DE102014218474A1 - Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie - Google Patents

Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie Download PDF

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Publication number
DE102014218474A1
DE102014218474A1 DE102014218474.6A DE102014218474A DE102014218474A1 DE 102014218474 A1 DE102014218474 A1 DE 102014218474A1 DE 102014218474 A DE102014218474 A DE 102014218474A DE 102014218474 A1 DE102014218474 A1 DE 102014218474A1
Authority
DE
Germany
Prior art keywords
projection
mirror
mask
projection objective
displacement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102014218474.6A
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German (de)
English (en)
Inventor
Stephan André
Daniel Golde
Toralf Gruner
Johannes Ruoff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE102014218474.6A priority Critical patent/DE102014218474A1/de
Priority to CN201580049768.0A priority patent/CN107077074B/zh
Priority to JP2017533703A priority patent/JP6714595B2/ja
Priority to CN202010179331.1A priority patent/CN111505909A/zh
Priority to EP15759468.0A priority patent/EP3195060B1/en
Priority to KR1020177009820A priority patent/KR102469060B1/ko
Priority to PCT/EP2015/070391 priority patent/WO2016041805A1/en
Priority to TW104130274A priority patent/TWI681258B/zh
Priority to TW108134443A priority patent/TWI714278B/zh
Publication of DE102014218474A1 publication Critical patent/DE102014218474A1/de
Priority to US15/441,441 priority patent/US10048592B2/en
Priority to US16/050,161 priority patent/US10591825B2/en
Priority to JP2020098462A priority patent/JP7208953B2/ja
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE102014218474.6A 2014-09-15 2014-09-15 Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie Ceased DE102014218474A1 (de)

Priority Applications (12)

Application Number Priority Date Filing Date Title
DE102014218474.6A DE102014218474A1 (de) 2014-09-15 2014-09-15 Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
KR1020177009820A KR102469060B1 (ko) 2014-09-15 2015-09-07 Euv 마이크로리소그라피를 위한 투영 렌즈, 투영 노광 장치 및 투영 노광 방법
JP2017533703A JP6714595B2 (ja) 2014-09-15 2015-09-07 Ｅｕｖマイクロリソグラフィのための投影レンズ、投影露光装置、及び投影露光方法
CN202010179331.1A CN111505909A (zh) 2014-09-15 2015-09-07 投射镜头、投射曝光设备和euv微光刻的投射曝光方法
EP15759468.0A EP3195060B1 (en) 2014-09-15 2015-09-07 Projection lens, projection exposure apparatus and projection exposure method for euv microlithography
CN201580049768.0A CN107077074B (zh) 2014-09-15 2015-09-07 投射镜头、投射曝光设备和euv微光刻的投射曝光方法
PCT/EP2015/070391 WO2016041805A1 (en) 2014-09-15 2015-09-07 Projection lens, projection exposure apparatus and projection exposure method for euv microlithography
TW104130274A TWI681258B (zh) 2014-09-15 2015-09-14 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法
TW108134443A TWI714278B (zh) 2014-09-15 2015-09-14 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法
US15/441,441 US10048592B2 (en) 2014-09-15 2017-02-24 Projection lens, projection exposure apparatus and projection exposure method for EUV microlithography
US16/050,161 US10591825B2 (en) 2014-09-15 2018-07-31 Projection lens, projection exposure apparatus and projection exposure method for EUV microlithography
JP2020098462A JP7208953B2 (ja) 2014-09-15 2020-06-05 Ｅｕｖマイクロリソグラフィのための投影レンズ、投影露光装置、及び投影露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102014218474.6A DE102014218474A1 (de) 2014-09-15 2014-09-15 Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie

Publications (1)

Publication Number Publication Date
DE102014218474A1 true DE102014218474A1 (de) 2016-03-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014218474.6A Ceased DE102014218474A1 (de) 2014-09-15 2014-09-15 Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie

Country Status (8)

Country Link
US (2) US10048592B2 (https=)
EP (1) EP3195060B1 (https=)
JP (2) JP6714595B2 (https=)
KR (1) KR102469060B1 (https=)
CN (2) CN111505909A (https=)
DE (1) DE102014218474A1 (https=)
TW (2) TWI714278B (https=)
WO (1) WO2016041805A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016205072A1 (de) * 2016-03-29 2017-03-16 Carl Zeiss Smt Gmbh Optisches System für die Mikrolithografie sowie Verfahren zum Betreiben eines optischen Systems für die Mikrolithografie
WO2018065183A1 (de) * 2016-10-06 2018-04-12 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und verfahren zur verringerung aus dynamischen beschleunigungen herrührenden deformationen von komponenten der projektionsbelichtungsanlage
WO2018134010A1 (en) * 2017-01-17 2018-07-26 Asml Netherlands B.V. Lithographic apparatus and method
DE102022208204A1 (de) 2022-08-08 2023-08-31 Carl Zeiss Smt Gmbh Verfahren zur Kompensation von Abbildungsfehlern einer EUV-Projektionsbelichtungsanlage

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014218474A1 (de) * 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
DE102016212477A1 (de) * 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
DE102017216679A1 (de) * 2017-09-20 2019-03-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
CN118169959A (zh) * 2017-10-11 2024-06-11 Asml荷兰有限公司 图案化过程的优化流程
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
JP2019124796A (ja) * 2018-01-16 2019-07-25 キヤノン株式会社 結像光学系、画像投射装置およびカメラシステム
DE102019200696B4 (de) * 2019-01-21 2022-02-10 Carl Zeiss Smt Gmbh Vorrichtung, Verfahren und Computerprogram zum Bestimmen einer Position eines Elements auf einer fotolithographischen Maske
JP7357488B2 (ja) * 2019-09-04 2023-10-06 キヤノン株式会社 露光装置、および物品製造方法
CN111381431B (zh) * 2020-05-11 2021-04-13 江苏舜合物联网科技有限公司 投影画面跟随可卷曲屏幕同步升降或同步平移的实现方法
JP2022022912A (ja) * 2020-07-10 2022-02-07 キヤノン株式会社 露光装置および物品製造方法
CN113031201B (zh) * 2021-03-15 2022-02-11 中国科学院长春光学精密机械与物理研究所 一种在轨补偿主镜曲率半径误差影响的调整方法
DE102023130957A1 (de) * 2023-11-08 2025-05-08 Carl Zeiss Smt Gmbh Verfahren zum Bestimmen wenigstens eines Manipulatorfreiheitsgrads, Verfahren zum Definieren wenigstens eines virtuellen Manipulators, Verfahren zum Betrieb einer Projektionsbelichtungsanlage sowie Projektionsbelichtungsanlage

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EP1039510A1 (en) 1997-11-14 2000-09-27 Nikon Corporation Exposure apparatus and method of manufacturing the same, and exposure method
US6770894B1 (en) * 1999-02-26 2004-08-03 Carl Zeiss Smt Ag Illumination system with field mirrors for producing uniform scanning energy
DE102004014766A1 (de) 2003-04-02 2004-10-21 Carl Zeiss Smt Ag Verfahren zur Verzeichnungskorrektur in einer mikrolithographischen Projektionsbelichtungsanlage
US20070058269A1 (en) 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Catoptric objectives and systems using catoptric objectives
WO2011120821A1 (en) 2010-03-30 2011-10-06 Carl Zeiss Smt Gmbh Method for operating a projection exposure apparatus with correction of imaging aberrations induced by the mask
WO2012034995A2 (en) 2010-09-15 2012-03-22 Carl Zeiss Smt Gmbh Imaging optical system
WO2012041459A2 (en) 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Imaging optical system for microlithography

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US6853440B1 (en) 2003-04-04 2005-02-08 Asml Netherlands B.V. Position correction in Y of mask object shift due to Z offset and non-perpendicular illumination
JP2005166778A (ja) * 2003-12-01 2005-06-23 Canon Inc 露光装置、デバイスの製造方法
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DE102014218474A1 (de) 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1039510A1 (en) 1997-11-14 2000-09-27 Nikon Corporation Exposure apparatus and method of manufacturing the same, and exposure method
US6770894B1 (en) * 1999-02-26 2004-08-03 Carl Zeiss Smt Ag Illumination system with field mirrors for producing uniform scanning energy
DE102004014766A1 (de) 2003-04-02 2004-10-21 Carl Zeiss Smt Ag Verfahren zur Verzeichnungskorrektur in einer mikrolithographischen Projektionsbelichtungsanlage
US7372539B2 (en) 2003-04-02 2008-05-13 Carl Zeiss Smt Ag Method for distortion correction in a microlithographic projection exposure apparatus
US20070058269A1 (en) 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Catoptric objectives and systems using catoptric objectives
WO2011120821A1 (en) 2010-03-30 2011-10-06 Carl Zeiss Smt Gmbh Method for operating a projection exposure apparatus with correction of imaging aberrations induced by the mask
WO2012034995A2 (en) 2010-09-15 2012-03-22 Carl Zeiss Smt Gmbh Imaging optical system
WO2012041459A2 (en) 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Imaging optical system for microlithography

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016205072A1 (de) * 2016-03-29 2017-03-16 Carl Zeiss Smt Gmbh Optisches System für die Mikrolithografie sowie Verfahren zum Betreiben eines optischen Systems für die Mikrolithografie
WO2018065183A1 (de) * 2016-10-06 2018-04-12 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und verfahren zur verringerung aus dynamischen beschleunigungen herrührenden deformationen von komponenten der projektionsbelichtungsanlage
CN109804315A (zh) * 2016-10-06 2019-05-24 卡尔蔡司Smt有限责任公司 投射曝光设备及减小投射曝光设备的部件的来自动态加速度的形变的方法
US10599051B2 (en) 2016-10-06 2020-03-24 Carl Zeiss Smt Gmbh Projection exposure apparatus, and method for reducing deformations, resulting from dynamic accelerations, of components of the projection exposure apparatus
CN109804315B (zh) * 2016-10-06 2021-09-28 卡尔蔡司Smt有限责任公司 投射曝光设备及减小投射曝光设备的部件的来自动态加速度的形变的方法
WO2018134010A1 (en) * 2017-01-17 2018-07-26 Asml Netherlands B.V. Lithographic apparatus and method
DE102022208204A1 (de) 2022-08-08 2023-08-31 Carl Zeiss Smt Gmbh Verfahren zur Kompensation von Abbildungsfehlern einer EUV-Projektionsbelichtungsanlage

Also Published As

Publication number Publication date
KR102469060B1 (ko) 2022-11-22
WO2016041805A1 (en) 2016-03-24
JP2020149070A (ja) 2020-09-17
EP3195060B1 (en) 2018-09-05
CN107077074B (zh) 2020-04-10
JP6714595B2 (ja) 2020-06-24
TWI681258B (zh) 2020-01-01
JP7208953B2 (ja) 2023-01-19
KR20170053713A (ko) 2017-05-16
CN111505909A (zh) 2020-08-07
TWI714278B (zh) 2020-12-21
US10048592B2 (en) 2018-08-14
JP2017528775A (ja) 2017-09-28
US20180364583A1 (en) 2018-12-20
TW201621470A (zh) 2016-06-16
TW202004367A (zh) 2020-01-16
US10591825B2 (en) 2020-03-17
EP3195060A1 (en) 2017-07-26
US20170168399A1 (en) 2017-06-15
CN107077074A (zh) 2017-08-18

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