DE102015205719B4 - Verfahren zum Beschichten von Halbleiterscheiben - Google Patents

Verfahren zum Beschichten von Halbleiterscheiben Download PDF

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Publication number
DE102015205719B4
DE102015205719B4 DE102015205719.4A DE102015205719A DE102015205719B4 DE 102015205719 B4 DE102015205719 B4 DE 102015205719B4 DE 102015205719 A DE102015205719 A DE 102015205719A DE 102015205719 B4 DE102015205719 B4 DE 102015205719B4
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DE
Germany
Prior art keywords
coating
epitaxial reactor
gas
cleaning process
passed
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Active
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DE102015205719.4A
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German (de)
English (en)
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DE102015205719A1 (de
Inventor
Jörg Haberecht
Christian Hager
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic AG filed Critical Siltronic AG
Priority to DE102015205719.4A priority Critical patent/DE102015205719B4/de
Priority to PCT/EP2016/052227 priority patent/WO2016155915A1/de
Priority to CN201680019950.6A priority patent/CN107438676B/zh
Priority to KR1020177030012A priority patent/KR102061955B1/ko
Priority to TW105109679A priority patent/TWI597778B/zh
Publication of DE102015205719A1 publication Critical patent/DE102015205719A1/de
Application granted granted Critical
Publication of DE102015205719B4 publication Critical patent/DE102015205719B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma & Fusion (AREA)
DE102015205719.4A 2015-03-30 2015-03-30 Verfahren zum Beschichten von Halbleiterscheiben Active DE102015205719B4 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102015205719.4A DE102015205719B4 (de) 2015-03-30 2015-03-30 Verfahren zum Beschichten von Halbleiterscheiben
PCT/EP2016/052227 WO2016155915A1 (de) 2015-03-30 2016-02-03 Verfahren zum beschichten von halbleiterscheiben
CN201680019950.6A CN107438676B (zh) 2015-03-30 2016-02-03 用于涂覆半导体晶圆的方法
KR1020177030012A KR102061955B1 (ko) 2015-03-30 2016-02-03 반도체 웨이퍼들을 코팅하기 위한 방법
TW105109679A TWI597778B (zh) 2015-03-30 2016-03-28 半導體晶圓的塗覆方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102015205719.4A DE102015205719B4 (de) 2015-03-30 2015-03-30 Verfahren zum Beschichten von Halbleiterscheiben

Publications (2)

Publication Number Publication Date
DE102015205719A1 DE102015205719A1 (de) 2016-10-06
DE102015205719B4 true DE102015205719B4 (de) 2022-08-18

Family

ID=55315402

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102015205719.4A Active DE102015205719B4 (de) 2015-03-30 2015-03-30 Verfahren zum Beschichten von Halbleiterscheiben

Country Status (5)

Country Link
KR (1) KR102061955B1 (zh)
CN (1) CN107438676B (zh)
DE (1) DE102015205719B4 (zh)
TW (1) TWI597778B (zh)
WO (1) WO2016155915A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015225663A1 (de) 2015-12-17 2017-06-22 Siltronic Ag Verfahren zum epitaktischen Beschichten von Halbleiterscheiben und Halbleiterscheibe
EP4074861A1 (de) * 2021-04-13 2022-10-19 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit aus der gasphase abgeschiedener epitaktischer schicht in einer abscheidekammer

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0562912A (ja) 1991-09-04 1993-03-12 Toshiba Corp 気相成長装置及び装置内のクリーニング方法
US6291358B1 (en) 1999-10-15 2001-09-18 Micron Technology, Inc. Plasma deposition tool operating method
JP2004193396A (ja) 2002-12-12 2004-07-08 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
US20040180553A1 (en) 2003-03-13 2004-09-16 Park Young Hoon Method of depositing ALD thin films on wafer
US20060169669A1 (en) 2005-01-31 2006-08-03 Applied Materials, Inc. Etchant treatment processes for substrate surfaces and chamber surfaces
US20070042570A1 (en) 2005-08-18 2007-02-22 Tokyo Electron Limited Sequential deposition process for forming Si-containing films
US20090252942A1 (en) 2005-11-22 2009-10-08 Shin-Etsu Handotai Co., Ltd. Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer
DE102010006725A1 (de) 2010-02-03 2011-08-04 Siltronic AG, 81737 Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium mit einer epitaktisch abgeschiedenen Schicht

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5952060A (en) * 1996-06-14 1999-09-14 Applied Materials, Inc. Use of carbon-based films in extending the lifetime of substrate processing system components
DE102005045339B4 (de) * 2005-09-22 2009-04-02 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
DE102005045337B4 (de) * 2005-09-22 2008-08-21 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
DE102005045338B4 (de) * 2005-09-22 2009-04-02 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
US7867921B2 (en) * 2007-09-07 2011-01-11 Applied Materials, Inc. Reduction of etch-rate drift in HDP processes
CN101388341B (zh) * 2007-09-07 2011-07-27 应用材料股份有限公司 在hdp-cvd沉积/蚀刻/沉积工艺中的杂质控制

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0562912A (ja) 1991-09-04 1993-03-12 Toshiba Corp 気相成長装置及び装置内のクリーニング方法
US6291358B1 (en) 1999-10-15 2001-09-18 Micron Technology, Inc. Plasma deposition tool operating method
JP2004193396A (ja) 2002-12-12 2004-07-08 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
US20040180553A1 (en) 2003-03-13 2004-09-16 Park Young Hoon Method of depositing ALD thin films on wafer
US20060169669A1 (en) 2005-01-31 2006-08-03 Applied Materials, Inc. Etchant treatment processes for substrate surfaces and chamber surfaces
US20070042570A1 (en) 2005-08-18 2007-02-22 Tokyo Electron Limited Sequential deposition process for forming Si-containing films
US20090252942A1 (en) 2005-11-22 2009-10-08 Shin-Etsu Handotai Co., Ltd. Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer
DE102010006725A1 (de) 2010-02-03 2011-08-04 Siltronic AG, 81737 Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium mit einer epitaktisch abgeschiedenen Schicht

Also Published As

Publication number Publication date
WO2016155915A1 (de) 2016-10-06
KR20170126505A (ko) 2017-11-17
TW201635372A (zh) 2016-10-01
DE102015205719A1 (de) 2016-10-06
CN107438676A (zh) 2017-12-05
KR102061955B1 (ko) 2020-01-02
CN107438676B (zh) 2020-05-05
TWI597778B (zh) 2017-09-01

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