DE102016201542B4 - Frequenzvervielfacher - Google Patents

Frequenzvervielfacher Download PDF

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Publication number
DE102016201542B4
DE102016201542B4 DE102016201542.7A DE102016201542A DE102016201542B4 DE 102016201542 B4 DE102016201542 B4 DE 102016201542B4 DE 102016201542 A DE102016201542 A DE 102016201542A DE 102016201542 B4 DE102016201542 B4 DE 102016201542B4
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DE
Germany
Prior art keywords
terminal
transistor
output
gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102016201542.7A
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German (de)
English (en)
Other versions
DE102016201542A1 (de
Inventor
Hitoshi Kurusu
Yoshihiro Tsukahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nera Innovations Ltd
Original Assignee
Sonrai Memory Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sonrai Memory Ltd filed Critical Sonrai Memory Ltd
Publication of DE102016201542A1 publication Critical patent/DE102016201542A1/de
Application granted granted Critical
Publication of DE102016201542B4 publication Critical patent/DE102016201542B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/00006—Changing the frequency
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
    • G06G7/16—Arrangements for performing computing operations, e.g. operational amplifiers for multiplication or division
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/08—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a discharge device
    • H03B19/10—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a discharge device using multiplication only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Software Systems (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
DE102016201542.7A 2015-02-13 2016-02-02 Frequenzvervielfacher Expired - Fee Related DE102016201542B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015026705A JP6428341B2 (ja) 2015-02-13 2015-02-13 周波数逓倍器
JP2015-026705 2015-02-13

Publications (2)

Publication Number Publication Date
DE102016201542A1 DE102016201542A1 (de) 2016-08-18
DE102016201542B4 true DE102016201542B4 (de) 2021-10-14

Family

ID=56552510

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102016201542.7A Expired - Fee Related DE102016201542B4 (de) 2015-02-13 2016-02-02 Frequenzvervielfacher

Country Status (4)

Country Link
US (1) US9553568B2 (enExample)
JP (1) JP6428341B2 (enExample)
CN (1) CN105897169B (enExample)
DE (1) DE102016201542B4 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6747031B2 (ja) * 2016-04-15 2020-08-26 富士通株式会社 増幅器
CN107733370B (zh) * 2017-10-12 2022-03-04 机比特电子设备南京有限公司 一种基于0.13um SiGeBiCMOS工艺的宽带单平衡三倍频器
KR20190084402A (ko) * 2018-01-08 2019-07-17 삼성전자주식회사 무선 통신 시스템에서 발진 신호를 생성하기 위한 장치 및 방법
CN110112937B (zh) * 2019-04-03 2020-11-03 东南大学 适用于微波毫米波无线能量传输应用的开关晶体管整流器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03158008A (ja) 1989-11-15 1991-07-08 A T R Koudenpa Tsushin Kenkyusho:Kk マイクロ波周波数逓倍器
JP2001244746A (ja) 2000-02-29 2001-09-07 Fujitsu Quantum Devices Ltd マイクロ波周波数逓倍器
US20020024411A1 (en) 2000-08-18 2002-02-28 Fujitsu Quantum Devices Limited Distributed balanced frequency multiplier
JP2010016532A (ja) 2008-07-02 2010-01-21 Japan Radio Co Ltd 周波数逓倍器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1118849A (en) * 1979-08-28 1982-02-23 William D. Cornish Wideband mesfet microwave frequency divider
JP2904787B2 (ja) 1988-02-22 1999-06-14 株式会社日立製作所 ミクサ回路
JPH0773202B2 (ja) 1989-12-28 1995-08-02 三菱電機株式会社 半導体集積回路
US5661437A (en) * 1994-08-15 1997-08-26 Nippon Telegraph And Telephone Corporation Negative feedback variable gain amplifier circuit
JPH09153741A (ja) * 1995-09-13 1997-06-10 Fujitsu Ltd 変調器、間接変調型変調器、及び周波数逓倍器
JP3970454B2 (ja) * 1998-12-28 2007-09-05 新日本無線株式会社 高周波アイソレーションアンプ
JP2007336048A (ja) * 2006-06-13 2007-12-27 Nec Electronics Corp 高周波用電力増幅器
JP5562671B2 (ja) * 2010-02-05 2014-07-30 日本無線株式会社 周波数逓倍器
TWI513177B (zh) * 2013-01-02 2015-12-11 Mstar Semiconductor Inc 倍頻器以及訊號倍頻方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03158008A (ja) 1989-11-15 1991-07-08 A T R Koudenpa Tsushin Kenkyusho:Kk マイクロ波周波数逓倍器
JP2001244746A (ja) 2000-02-29 2001-09-07 Fujitsu Quantum Devices Ltd マイクロ波周波数逓倍器
US20020024411A1 (en) 2000-08-18 2002-02-28 Fujitsu Quantum Devices Limited Distributed balanced frequency multiplier
JP2010016532A (ja) 2008-07-02 2010-01-21 Japan Radio Co Ltd 周波数逓倍器

Also Published As

Publication number Publication date
JP2016149708A (ja) 2016-08-18
DE102016201542A1 (de) 2016-08-18
JP6428341B2 (ja) 2018-11-28
US9553568B2 (en) 2017-01-24
US20160241221A1 (en) 2016-08-18
CN105897169B (zh) 2019-12-10
CN105897169A (zh) 2016-08-24

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee