DE102013105631A8 - Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil - Google Patents

Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil Download PDF

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Publication number
DE102013105631A8
DE102013105631A8 DE102013105631.8A DE102013105631A DE102013105631A8 DE 102013105631 A8 DE102013105631 A8 DE 102013105631A8 DE 102013105631 A DE102013105631 A DE 102013105631A DE 102013105631 A8 DE102013105631 A8 DE 102013105631A8
Authority
DE
Germany
Prior art keywords
optoelectronic
support
semiconductor chip
component
optoelectronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102013105631.8A
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English (en)
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DE102013105631A1 (de
Inventor
Jürgen Holz
Frank Singer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102013105631.8A priority Critical patent/DE102013105631A1/de
Priority to DE112014002623.9T priority patent/DE112014002623B4/de
Priority to US14/889,771 priority patent/US20160141286A1/en
Priority to KR1020157036202A priority patent/KR20160016876A/ko
Priority to PCT/EP2014/060456 priority patent/WO2014191280A1/de
Publication of DE102013105631A1 publication Critical patent/DE102013105631A1/de
Publication of DE102013105631A8 publication Critical patent/DE102013105631A8/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
DE102013105631.8A 2013-05-31 2013-05-31 Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil Withdrawn DE102013105631A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102013105631.8A DE102013105631A1 (de) 2013-05-31 2013-05-31 Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil
DE112014002623.9T DE112014002623B4 (de) 2013-05-31 2014-05-21 Optoelektronisches Bauteil und Herstellungsverfahren hierfür
US14/889,771 US20160141286A1 (en) 2013-05-31 2014-05-21 Carrier For An Optoelectronic Semiconductor Chip And Optoelectronic Component
KR1020157036202A KR20160016876A (ko) 2013-05-31 2014-05-21 광전 반도체 칩을 위한 캐리어 및 광전 소자
PCT/EP2014/060456 WO2014191280A1 (de) 2013-05-31 2014-05-21 Träger für einen optoelektronischen halbleiterchip und optoelektronisches bauteil

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013105631.8A DE102013105631A1 (de) 2013-05-31 2013-05-31 Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil

Publications (2)

Publication Number Publication Date
DE102013105631A1 DE102013105631A1 (de) 2014-12-04
DE102013105631A8 true DE102013105631A8 (de) 2015-02-12

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
DE102013105631.8A Withdrawn DE102013105631A1 (de) 2013-05-31 2013-05-31 Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil
DE112014002623.9T Active DE112014002623B4 (de) 2013-05-31 2014-05-21 Optoelektronisches Bauteil und Herstellungsverfahren hierfür

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE112014002623.9T Active DE112014002623B4 (de) 2013-05-31 2014-05-21 Optoelektronisches Bauteil und Herstellungsverfahren hierfür

Country Status (4)

Country Link
US (1) US20160141286A1 (de)
KR (1) KR20160016876A (de)
DE (2) DE102013105631A1 (de)
WO (1) WO2014191280A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015107526A1 (de) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Modul
DE102015113310B4 (de) * 2015-08-12 2022-08-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
CN106601706B (zh) * 2015-10-16 2019-04-09 中芯国际集成电路制造(上海)有限公司 一种半导体器件和电子装置
DE102018101815A1 (de) 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
FR3102298B1 (fr) * 2019-10-16 2022-07-29 Aledia Procede de protection d'un dispositif optoelectronique contre les decharges electrostatiques
JP2022092294A (ja) * 2020-12-10 2022-06-22 スタンレー電気株式会社 半導体発光装置及び半導体発光素子の支持基板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392296B1 (en) * 1998-08-31 2002-05-21 Micron Technology, Inc. Silicon interposer with optical connections
US6512292B1 (en) * 2000-09-12 2003-01-28 International Business Machines Corporation Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
US7064353B2 (en) * 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection
US20100301349A1 (en) * 2005-01-26 2010-12-02 Harvatek Corporation Wafer level led package structure for increasing light-emitting efficiency and heat-dissipating effect and method for manufacturing the same
TW200818534A (en) * 2006-08-10 2008-04-16 Icemos Technology Corp Method of manufacturing a photodiode array with through-wafer vias
KR101064026B1 (ko) * 2009-02-17 2011-09-08 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법
DE102009053064A1 (de) * 2009-11-13 2011-05-19 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements
DE102010027679A1 (de) * 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010045783A1 (de) 2010-09-17 2012-03-22 Osram Opto Semiconductors Gmbh Trägersubstrat für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement
US8492272B2 (en) * 2011-07-29 2013-07-23 International Business Machines Corporation Passivated through wafer vias in low-doped semiconductor substrates
US20130168796A1 (en) 2012-01-04 2013-07-04 General Electric Company Photodiode arrays and methods of fabrication

Also Published As

Publication number Publication date
DE112014002623B4 (de) 2021-08-19
US20160141286A1 (en) 2016-05-19
KR20160016876A (ko) 2016-02-15
DE112014002623A5 (de) 2016-03-10
DE102013105631A1 (de) 2014-12-04
WO2014191280A1 (de) 2014-12-04

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