DE102015221376A1 - Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug - Google Patents
Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug Download PDFInfo
- Publication number
- DE102015221376A1 DE102015221376A1 DE102015221376.5A DE102015221376A DE102015221376A1 DE 102015221376 A1 DE102015221376 A1 DE 102015221376A1 DE 102015221376 A DE102015221376 A DE 102015221376A DE 102015221376 A1 DE102015221376 A1 DE 102015221376A1
- Authority
- DE
- Germany
- Prior art keywords
- field plate
- semiconductor device
- semiconductor
- drain
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title description 3
- 230000005284 excitation Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 6
- 230000036962 time dependent Effects 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015221376.5A DE102015221376A1 (de) | 2015-11-02 | 2015-11-02 | Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug |
| CN201610944323.5A CN107068738B (zh) | 2015-11-02 | 2016-11-02 | 电装置及用于制造电装置的方法以及用于车辆的控制装置 |
| JP2016214893A JP6861498B2 (ja) | 2015-11-02 | 2016-11-02 | 半導体デバイス及び半導体デバイスの製造方法並びに車両用制御装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015221376.5A DE102015221376A1 (de) | 2015-11-02 | 2015-11-02 | Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102015221376A1 true DE102015221376A1 (de) | 2017-05-04 |
Family
ID=58545991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102015221376.5A Pending DE102015221376A1 (de) | 2015-11-02 | 2015-11-02 | Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6861498B2 (zh) |
| CN (1) | CN107068738B (zh) |
| DE (1) | DE102015221376A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11411104B2 (en) | 2020-03-10 | 2022-08-09 | Kabushiki Kaisha Toshiba | Semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080088355A1 (en) | 2006-10-13 | 2008-04-17 | Infineon Technologies Austria Ag | Integrated circuit including a semiconductor device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005528796A (ja) * | 2002-05-31 | 2005-09-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | トレンチ・ゲート半導体装置と製造方法 |
| JP4903055B2 (ja) * | 2003-12-30 | 2012-03-21 | フェアチャイルド・セミコンダクター・コーポレーション | パワー半導体デバイスおよびその製造方法 |
| DE102005055954A1 (de) * | 2005-11-24 | 2007-05-31 | Robert Bosch Gmbh | Schaltungsanordnung und Verfahren zur Funktionsüberprüfung eines Leistungstransistors |
| KR100782430B1 (ko) * | 2006-09-22 | 2007-12-05 | 한국과학기술원 | 고전력을 위한 내부전계전극을 갖는 갈륨나이트라이드기반의 고전자 이동도 트랜지스터 구조 |
| JP2008177333A (ja) * | 2007-01-18 | 2008-07-31 | Institute Of National Colleges Of Technology Japan | Ｓｏｉトランジスタの評価方法および評価装置 |
| JP5580150B2 (ja) * | 2010-09-09 | 2014-08-27 | 株式会社東芝 | 半導体装置 |
| US9166028B2 (en) * | 2011-05-31 | 2015-10-20 | Infineon Technologies Austria Ag | Circuit configured to adjust the activation state of transistors based on load conditions |
| JP6075003B2 (ja) * | 2012-10-22 | 2017-02-08 | 富士通株式会社 | トランジスタの制御回路及び電源装置 |
| JP2016152357A (ja) * | 2015-02-18 | 2016-08-22 | 株式会社東芝 | 半導体装置および半導体パッケージ |
-
2015
- 2015-11-02 DE DE102015221376.5A patent/DE102015221376A1/de active Pending
-
2016
- 2016-11-02 JP JP2016214893A patent/JP6861498B2/ja active Active
- 2016-11-02 CN CN201610944323.5A patent/CN107068738B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080088355A1 (en) | 2006-10-13 | 2008-04-17 | Infineon Technologies Austria Ag | Integrated circuit including a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107068738B (zh) | 2021-11-19 |
| CN107068738A (zh) | 2017-08-18 |
| JP2017092466A (ja) | 2017-05-25 |
| JP6861498B2 (ja) | 2021-04-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed |