DE102019120248A1 - Halbleitervorrichtung - Google Patents
Halbleitervorrichtung Download PDFInfo
- Publication number
- DE102019120248A1 DE102019120248A1 DE102019120248.5A DE102019120248A DE102019120248A1 DE 102019120248 A1 DE102019120248 A1 DE 102019120248A1 DE 102019120248 A DE102019120248 A DE 102019120248A DE 102019120248 A1 DE102019120248 A1 DE 102019120248A1
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- Prior art keywords
- circuit board
- semiconductor element
- encapsulation
- semiconductor device
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 275
- 238000005538 encapsulation Methods 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
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- 239000000758 substrate Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
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- 238000005219 brazing Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
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- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
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- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000792859 Enema Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 230000001419 dependent effect Effects 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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JP2018-174049 | 2018-09-18 | ||
JP2018174049A JP2020047725A (ja) | 2018-09-18 | 2018-09-18 | 半導体装置 |
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DE102019120248A1 true DE102019120248A1 (de) | 2020-03-19 |
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US (1) | US10950526B2 (ja) |
JP (1) | JP2020047725A (ja) |
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JP6771447B2 (ja) * | 2017-09-29 | 2020-10-21 | 日立オートモティブシステムズ株式会社 | パワー半導体装置およびそれを用いた電力変換装置 |
US10867894B2 (en) * | 2018-10-11 | 2020-12-15 | Asahi Kasei Microdevices Corporation | Semiconductor element including encapsulated lead frames |
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JP4812429B2 (ja) * | 2005-01-31 | 2011-11-09 | 三洋電機株式会社 | 回路装置の製造方法 |
JP5206743B2 (ja) * | 2010-07-05 | 2013-06-12 | 株式会社デンソー | 半導体モジュールおよびその製造方法 |
JP5427745B2 (ja) * | 2010-09-30 | 2014-02-26 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール及びその製造方法 |
JP5626087B2 (ja) * | 2011-04-13 | 2014-11-19 | 三菱電機株式会社 | 半導体装置 |
JP6001473B2 (ja) | 2013-02-12 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP6001472B2 (ja) | 2013-02-12 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP6578900B2 (ja) * | 2014-12-10 | 2019-09-25 | 株式会社デンソー | 半導体装置及びその製造方法 |
JP6354674B2 (ja) * | 2015-06-18 | 2018-07-11 | 株式会社デンソー | 半導体装置 |
JP6633859B2 (ja) * | 2015-07-31 | 2020-01-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6686691B2 (ja) * | 2016-05-16 | 2020-04-22 | 株式会社デンソー | 電子装置 |
JP6645396B2 (ja) * | 2016-10-07 | 2020-02-14 | 株式会社デンソー | 半導体装置 |
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2019
- 2019-07-26 DE DE102019120248.5A patent/DE102019120248A1/de not_active Ceased
- 2019-08-19 US US16/543,965 patent/US10950526B2/en active Active
- 2019-09-10 CN CN201910852738.3A patent/CN110911375A/zh active Pending
Also Published As
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CN110911375A (zh) | 2020-03-24 |
US10950526B2 (en) | 2021-03-16 |
US20200091042A1 (en) | 2020-03-19 |
JP2020047725A (ja) | 2020-03-26 |
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