DE102015221375A1 - Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug - Google Patents
Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug Download PDFInfo
- Publication number
- DE102015221375A1 DE102015221375A1 DE102015221375.7A DE102015221375A DE102015221375A1 DE 102015221375 A1 DE102015221375 A1 DE 102015221375A1 DE 102015221375 A DE102015221375 A DE 102015221375A DE 102015221375 A1 DE102015221375 A1 DE 102015221375A1
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- semiconductor device
- conductive material
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004020 conductor Substances 0.000 claims abstract description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 32
- 229920005591 polysilicon Polymers 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
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- 230000008859 change Effects 0.000 description 5
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- 239000011810 insulating material Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015221375.7A DE102015221375A1 (de) | 2015-11-02 | 2015-11-02 | Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug |
| JP2016214892A JP6827772B2 (ja) | 2015-11-02 | 2016-11-02 | 半導体デバイス及び半導体デバイスの製造方法並びに車両用制御装置 |
| CN201610944851.0A CN106910772B (zh) | 2015-11-02 | 2016-11-02 | 半导体结构元件及用于制造半导体结构元件的方法以及用于车辆的控制装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015221375.7A DE102015221375A1 (de) | 2015-11-02 | 2015-11-02 | Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102015221375A1 true DE102015221375A1 (de) | 2017-05-04 |
Family
ID=58546036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102015221375.7A Pending DE102015221375A1 (de) | 2015-11-02 | 2015-11-02 | Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6827772B2 (ja) |
| CN (1) | CN106910772B (ja) |
| DE (1) | DE102015221375A1 (ja) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006319241A (ja) | 2005-05-16 | 2006-11-24 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
| US20100327348A1 (en) | 2009-06-24 | 2010-12-30 | Renesas Electronics Corporation | Semiconductor device, method of manufacturing the same and power-supply device using the same |
| US20110318897A1 (en) | 2010-06-25 | 2011-12-29 | International Business Machines Corporation | Method of Forming a Shallow Trench Isolation Embedded Polysilicon Resistor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004281918A (ja) * | 2003-03-18 | 2004-10-07 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
| JP2004319624A (ja) * | 2003-04-14 | 2004-11-11 | Denso Corp | 半導体装置 |
| JP5138274B2 (ja) * | 2007-05-25 | 2013-02-06 | 三菱電機株式会社 | 半導体装置 |
| US8907415B2 (en) * | 2011-05-16 | 2014-12-09 | Force Mos Technology Co., Ltd. | High switching trench MOSFET |
| US9570553B2 (en) * | 2013-08-19 | 2017-02-14 | Infineon Technologies Austria Ag | Semiconductor chip with integrated series resistances |
-
2015
- 2015-11-02 DE DE102015221375.7A patent/DE102015221375A1/de active Pending
-
2016
- 2016-11-02 JP JP2016214892A patent/JP6827772B2/ja active Active
- 2016-11-02 CN CN201610944851.0A patent/CN106910772B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006319241A (ja) | 2005-05-16 | 2006-11-24 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
| US20100327348A1 (en) | 2009-06-24 | 2010-12-30 | Renesas Electronics Corporation | Semiconductor device, method of manufacturing the same and power-supply device using the same |
| US20110318897A1 (en) | 2010-06-25 | 2011-12-29 | International Business Machines Corporation | Method of Forming a Shallow Trench Isolation Embedded Polysilicon Resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6827772B2 (ja) | 2021-02-10 |
| JP2017092465A (ja) | 2017-05-25 |
| CN106910772B (zh) | 2021-06-15 |
| CN106910772A (zh) | 2017-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed |