DE102022002762A1 - Reinigungsverfahren zum Reinigen eines Hochtemperaturofens - Google Patents
Reinigungsverfahren zum Reinigen eines Hochtemperaturofens Download PDFInfo
- Publication number
- DE102022002762A1 DE102022002762A1 DE102022002762.3A DE102022002762A DE102022002762A1 DE 102022002762 A1 DE102022002762 A1 DE 102022002762A1 DE 102022002762 A DE102022002762 A DE 102022002762A DE 102022002762 A1 DE102022002762 A1 DE 102022002762A1
- Authority
- DE
- Germany
- Prior art keywords
- temperature
- cleaning
- gas atmosphere
- cleaning method
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000007789 gas Substances 0.000 claims abstract description 109
- 239000001257 hydrogen Substances 0.000 claims abstract description 36
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 36
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000000356 contaminant Substances 0.000 claims abstract description 14
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000007669 thermal treatment Methods 0.000 claims abstract description 5
- 238000000746 purification Methods 0.000 claims abstract 2
- 239000000203 mixture Substances 0.000 claims description 26
- 239000011261 inert gas Substances 0.000 claims description 20
- 238000005086 pumping Methods 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 claims description 4
- 238000011010 flushing procedure Methods 0.000 claims description 2
- 238000011109 contamination Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007857 degradation product Substances 0.000 description 3
- 238000004880 explosion Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102022002762.3A DE102022002762A1 (de) | 2022-07-29 | 2022-07-29 | Reinigungsverfahren zum Reinigen eines Hochtemperaturofens |
| TW112128339A TW202413870A (zh) | 2022-07-29 | 2023-07-28 | 清潔高溫爐以及半導體元件的清潔方法 |
| PCT/EP2023/071058 WO2024023327A1 (de) | 2022-07-29 | 2023-07-28 | Reinigungsverfahren zum reinigen eines hochtemperaturofens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102022002762.3A DE102022002762A1 (de) | 2022-07-29 | 2022-07-29 | Reinigungsverfahren zum Reinigen eines Hochtemperaturofens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102022002762A1 true DE102022002762A1 (de) | 2024-02-01 |
Family
ID=87556391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102022002762.3A Pending DE102022002762A1 (de) | 2022-07-29 | 2022-07-29 | Reinigungsverfahren zum Reinigen eines Hochtemperaturofens |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE102022002762A1 (zh) |
| TW (1) | TW202413870A (zh) |
| WO (1) | WO2024023327A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69421465T2 (de) | 1993-07-30 | 2000-02-10 | Applied Materials, Inc. | Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen |
| DE10008829B4 (de) | 2000-02-25 | 2005-06-23 | Steag Rtp Systems Gmbh | Verfahren zum Entfernen von adsorbierten Molekülen aus einer Kammer |
| JP2008159740A (ja) | 2006-12-22 | 2008-07-10 | Matsushita Electric Ind Co Ltd | ＳｉＣ単結晶の製造方法及びＳｉＣ単結晶の製造装置 |
| DE102013104105A1 (de) | 2013-04-23 | 2014-10-23 | Aixtron Se | MOCVD-Schichtwachstumsverfahren mit nachfolgendem mehrstufigen Reinigungsschritt |
| DE112012005411T5 (de) | 2011-12-23 | 2014-11-20 | Soitec | Verfahren und Systeme zur Verringerung unerwünschter Ablagerungen innerhalb einer mit einem Halbleiterabscheidungssystem verbundenen Reaktionskammer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015146161A1 (ja) * | 2014-03-24 | 2015-10-01 | キヤノンアネルバ株式会社 | 半導体基板の熱処理方法、半導体基板の製造方法、熱処理装置、及び基板処理システム |
| CN104925793B (zh) * | 2015-06-11 | 2017-03-01 | 湘能华磊光电股份有限公司 | 一种去除石墨表面氮化镓基化合物的方法 |
| KR20200035186A (ko) * | 2017-08-30 | 2020-04-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 통합 에피택시 시스템 고온 오염물 제거 |
-
2022
- 2022-07-29 DE DE102022002762.3A patent/DE102022002762A1/de active Pending
-
2023
- 2023-07-28 WO PCT/EP2023/071058 patent/WO2024023327A1/de unknown
- 2023-07-28 TW TW112128339A patent/TW202413870A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69421465T2 (de) | 1993-07-30 | 2000-02-10 | Applied Materials, Inc. | Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen |
| DE10008829B4 (de) | 2000-02-25 | 2005-06-23 | Steag Rtp Systems Gmbh | Verfahren zum Entfernen von adsorbierten Molekülen aus einer Kammer |
| JP2008159740A (ja) | 2006-12-22 | 2008-07-10 | Matsushita Electric Ind Co Ltd | ＳｉＣ単結晶の製造方法及びＳｉＣ単結晶の製造装置 |
| DE112012005411T5 (de) | 2011-12-23 | 2014-11-20 | Soitec | Verfahren und Systeme zur Verringerung unerwünschter Ablagerungen innerhalb einer mit einem Halbleiterabscheidungssystem verbundenen Reaktionskammer |
| DE102013104105A1 (de) | 2013-04-23 | 2014-10-23 | Aixtron Se | MOCVD-Schichtwachstumsverfahren mit nachfolgendem mehrstufigen Reinigungsschritt |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202413870A (zh) | 2024-04-01 |
| WO2024023327A1 (de) | 2024-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication |