DE102015005210A1 - Doppelstapel-Varaktor - Google Patents

Doppelstapel-Varaktor Download PDF

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Publication number
DE102015005210A1
DE102015005210A1 DE102015005210.1A DE102015005210A DE102015005210A1 DE 102015005210 A1 DE102015005210 A1 DE 102015005210A1 DE 102015005210 A DE102015005210 A DE 102015005210A DE 102015005210 A1 DE102015005210 A1 DE 102015005210A1
Authority
DE
Germany
Prior art keywords
layer
varactor
contact
anode
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102015005210.1A
Other languages
German (de)
English (en)
Inventor
Peter V. Wright
Timothy S. Henderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
Triquint Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Triquint Semiconductor Inc filed Critical Triquint Semiconductor Inc
Publication of DE102015005210A1 publication Critical patent/DE102015005210A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/041—Manufacture or treatment of multilayer diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/215—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE102015005210.1A 2014-05-08 2015-04-23 Doppelstapel-Varaktor Withdrawn DE102015005210A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/273,316 2014-05-08
US14/273,316 US20150325573A1 (en) 2014-05-08 2014-05-08 Dual stack varactor

Publications (1)

Publication Number Publication Date
DE102015005210A1 true DE102015005210A1 (de) 2015-11-26

Family

ID=54347385

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102015005210.1A Withdrawn DE102015005210A1 (de) 2014-05-08 2015-04-23 Doppelstapel-Varaktor

Country Status (5)

Country Link
US (2) US20150325573A1 (https=)
CN (1) CN105097956A (https=)
DE (1) DE102015005210A1 (https=)
FR (1) FR3020898B1 (https=)
TW (1) TW201603291A (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150325573A1 (en) 2014-05-08 2015-11-12 Triquint Semiconductor, Inc. Dual stack varactor
US10109623B2 (en) 2014-05-08 2018-10-23 Qorvo Us, Inc. Dual-series varactor EPI
US9484471B2 (en) 2014-09-12 2016-11-01 Qorvo Us, Inc. Compound varactor
US9590669B2 (en) 2015-05-08 2017-03-07 Qorvo Us, Inc. Single varactor stack with low second-harmonic generation
DE102018213635B4 (de) 2018-08-13 2020-11-05 Infineon Technologies Ag Halbleitervorrichtung
DE102018213633B9 (de) * 2018-08-13 2025-01-09 Infineon Technologies Ag Halbleitervorrichtung
US11791342B2 (en) 2021-11-17 2023-10-17 International Business Machines Corporation Varactor integrated with complementary metal-oxide semiconductor devices
US12484262B2 (en) 2021-11-17 2025-11-25 International Business Machines Corporation Tunnel field effect transistor devices
US20230353092A1 (en) * 2022-04-29 2023-11-02 Shaoxing Yuanfang Semiconductor Co., Ltd. Semiconductor switches for analog signals with improved linear response
US12520507B2 (en) 2022-08-26 2026-01-06 Globalfoundries U.S. Inc. Structures for a vertical varactor diode and related methods
CN118173547B (zh) * 2024-04-10 2024-11-05 安徽长飞先进半导体股份有限公司 一种功率器件、功率模块、功率转换电路以及车辆
CN118335729A (zh) * 2024-04-10 2024-07-12 安徽长飞先进半导体有限公司 一种功率器件、功率模块、功率转换电路以及车辆

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2321771A1 (fr) 1975-08-19 1977-03-18 Thomson Csf Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede
US4843358A (en) 1987-05-19 1989-06-27 General Electric Company Electrically positionable short-circuits
US5055889A (en) 1989-10-31 1991-10-08 Knauf Fiber Glass, Gmbh Lateral varactor with staggered punch-through and method of fabrication
JP3299807B2 (ja) 1993-04-07 2002-07-08 シャープ株式会社 ヘテロ接合バイポーラトランジスタ
US5405790A (en) * 1993-11-23 1995-04-11 Motorola, Inc. Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
US6559024B1 (en) * 2000-03-29 2003-05-06 Tyco Electronics Corporation Method of fabricating a variable capacity diode having a hyperabrupt junction profile
JP2001345328A (ja) 2000-06-02 2001-12-14 Nec Corp 半導体装置、及び、半導体集積回路
SE517440C2 (sv) 2000-06-20 2002-06-04 Ericsson Telefon Ab L M Elektriskt avstämbar anordning och ett förfarande relaterande därtill
KR100425578B1 (ko) 2001-09-17 2004-04-03 한국전자통신연구원 ＳｉＧｅ 이종접합 바이폴라 트랜지스터를 이용하여개선된 Ｑ-인자 특성을 갖는 버렉터 및 그 제조 방법
WO2003028106A2 (en) 2001-09-24 2003-04-03 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
JP2004241624A (ja) 2003-02-06 2004-08-26 Mitsubishi Electric Corp 電圧制御発振回路
US6727530B1 (en) 2003-03-04 2004-04-27 Xindium Technologies, Inc. Integrated photodetector and heterojunction bipolar transistors
KR100517289B1 (ko) * 2003-08-21 2005-09-28 주식회사 케이이씨 바렉터 및 그 제조 방법
JP4977313B2 (ja) 2004-01-19 2012-07-18 ルネサスエレクトロニクス株式会社 ヘテロ接合バイポーラトランジスタ
JP4857531B2 (ja) 2004-07-08 2012-01-18 三菱電機株式会社 半導体装置
WO2006038150A2 (en) * 2004-10-05 2006-04-13 Koninklijke Philips Electronics N.V. Semiconductor device and use thereof
CN101288230A (zh) 2005-06-08 2008-10-15 加利福尼亚大学董事会 线性可变电压二极管电容器和自适应匹配网络
US20070132065A1 (en) 2005-12-08 2007-06-14 Su Jae Lee Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same
US8022458B2 (en) 2007-10-08 2011-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitors integrated with metal gate formation
US8130051B2 (en) 2008-02-06 2012-03-06 Broadcom Corporation Method and system for varactor linearization
US7919382B2 (en) * 2008-09-09 2011-04-05 Freescale Semicondcutor, Inc. Methods for forming varactor diodes
JP4803241B2 (ja) 2008-11-27 2011-10-26 三菱電機株式会社 半導体モジュール
US9059332B2 (en) 2009-10-02 2015-06-16 Skyworks Solutions, Inc. Continuous tunable LC resonator using a FET as a varactor
US20130313683A1 (en) 2012-05-24 2013-11-28 International Business Machines Corporation Semiconductor wire-array varactor structures
TWI512905B (zh) * 2012-06-13 2015-12-11 Win Semiconductors Corp 化合物半導體元件晶圓整合結構
US8709868B2 (en) 2012-08-23 2014-04-29 Freescale Semiconductor, Inc. Sensor packages and method of packaging dies of differing sizes
US8809155B2 (en) 2012-10-04 2014-08-19 International Business Machines Corporation Back-end-of-line metal-oxide-semiconductor varactors
US8716757B1 (en) 2012-10-19 2014-05-06 Global Communication Semiconductors, Inc. Monolithic HBT with wide-tuning range varactor
KR101936036B1 (ko) 2013-02-08 2019-01-09 삼성전자 주식회사 커패시터 구조물
US9437772B2 (en) * 2013-03-15 2016-09-06 Matthew H. Kim Method of manufacture of advanced heterojunction transistor and transistor laser
US10109623B2 (en) 2014-05-08 2018-10-23 Qorvo Us, Inc. Dual-series varactor EPI
US20150325573A1 (en) 2014-05-08 2015-11-12 Triquint Semiconductor, Inc. Dual stack varactor
US20160133758A1 (en) 2014-05-08 2016-05-12 Triquint Semiconductor, Inc. Dual stack varactor
JP6299494B2 (ja) * 2014-07-09 2018-03-28 日亜化学工業株式会社 発光装置及びその製造方法
US9484471B2 (en) 2014-09-12 2016-11-01 Qorvo Us, Inc. Compound varactor
US9590669B2 (en) 2015-05-08 2017-03-07 Qorvo Us, Inc. Single varactor stack with low second-harmonic generation

Also Published As

Publication number Publication date
US10535784B2 (en) 2020-01-14
FR3020898A1 (https=) 2015-11-13
TW201603291A (zh) 2016-01-16
US20150325573A1 (en) 2015-11-12
US20180182903A1 (en) 2018-06-28
CN105097956A (zh) 2015-11-25
FR3020898B1 (fr) 2018-07-27

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Legal Events

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee