DE102022203190A1 - Vorspannungstopologien für hochfrequenzschalter - Google Patents

Vorspannungstopologien für hochfrequenzschalter Download PDF

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Publication number
DE102022203190A1
DE102022203190A1 DE102022203190.3A DE102022203190A DE102022203190A1 DE 102022203190 A1 DE102022203190 A1 DE 102022203190A1 DE 102022203190 A DE102022203190 A DE 102022203190A DE 102022203190 A1 DE102022203190 A1 DE 102022203190A1
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DE
Germany
Prior art keywords
switch
fet
series
node
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102022203190.3A
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German (de)
English (en)
Inventor
Lui Ray Lam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of DE102022203190A1 publication Critical patent/DE102022203190A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/1607—Supply circuits
    • H04B1/1615—Switching on; Switching off, e.g. remotely
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
DE102022203190.3A 2021-03-31 2022-03-31 Vorspannungstopologien für hochfrequenzschalter Pending DE102022203190A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163169053P 2021-03-31 2021-03-31
US63/169,053 2021-03-31

Publications (1)

Publication Number Publication Date
DE102022203190A1 true DE102022203190A1 (de) 2022-10-06

Family

ID=81449570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102022203190.3A Pending DE102022203190A1 (de) 2021-03-31 2022-03-31 Vorspannungstopologien für hochfrequenzschalter

Country Status (7)

Country Link
US (2) US11777499B2 (https=)
JP (1) JP7724743B2 (https=)
KR (1) KR20220136270A (https=)
CN (1) CN115149935A (https=)
DE (1) DE102022203190A1 (https=)
GB (1) GB2607419B (https=)
TW (1) TW202241062A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250105861A1 (en) * 2023-09-22 2025-03-27 Northrop Grumman Systems Corporation Super-lattice castellated field effect transistor (slcfet) switch system

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11901243B2 (en) 2013-11-12 2024-02-13 Skyworks Solutions, Inc. Methods related to radio-frequency switching devices having improved voltage handling capability
CN115580282B (zh) * 2022-10-31 2026-03-13 南京邮电大学 一种电感加载的超宽带半导体单刀双掷开关
CN116707503B (zh) * 2023-08-03 2023-12-01 中科海高(成都)电子技术有限公司 一种单刀双掷开关电路及工作方法、电子设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4850553B2 (ja) 2006-03-28 2012-01-11 新日本無線株式会社 スイッチ回路
JP2008011503A (ja) * 2006-05-31 2008-01-17 Matsushita Electric Ind Co Ltd 高周波スイッチ回路、高周波スイッチ装置、及び送信モジュール装置
JP4939857B2 (ja) 2006-07-04 2012-05-30 パナソニック株式会社 スイッチ回路
JP4902323B2 (ja) 2006-11-20 2012-03-21 パナソニック株式会社 半導体スイッチ回路
JP2012080247A (ja) 2010-09-30 2012-04-19 Renesas Electronics Corp 半導体装置および携帯電話機
JP5251953B2 (ja) * 2010-09-30 2013-07-31 株式会社村田製作所 スイッチ回路、半導体装置及び携帯無線機
US8933533B2 (en) * 2012-07-05 2015-01-13 Infineon Technologies Austria Ag Solid-state bidirectional switch having a first and a second power-FET
US9628075B2 (en) * 2012-07-07 2017-04-18 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling
JP2014053853A (ja) 2012-09-10 2014-03-20 Renesas Electronics Corp 高周波切替モジュール及び高周波切替回路
KR101901693B1 (ko) 2013-12-27 2018-09-27 삼성전기 주식회사 스위칭 회로 및 이를 포함하는 고주파 스위치
US10541682B2 (en) 2016-11-10 2020-01-21 Skyworks Solutions, Inc. Manifolded gate resistance network

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250105861A1 (en) * 2023-09-22 2025-03-27 Northrop Grumman Systems Corporation Super-lattice castellated field effect transistor (slcfet) switch system

Also Published As

Publication number Publication date
JP2022159156A (ja) 2022-10-17
GB2607419A (en) 2022-12-07
CN115149935A (zh) 2022-10-04
GB2607419B (en) 2024-05-01
US11777499B2 (en) 2023-10-03
TW202241062A (zh) 2022-10-16
US12176893B2 (en) 2024-12-24
US20240048143A1 (en) 2024-02-08
JP7724743B2 (ja) 2025-08-18
US20220321119A1 (en) 2022-10-06
KR20220136270A (ko) 2022-10-07
GB202204530D0 (en) 2022-05-11

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