CN105897169B - 倍频器 - Google Patents
倍频器 Download PDFInfo
- Publication number
- CN105897169B CN105897169B CN201610082047.6A CN201610082047A CN105897169B CN 105897169 B CN105897169 B CN 105897169B CN 201610082047 A CN201610082047 A CN 201610082047A CN 105897169 B CN105897169 B CN 105897169B
- Authority
- CN
- China
- Prior art keywords
- gate
- transistor
- source
- frequency multiplier
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000006641 stabilisation Effects 0.000 claims abstract description 16
- 238000011105 stabilization Methods 0.000 claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 2
- 230000000087 stabilizing effect Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 4
- 238000013016 damping Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/00006—Changing the frequency
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
- G06G7/16—Arrangements for performing computing operations, e.g. operational amplifiers for multiplication or division
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/08—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a discharge device
- H03B19/10—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a discharge device using multiplication only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Software Systems (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
- Transmitters (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015026705A JP6428341B2 (ja) | 2015-02-13 | 2015-02-13 | 周波数逓倍器 |
JP2015-026705 | 2015-02-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105897169A CN105897169A (zh) | 2016-08-24 |
CN105897169B true CN105897169B (zh) | 2019-12-10 |
Family
ID=56552510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610082047.6A Expired - Fee Related CN105897169B (zh) | 2015-02-13 | 2016-02-05 | 倍频器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9553568B2 (zh) |
JP (1) | JP6428341B2 (zh) |
CN (1) | CN105897169B (zh) |
DE (1) | DE102016201542B4 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6747031B2 (ja) * | 2016-04-15 | 2020-08-26 | 富士通株式会社 | 増幅器 |
CN107733370B (zh) * | 2017-10-12 | 2022-03-04 | 机比特电子设备南京有限公司 | 一种基于0.13um SiGeBiCMOS工艺的宽带单平衡三倍频器 |
CN110112937B (zh) * | 2019-04-03 | 2020-11-03 | 东南大学 | 适用于微波毫米波无线能量传输应用的开关晶体管整流器 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2807508B2 (ja) * | 1989-11-15 | 1998-10-08 | 株式会社エイ・ティ・アール光電波通信研究所 | マイクロ波周波数逓倍器 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1118849A (en) * | 1979-08-28 | 1982-02-23 | William D. Cornish | Wideband mesfet microwave frequency divider |
JP2904787B2 (ja) | 1988-02-22 | 1999-06-14 | 株式会社日立製作所 | ミクサ回路 |
JPH0773202B2 (ja) | 1989-12-28 | 1995-08-02 | 三菱電機株式会社 | 半導体集積回路 |
US5661437A (en) * | 1994-08-15 | 1997-08-26 | Nippon Telegraph And Telephone Corporation | Negative feedback variable gain amplifier circuit |
JPH09153741A (ja) * | 1995-09-13 | 1997-06-10 | Fujitsu Ltd | 変調器、間接変調型変調器、及び周波数逓倍器 |
JP3970454B2 (ja) * | 1998-12-28 | 2007-09-05 | 新日本無線株式会社 | 高周波アイソレーションアンプ |
JP3366314B2 (ja) | 2000-02-29 | 2003-01-14 | 富士通カンタムデバイス株式会社 | マイクロ波周波数逓倍器 |
JP3504598B2 (ja) * | 2000-08-18 | 2004-03-08 | 富士通カンタムデバイス株式会社 | マイクロ波又はミリ波に対するバランス型周波数逓倍器 |
JP2007336048A (ja) * | 2006-06-13 | 2007-12-27 | Nec Electronics Corp | 高周波用電力増幅器 |
JP2010016532A (ja) | 2008-07-02 | 2010-01-21 | Japan Radio Co Ltd | 周波数逓倍器 |
JP5562671B2 (ja) * | 2010-02-05 | 2014-07-30 | 日本無線株式会社 | 周波数逓倍器 |
TWI513177B (zh) * | 2013-01-02 | 2015-12-11 | Mstar Semiconductor Inc | 倍頻器以及訊號倍頻方法 |
-
2015
- 2015-02-13 JP JP2015026705A patent/JP6428341B2/ja active Active
- 2015-10-28 US US14/925,344 patent/US9553568B2/en active Active
-
2016
- 2016-02-02 DE DE102016201542.7A patent/DE102016201542B4/de active Active
- 2016-02-05 CN CN201610082047.6A patent/CN105897169B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2807508B2 (ja) * | 1989-11-15 | 1998-10-08 | 株式会社エイ・ティ・アール光電波通信研究所 | マイクロ波周波数逓倍器 |
Also Published As
Publication number | Publication date |
---|---|
US20160241221A1 (en) | 2016-08-18 |
DE102016201542B4 (de) | 2021-10-14 |
US9553568B2 (en) | 2017-01-24 |
CN105897169A (zh) | 2016-08-24 |
DE102016201542A1 (de) | 2016-08-18 |
JP2016149708A (ja) | 2016-08-18 |
JP6428341B2 (ja) | 2018-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200707 Address after: Ai Erlandubailin Patentee after: Argona Technology Co.,Ltd. Address before: Tokyo, Japan Patentee before: Mitsubishi Electric Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200907 Address after: Suite 23, Hyde building, carikming Park, Dublin, Ireland Patentee after: Sunley storage Co.,Ltd. Address before: Ai Erlandubailin Patentee before: Argona Technology Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191210 |