JP4125908B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4125908B2
JP4125908B2 JP2002091507A JP2002091507A JP4125908B2 JP 4125908 B2 JP4125908 B2 JP 4125908B2 JP 2002091507 A JP2002091507 A JP 2002091507A JP 2002091507 A JP2002091507 A JP 2002091507A JP 4125908 B2 JP4125908 B2 JP 4125908B2
Authority
JP
Japan
Prior art keywords
shaped
terminals
internal
gate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002091507A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003289138A (ja
JP2003289138A5 (https=
Inventor
和則 田口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002091507A priority Critical patent/JP4125908B2/ja
Priority to US10/252,568 priority patent/US6707144B2/en
Priority to DE10254617A priority patent/DE10254617B4/de
Publication of JP2003289138A publication Critical patent/JP2003289138A/ja
Publication of JP2003289138A5 publication Critical patent/JP2003289138A5/ja
Application granted granted Critical
Publication of JP4125908B2 publication Critical patent/JP4125908B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base

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  • Thyristors (AREA)
JP2002091507A 2002-03-28 2002-03-28 半導体装置 Expired - Lifetime JP4125908B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002091507A JP4125908B2 (ja) 2002-03-28 2002-03-28 半導体装置
US10/252,568 US6707144B2 (en) 2002-03-28 2002-09-24 Insulated high speed semiconductor switching device
DE10254617A DE10254617B4 (de) 2002-03-28 2002-11-22 Gatekommutierte Halbleitervorrichtungen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002091507A JP4125908B2 (ja) 2002-03-28 2002-03-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2003289138A JP2003289138A (ja) 2003-10-10
JP2003289138A5 JP2003289138A5 (https=) 2005-05-12
JP4125908B2 true JP4125908B2 (ja) 2008-07-30

Family

ID=28449596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002091507A Expired - Lifetime JP4125908B2 (ja) 2002-03-28 2002-03-28 半導体装置

Country Status (3)

Country Link
US (1) US6707144B2 (https=)
JP (1) JP4125908B2 (https=)
DE (1) DE10254617B4 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4504233B2 (ja) * 2005-03-14 2010-07-14 三菱電機株式会社 半導体装置およびその製造方法
DE102006034964B3 (de) * 2006-07-28 2007-09-06 Semikron Elektronik Gmbh & Co. Kg Anordnung mit einem Leistungshalbleiterbauelement und mit einer Kontakteinrichtung
JP7496796B2 (ja) * 2021-03-29 2024-06-07 三菱電機株式会社 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6053057A (ja) 1983-09-02 1985-03-26 Mitsubishi Electric Corp 半導体装置
JPS60194565A (ja) 1984-03-15 1985-10-03 Mitsubishi Electric Corp 半導体装置
JPS6276636A (ja) 1985-09-30 1987-04-08 Toshiba Corp 半導体装置
JP3588503B2 (ja) * 1995-06-20 2004-11-10 株式会社東芝 圧接型半導体装置
DE19708873A1 (de) * 1997-03-05 1998-09-10 Asea Brown Boveri Gateeinheit für einen hart angesteuerten GTO
JP3480901B2 (ja) * 1998-06-18 2003-12-22 株式会社東芝 圧接形半導体素子および電力変換装置
CA2339523A1 (en) * 1998-08-07 2000-02-17 Hitachi, Ltd. Flat semiconductor device, method for manufacturing the same, and converter comprising the same
US6469399B2 (en) * 1999-02-08 2002-10-22 Advanced Semiconductor Engineering, Inc. Semiconductor package
US6445013B1 (en) * 2000-04-13 2002-09-03 Mitsubishi Denki Kabushiki Kaisha Gate commutated turn-off semiconductor device

Also Published As

Publication number Publication date
US6707144B2 (en) 2004-03-16
DE10254617B4 (de) 2010-06-10
JP2003289138A (ja) 2003-10-10
DE10254617A1 (de) 2003-10-30
US20030183841A1 (en) 2003-10-02

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