DE10207328A1 - Verfahren zum Liefern unterschiedlicher Frequenzeinstellungen bei einem akustischen Dünnfilmvolumenresonator- (FBAR-) Filter und Vorrichtung, die das Verfahren beinhaltet - Google Patents
Verfahren zum Liefern unterschiedlicher Frequenzeinstellungen bei einem akustischen Dünnfilmvolumenresonator- (FBAR-) Filter und Vorrichtung, die das Verfahren beinhaltetInfo
- Publication number
- DE10207328A1 DE10207328A1 DE10207328A DE10207328A DE10207328A1 DE 10207328 A1 DE10207328 A1 DE 10207328A1 DE 10207328 A DE10207328 A DE 10207328A DE 10207328 A DE10207328 A DE 10207328A DE 10207328 A1 DE10207328 A1 DE 10207328A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- resonator
- electrode
- lower electrode
- over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000010409 thin film Substances 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 141
- 239000000463 material Substances 0.000 claims description 47
- 239000012792 core layer Substances 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 241000599985 Beijerinckia mobilis Species 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (21)
Erzeugen einer ersten unteren Elektrode (22) und einer zweiten unteren Elektrode (32) auf einem Substrat;
Erzeugen einer piezoelektrischen (PZ-)Kernschicht (14) über der ersten und der zweiten unteren Elektro de, wobei die PZ-Kernschicht (14) einen ersten Teil (24) über der ersten unteren Elektrode (22) und einen zweiten Teil (34) über der zweiten unteren Elektrode (32) aufweist;
Erzeugen einer zusätzlichen PZ-Schicht (25) über dem ersten Teil (24); und
Erzeugen einer ersten oberen Elektrode (26) über der zusätzlichen PZ-Schicht (25) und einer zweiten oberen Elektrode (36) über dem zweiten Teil (34) der PZ- Schicht (14).
Maskenbilden über der PZ-Kernschicht (14), nicht je doch über dem ersten Teil (24);
Aufbringen eines PZ-Materials über der Maske und dem ersten Teil (24); und
Entfernen der Maske, wodurch das gesamte PZ-Material über der Maske entfernt wird und das PZ-Material über dem ersten Teil (24) bleibt.
einem Substrat (12);
einem ersten Resonator (20), der auf dem Substrat (12) hergestellt ist, wobei der erste Resonator eine erste untere Elektrode (22), eine erste obere Elektrode (26) und ein erstes piezoelektrisches (PZ-)Material, das zwischen der ersten unteren Elektrode und der ersten oberen Elektrode angeordnet ist, aufweist, wobei das erste PZ-Material eine PZ-Kernschicht (14) und eine zusätzliche PZ-Schicht (25) aufweist; und
einem zweiten Resonator (30), der auf dem Substrat (12) hergestellt ist, wobei der zweite Resonator eine zweite untere Elektrode (32), eine zweite obere Elek trode (36) und ein zweites PZ-Material, das zwischen der zweiten unteren Elektrode und der zweiten oberen Elektrode angeordnet ist, aufweist.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/082,197 US6688651B2 (en) | 2002-02-21 | 2002-02-26 | Device for locking cap nut for coupling |
JP2002055186A JP2003254485A (ja) | 2002-02-21 | 2002-03-01 | カップリング用キャップナットのロッキング装置 |
GB0206392A GB2386657B (en) | 2002-02-21 | 2002-03-19 | Means for locking cap nut for coupling |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/799,149 | 2001-03-05 | ||
US09/799,149 US6483229B2 (en) | 2001-03-05 | 2001-03-05 | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10207328A1 true DE10207328A1 (de) | 2002-09-26 |
DE10207328B4 DE10207328B4 (de) | 2009-12-10 |
Family
ID=25175148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10207328A Expired - Fee Related DE10207328B4 (de) | 2001-03-05 | 2002-02-21 | Verfahren zum Liefern unterschiedlicher Frequenzeinstellungen bei einem akustischen Dünnfilmvolumenresonator- (FBAR-) Filter und Vorrichtung, die das Verfahren beinhaltet |
Country Status (3)
Country | Link |
---|---|
US (1) | US6483229B2 (de) |
JP (1) | JP3703437B2 (de) |
DE (1) | DE10207328B4 (de) |
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CN103701425B (zh) * | 2013-10-25 | 2017-05-03 | 诺思(天津)微系统有限公司 | 滤波器及其制造方法 |
JP6515042B2 (ja) * | 2016-01-25 | 2019-05-15 | 太陽誘電株式会社 | 弾性波デバイス |
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CN111082776B (zh) * | 2019-12-11 | 2021-06-01 | 诺思(天津)微系统有限责任公司 | 电极具有空隙层的体声波谐振器、滤波器及电子设备 |
CN111245394B (zh) * | 2019-12-16 | 2021-06-01 | 诺思(天津)微系统有限责任公司 | 电极具有空隙层与温补层的体声波谐振器、滤波器及电子设备 |
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-
2001
- 2001-03-05 US US09/799,149 patent/US6483229B2/en not_active Expired - Lifetime
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2002
- 2002-02-21 DE DE10207328A patent/DE10207328B4/de not_active Expired - Fee Related
- 2002-03-04 JP JP2002057361A patent/JP3703437B2/ja not_active Expired - Fee Related
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JP2002299979A (ja) | 2002-10-11 |
JP3703437B2 (ja) | 2005-10-05 |
US6483229B2 (en) | 2002-11-19 |
US20020121840A1 (en) | 2002-09-05 |
DE10207328B4 (de) | 2009-12-10 |
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