DE10254617B4 - Gatekommutierte Halbleitervorrichtungen - Google Patents
Gatekommutierte Halbleitervorrichtungen Download PDFInfo
- Publication number
- DE10254617B4 DE10254617B4 DE10254617A DE10254617A DE10254617B4 DE 10254617 B4 DE10254617 B4 DE 10254617B4 DE 10254617 A DE10254617 A DE 10254617A DE 10254617 A DE10254617 A DE 10254617A DE 10254617 B4 DE10254617 B4 DE 10254617B4
- Authority
- DE
- Germany
- Prior art keywords
- gate
- gate electrode
- semiconductor element
- semiconductor device
- terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/60—Seals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
- H10W76/13—Containers comprising a conductive base serving as an interconnection
- H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002091507A JP4125908B2 (ja) | 2002-03-28 | 2002-03-28 | 半導体装置 |
| JP02-91507 | 2002-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE10254617A1 DE10254617A1 (de) | 2003-10-30 |
| DE10254617B4 true DE10254617B4 (de) | 2010-06-10 |
Family
ID=28449596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10254617A Expired - Lifetime DE10254617B4 (de) | 2002-03-28 | 2002-11-22 | Gatekommutierte Halbleitervorrichtungen |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6707144B2 (https=) |
| JP (1) | JP4125908B2 (https=) |
| DE (1) | DE10254617B4 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4504233B2 (ja) * | 2005-03-14 | 2010-07-14 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| DE102006034964B3 (de) * | 2006-07-28 | 2007-09-06 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem Leistungshalbleiterbauelement und mit einer Kontakteinrichtung |
| JP7496796B2 (ja) * | 2021-03-29 | 2024-06-07 | 三菱電機株式会社 | 半導体装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276636A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 半導体装置 |
| US4719500A (en) * | 1984-03-15 | 1988-01-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and a process of producing same |
| DE19708873A1 (de) * | 1997-03-05 | 1998-09-10 | Asea Brown Boveri | Gateeinheit für einen hart angesteuerten GTO |
| US6166402A (en) * | 1998-06-18 | 2000-12-26 | Kabushiki Kaisha Toshiba | Pressure-contact type semiconductor element and power converter thereof |
| EP1115151A1 (en) * | 1998-08-07 | 2001-07-11 | Hitachi, Ltd. | Flat semiconductor device, method for manufacturing the same, and converter comprising the same |
| US6445013B1 (en) * | 2000-04-13 | 2002-09-03 | Mitsubishi Denki Kabushiki Kaisha | Gate commutated turn-off semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6053057A (ja) | 1983-09-02 | 1985-03-26 | Mitsubishi Electric Corp | 半導体装置 |
| JP3588503B2 (ja) * | 1995-06-20 | 2004-11-10 | 株式会社東芝 | 圧接型半導体装置 |
| US6469399B2 (en) * | 1999-02-08 | 2002-10-22 | Advanced Semiconductor Engineering, Inc. | Semiconductor package |
-
2002
- 2002-03-28 JP JP2002091507A patent/JP4125908B2/ja not_active Expired - Lifetime
- 2002-09-24 US US10/252,568 patent/US6707144B2/en not_active Expired - Lifetime
- 2002-11-22 DE DE10254617A patent/DE10254617B4/de not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4719500A (en) * | 1984-03-15 | 1988-01-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and a process of producing same |
| JPS6276636A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 半導体装置 |
| DE19708873A1 (de) * | 1997-03-05 | 1998-09-10 | Asea Brown Boveri | Gateeinheit für einen hart angesteuerten GTO |
| US6166402A (en) * | 1998-06-18 | 2000-12-26 | Kabushiki Kaisha Toshiba | Pressure-contact type semiconductor element and power converter thereof |
| EP1115151A1 (en) * | 1998-08-07 | 2001-07-11 | Hitachi, Ltd. | Flat semiconductor device, method for manufacturing the same, and converter comprising the same |
| US6445013B1 (en) * | 2000-04-13 | 2002-09-03 | Mitsubishi Denki Kabushiki Kaisha | Gate commutated turn-off semiconductor device |
Non-Patent Citations (2)
| Title |
|---|
| JP 62 076 636 A (Abstract) * |
| JP 62-076 636 A (Abstract) |
Also Published As
| Publication number | Publication date |
|---|---|
| US6707144B2 (en) | 2004-03-16 |
| JP2003289138A (ja) | 2003-10-10 |
| JP4125908B2 (ja) | 2008-07-30 |
| DE10254617A1 (de) | 2003-10-30 |
| US20030183841A1 (en) | 2003-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8364 | No opposition during term of opposition | ||
| R084 | Declaration of willingness to licence | ||
| R071 | Expiry of right |