DE102018004619A1 - CMP-Polierverfahren mit eingestellter Verweilzeit - Google Patents

CMP-Polierverfahren mit eingestellter Verweilzeit Download PDF

Info

Publication number
DE102018004619A1
DE102018004619A1 DE102018004619.3A DE102018004619A DE102018004619A1 DE 102018004619 A1 DE102018004619 A1 DE 102018004619A1 DE 102018004619 A DE102018004619 A DE 102018004619A DE 102018004619 A1 DE102018004619 A1 DE 102018004619A1
Authority
DE
Germany
Prior art keywords
polishing
polishing pad
grooves
wafer
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102018004619.3A
Other languages
German (de)
English (en)
Inventor
John Vu Nguyen
Tony Quan Tran
Jeffrey James Hendron
Jeffrey Robert Stack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102018004619A1 publication Critical patent/DE102018004619A1/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/0203—Making porous regions on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
DE102018004619.3A 2017-06-14 2018-06-11 CMP-Polierverfahren mit eingestellter Verweilzeit Pending DE102018004619A1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201715623204A 2017-06-14 2017-06-14
US15/623,204 2017-06-14
US201715624943A 2017-06-16 2017-06-16
US15/624,943 2017-06-16
US15/725,936 US10861702B2 (en) 2017-06-14 2017-10-05 Controlled residence CMP polishing method
US15/725,936 2017-10-05

Publications (1)

Publication Number Publication Date
DE102018004619A1 true DE102018004619A1 (de) 2018-12-20

Family

ID=64457733

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102018004619.3A Pending DE102018004619A1 (de) 2017-06-14 2018-06-11 CMP-Polierverfahren mit eingestellter Verweilzeit

Country Status (8)

Country Link
US (1) US10861702B2 (zh)
JP (1) JP7181009B2 (zh)
KR (1) KR102660719B1 (zh)
CN (1) CN109079586B (zh)
DE (1) DE102018004619A1 (zh)
FR (1) FR3067628B1 (zh)
SG (1) SG10201804562RA (zh)
TW (1) TWI762639B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210116759A (ko) 2020-03-13 2021-09-28 삼성전자주식회사 Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578362A (en) 1992-08-19 1996-11-26 Rodel, Inc. Polymeric polishing pad containing hollow polymeric microelements
US6120366A (en) 1998-12-29 2000-09-19 United Microelectronics Corp. Chemical-mechanical polishing pad

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037367A (en) 1975-12-22 1977-07-26 Kruse James A Grinding tool
US4450652A (en) * 1981-09-04 1984-05-29 Monsanto Company Temperature control for wafer polishing
JPS60242975A (ja) * 1984-05-14 1985-12-02 Kanebo Ltd 平面研磨装置
US5076024A (en) 1990-08-24 1991-12-31 Intelmatec Corporation Disk polisher assembly
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5527215A (en) 1992-01-10 1996-06-18 Schlegel Corporation Foam buffing pad having a finishing surface with a splash reducing configuration
US5243790A (en) 1992-06-25 1993-09-14 Abrasifs Vega, Inc. Abrasive member
US6135856A (en) * 1996-01-19 2000-10-24 Micron Technology, Inc. Apparatus and method for semiconductor planarization
US5778481A (en) 1996-02-15 1998-07-14 International Business Machines Corporation Silicon wafer cleaning and polishing pads
US5690540A (en) * 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
US5888121A (en) 1997-09-23 1999-03-30 Lsi Logic Corporation Controlling groove dimensions for enhanced slurry flow
US6749714B1 (en) 1999-03-30 2004-06-15 Nikon Corporation Polishing body, polisher, polishing method, and method for producing semiconductor device
US6220942B1 (en) 1999-04-02 2001-04-24 Applied Materials, Inc. CMP platen with patterned surface
JP2001071256A (ja) 1999-08-31 2001-03-21 Shinozaki Seisakusho:Kk 研磨パッドの溝形成方法及び装置並びに研磨パッド
US6827638B2 (en) * 2000-01-31 2004-12-07 Shin-Etsu Handotai Co., Ltd. Polishing device and method
TW479000B (en) 2000-02-24 2002-03-11 United Microelectronics Corp Polish pad for polishing semiconductor wafer
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
US6656019B1 (en) 2000-06-29 2003-12-02 International Business Machines Corporation Grooved polishing pads and methods of use
US8062098B2 (en) * 2000-11-17 2011-11-22 Duescher Wayne O High speed flat lapping platen
JP4087581B2 (ja) 2001-06-06 2008-05-21 株式会社荏原製作所 研磨装置
US7169014B2 (en) * 2002-07-18 2007-01-30 Micron Technology, Inc. Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces
US7377840B2 (en) 2004-07-21 2008-05-27 Neopad Technologies Corporation Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
US6783436B1 (en) 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US6918824B2 (en) 2003-09-25 2005-07-19 Novellus Systems, Inc. Uniform fluid distribution and exhaust system for a chemical-mechanical planarization device
US7125318B2 (en) * 2003-11-13 2006-10-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad having a groove arrangement for reducing slurry consumption
US6843711B1 (en) 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
US6955587B2 (en) 2004-01-30 2005-10-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Grooved polishing pad and method
JP2005262341A (ja) 2004-03-16 2005-09-29 Noritake Super Abrasive:Kk Ｃｍｐパッドコンディショナー
US7329174B2 (en) * 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
JP2007081322A (ja) 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
KR100568258B1 (ko) * 2004-07-01 2006-04-07 삼성전자주식회사 화학적 기계적 연마용 연마 패드 및 이를 이용하는 화학적기계적 연마 장치
USD559066S1 (en) 2004-10-26 2008-01-08 Jsr Corporation Polishing pad
US7169029B2 (en) 2004-12-16 2007-01-30 3M Innovative Properties Company Resilient structured sanding article
JP3769581B1 (ja) 2005-05-18 2006-04-26 東洋ゴム工業株式会社 研磨パッドおよびその製造方法
KR101279819B1 (ko) 2005-04-12 2013-06-28 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 방사-편향 연마 패드
US7534162B2 (en) 2005-09-06 2009-05-19 Freescale Semiconductor, Inc. Grooved platen with channels or pathway to ambient air
KR20070070094A (ko) * 2005-12-28 2007-07-03 제이에스알 가부시끼가이샤 화학 기계 연마 패드 및 화학 기계 연마 방법
US20080220702A1 (en) 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
JP4909706B2 (ja) 2006-10-24 2012-04-04 東洋ゴム工業株式会社 研磨パッド
US20090137187A1 (en) 2007-11-21 2009-05-28 Chien-Min Sung Diagnostic Methods During CMP Pad Dressing and Associated Systems
US9180570B2 (en) 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
TWI360459B (en) * 2008-04-11 2012-03-21 Bestac Advanced Material Co Ltd A polishing pad having groove structure for avoidi
KR20110100080A (ko) * 2010-03-03 2011-09-09 삼성전자주식회사 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비
KR101232787B1 (ko) 2010-08-18 2013-02-13 주식회사 엘지화학 연마 시스템용 연마 패드
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
TWI492818B (zh) * 2011-07-12 2015-07-21 Iv Technologies Co Ltd 研磨墊、研磨方法以及研磨系統
US8920219B2 (en) 2011-07-15 2014-12-30 Nexplanar Corporation Polishing pad with alignment aperture
CN103782372A (zh) 2011-09-15 2014-05-07 东丽株式会社 研磨垫
US9067298B2 (en) * 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with grooved foundation layer and polishing surface layer
WO2014074521A1 (en) 2012-11-06 2014-05-15 Cabot Microelectronics Corporation Polishing pad with offset concentric grooving pattern and method for polishing a substrate therewith
US9649742B2 (en) * 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
US9415479B2 (en) * 2013-02-08 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive chemical mechanical planarization polishing pad
TWM459065U (zh) 2013-04-29 2013-08-11 Iv Technologies Co Ltd 硏磨墊以及硏磨系統
TWM475334U (en) 2013-06-07 2014-04-01 Iv Technologies Co Ltd Polishing pad
TWI599447B (zh) 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
JP6197580B2 (ja) * 2013-10-29 2017-09-20 株式会社Sumco キャリアプレート及びワークの両面研磨装置
TWI549781B (zh) * 2015-08-07 2016-09-21 智勝科技股份有限公司 研磨墊、研磨系統及研磨方法
CN106564004B (zh) * 2016-11-17 2018-10-19 湖北鼎龙控股股份有限公司 一种抛光垫

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578362A (en) 1992-08-19 1996-11-26 Rodel, Inc. Polymeric polishing pad containing hollow polymeric microelements
US6120366A (en) 1998-12-29 2000-09-19 United Microelectronics Corp. Chemical-mechanical polishing pad

Also Published As

Publication number Publication date
JP7181009B2 (ja) 2022-11-30
FR3067628A1 (fr) 2018-12-21
CN109079586B (zh) 2021-05-14
KR20180136374A (ko) 2018-12-24
TW201905998A (zh) 2019-02-01
SG10201804562RA (en) 2019-01-30
JP2019030956A (ja) 2019-02-28
CN109079586A (zh) 2018-12-25
KR102660719B1 (ko) 2024-04-26
US20180366332A1 (en) 2018-12-20
US10861702B2 (en) 2020-12-08
FR3067628B1 (fr) 2022-04-01
TWI762639B (zh) 2022-05-01

Similar Documents

Publication Publication Date Title
DE102018004632A1 (de) Geneigte CMP-Puls-Rillenstruktur
DE102018004631A1 (de) Trapezförmige CMP-Rillenstruktur
DE102005002167B4 (de) Gerilltes Polierkissen
DE102008004874B4 (de) Polierkissen mit Rillen zum Halten einer Aufschlämmung auf der Kissentextur
DE19723060C2 (de) Verfahren und Vorrichtung zum chemisch-mechanischen Polieren
DE69919230T2 (de) Verfahren zur oberflächenmodifizierung von einem strukturierten wafer
DE60005816T2 (de) Polierkissen mit rillenmuster zur verwendung in einer chemisch-mechanischen poliervorrichtung
DE19648066C2 (de) Chemisch-mechanische Poliervorrichtung für Halbleiterwafer
DE10085092B4 (de) Aufbereitungsvorrichtung für eine Polierscheibe und Verfahren zum Herstellen derselben
DE102006016312B4 (de) Radial ausgerichtetes Polierkissen und Verfahren zum Polieren
DE602004007598T2 (de) Polierkissen mit Rillenanordnung zur Minderung des Schlammverbrauchs
DE102005059547A1 (de) CMP Polierkissen, das Rillen angeordnet aufweist, um eine Verwendung eines Poliermediums zu verbessern
DE69830944T2 (de) Polierkissen mit Rillenmuster zur Verwendung in einer chemisch-mechanischen Poliervorrichtung
DE60109601T2 (de) Rillen-polierkissen zum chemisch-mechanischen planarisieren
DE102007040546A1 (de) CPM-Kissen mit ungleichmäßig beabstandeten Rillen
DE102006000766A1 (de) CMP Kissen, das eine radial abwechselnde Rillensegmentkonfiguration aufweist
DE102018004633A1 (de) CMP-Polierverfahren mit hoher Geschwindigkeit
DE102018004634A1 (de) Einheitliches CMP-Polierverfahren
DE102005023469A1 (de) Polierkissen, das Nuten aufweist, die konfiguriert sind, um Mischwirbel während eines Polierens zu fördern
DE60306785T2 (de) Polierkissen
DE102010063179A1 (de) Verfahren zur gleichzeitigen Material abtragenden Bearbeitung beider Seiten mindestens dreier Halbleiterscheiben
DE602004007597T2 (de) Polierkissen mit Rillen zum Optimieren des Schlammverbrauchs
DE10208414B4 (de) Vorrichtung mit einem verbesserten Polierkissenaufbereiter für das chemisch mechanische Polieren
DE102009014550A1 (de) Planarisierungssystem
DE102006062017A1 (de) Haltering für ein chemisch-mechanisches Poliergerät