha Photodetecting device, radiation detecting device, and radiation imaging system
KR100396162B1 (ko) * 2001-11-01 2003-08-27 엘지.필립스 엘시디 주식회사 엑스-선 감지장치의 구동방법 및 장치
US6777685B2 (en) * 2002-04-03 2004-08-17 General Electric Company Imaging array and methods for fabricating same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9419150B2 (en) 2007-05-14 2016-08-16 Mitsubishi Electric Corporation Photosensor

Also Published As

Publication number Publication date
DE10328327A1 (de) 2004-03-18
US20030234364A1 (en) 2003-12-25
DE10328327B4 (de) 2012-07-12
US6784434B2 (en) 2004-08-31

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