DE102012207377A1 - Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie - Google Patents
Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie Download PDFInfo
- Publication number
- DE102012207377A1 DE102012207377A1 DE102012207377A DE102012207377A DE102012207377A1 DE 102012207377 A1 DE102012207377 A1 DE 102012207377A1 DE 102012207377 A DE102012207377 A DE 102012207377A DE 102012207377 A DE102012207377 A DE 102012207377A DE 102012207377 A1 DE102012207377 A1 DE 102012207377A1
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- Germany
- Prior art keywords
- illumination
- pupil
- optics
- field
- imaged
- Prior art date
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- Ceased
Links
- 238000005286 illumination Methods 0.000 title claims abstract description 237
- 230000003287 optical effect Effects 0.000 title claims abstract description 34
- 238000001459 lithography Methods 0.000 title claims abstract description 7
- 210000001747 pupil Anatomy 0.000 claims abstract description 147
- 238000003384 imaging method Methods 0.000 claims abstract description 41
- 230000003993 interaction Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000001419 dependent effect Effects 0.000 claims description 5
- 238000013507 mapping Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000000875 corresponding effect Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
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- 230000009467 reduction Effects 0.000 description 4
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- 238000013461 design Methods 0.000 description 3
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- 238000005259 measurement Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 238000013041 optical simulation Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
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- 235000016709 nutrition Nutrition 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000001179 pupillary effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Microscoopes, Condenser (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012207377A DE102012207377A1 (de) | 2012-05-03 | 2012-05-03 | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
| PCT/EP2013/058171 WO2013164207A1 (en) | 2012-05-03 | 2013-04-19 | Illumination optical unit and optical system for euv projection lithography |
| KR1020147033758A KR102092365B1 (ko) | 2012-05-03 | 2013-04-19 | Euv 투영 리소그래피용 조명 광학 유닛 및 광학 시스템 |
| JP2015509363A JP5979693B2 (ja) | 2012-05-03 | 2013-04-19 | Euv投影リソグラフィのための照明光学ユニット及び光学系 |
| TW106136162A TWI633399B (zh) | 2012-05-03 | 2013-05-02 | 用於euv投射微影之照射光學單元與光學系統 |
| TW102115781A TWI607286B (zh) | 2012-05-03 | 2013-05-02 | 用於euv投射微影之照射光學單元與光學系統 |
| US14/510,725 US20150042974A1 (en) | 2012-05-03 | 2014-10-09 | Illumination optical unit and optical system for euv projection lithography |
| US16/598,408 US10976668B2 (en) | 2012-05-03 | 2019-10-10 | Illumination optical unit and optical system for EUV projection lithography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012207377A DE102012207377A1 (de) | 2012-05-03 | 2012-05-03 | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102012207377A1 true DE102012207377A1 (de) | 2013-11-07 |
Family
ID=49384467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102012207377A Ceased DE102012207377A1 (de) | 2012-05-03 | 2012-05-03 | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20150042974A1 (https=) |
| JP (1) | JP5979693B2 (https=) |
| KR (1) | KR102092365B1 (https=) |
| DE (1) | DE102012207377A1 (https=) |
| TW (2) | TWI633399B (https=) |
| WO (1) | WO2013164207A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016222033A1 (de) | 2016-11-10 | 2016-12-29 | Carl Zeiss Smt Gmbh | Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012207377A1 (de) | 2012-05-03 | 2013-11-07 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
| DE102014203188A1 (de) | 2014-02-21 | 2015-08-27 | Carl Zeiss Smt Gmbh | Verfahren zur Beleuchtung eines Objektfeldes einer Projektionsbelichtungsanlage |
| WO2016128253A1 (de) * | 2015-02-11 | 2016-08-18 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die euv-projektionslithografie |
| US9875534B2 (en) * | 2015-09-04 | 2018-01-23 | Kla-Tencor Corporation | Techniques and systems for model-based critical dimension measurements |
| EP3453317B1 (en) * | 2017-09-08 | 2021-07-14 | Tobii AB | Pupil radius compensation |
| DE102019214269A1 (de) * | 2019-09-19 | 2021-03-25 | Carl Zeiss Smt Gmbh | Facettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage |
| DE102020210829A1 (de) | 2020-08-27 | 2022-03-03 | Carl Zeiss Smt Gmbh | Pupillenfacettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage |
| DE102021203961B3 (de) | 2021-04-21 | 2022-08-25 | Carl Zeiss Smt Gmbh | Pupillenblende für eine Beleuchtungsoptik eines Metrologiesystems, Beleuchtungsoptik und Metrologiesystem |
| DE102021120952B3 (de) * | 2021-08-11 | 2022-11-10 | Carl Zeiss Smt Gmbh | Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop |
| DE102021213827B4 (de) * | 2021-12-06 | 2026-04-16 | Carl Zeiss Smt Gmbh | Verfahren zur Optimierung einer Pupillen-Blendenform zur Nachbildung von Beleuchtungs- und Abbildungseigenschaften eines optischen Produktionssystems bei der Beleuchtung und Abbildung eines Objekts mittels eines optischen Messsystems |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420436A (en) | 1992-11-27 | 1995-05-30 | Hitachi, Ltd. | Methods for measuring optical system, and method and apparatus for exposure using said measuring method |
| EP1225481A2 (de) | 2001-01-23 | 2002-07-24 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Kollektor für Beleuchtungssysteme mit einer Wellenlänge 193 nm |
| US20040137677A1 (en) * | 2002-11-28 | 2004-07-15 | Asml Netherlands B.V. | Device manufacturing method and computer program |
| US6859515B2 (en) | 1998-05-05 | 2005-02-22 | Carl-Zeiss-Stiftung Trading | Illumination system, particularly for EUV lithography |
| DE102007019570A1 (de) | 2007-04-25 | 2008-10-30 | Carl Zeiss Smt Ag | Spiegelanordnung, Kontaktierungsanordnung und optisches System |
| US20090097001A1 (en) * | 2007-10-15 | 2009-04-16 | Qimonda Ag | Non-Telecentric Lithography Apparatus and Method of Manufacturing Integrated Circuits |
| DE102008000990B3 (de) | 2008-04-04 | 2009-11-05 | Carl Zeiss Smt Ag | Vorrichtung zur mikrolithographischen Projektionsbelichtung und Verfahren zum Prüfen einer derartigen Vorrichtung |
| DE102010003167A1 (de) | 2009-05-29 | 2010-10-14 | Carl Zeiss Smt Ag | Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage, sowie Beleuchtungseinrichtung |
| WO2011076500A1 (en) | 2009-12-23 | 2011-06-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2011154244A1 (en) | 2010-06-08 | 2011-12-15 | Carl Zeiss Smt Gmbh | Illumination optical system for euv projection lithography |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5680588A (en) * | 1995-06-06 | 1997-10-21 | International Business Machines Corporation | Method and system for optimizing illumination in an optical photolithography projection imaging system |
| US6573975B2 (en) * | 2001-04-04 | 2003-06-03 | Pradeep K. Govil | DUV scanner linewidth control by mask error factor compensation |
| JP2004252358A (ja) * | 2003-02-21 | 2004-09-09 | Canon Inc | 反射型投影光学系及び露光装置 |
| DE602005018648D1 (de) * | 2004-07-14 | 2010-02-11 | Zeiss Carl Smt Ag | Katadioptrisches projektionsobjektiv |
| JP4701030B2 (ja) * | 2005-07-22 | 2011-06-15 | キヤノン株式会社 | 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム |
| DE102006059024A1 (de) * | 2006-12-14 | 2008-06-19 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil |
| US8937706B2 (en) * | 2007-03-30 | 2015-01-20 | Asml Netherlands B.V. | Lithographic apparatus and method |
| JP2009043933A (ja) | 2007-08-08 | 2009-02-26 | Canon Inc | 露光装置、調整方法、露光方法及びデバイス製造方法 |
| DE102008001511A1 (de) * | 2008-04-30 | 2009-11-05 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
| DE102008042438B4 (de) * | 2008-09-29 | 2010-11-04 | Carl Zeiss Smt Ag | Mikrolithographie-Projektionsbelichtungsanlage mit mindestens zwei Arbeitszuständen |
| JP6041304B2 (ja) * | 2009-03-27 | 2016-12-07 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Euvマイクロリソグラフィ用の照明光学系、この種の照明光学系用のeuv減衰器、及びこの種の照明光学系を有する照明系及び投影露光装置 |
| KR101373380B1 (ko) * | 2009-07-17 | 2014-03-13 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 투영 노광 장치 및 그에 포함된 광학 표면에 관한 파라미터의 측정 방법 |
| DE102009054540B4 (de) * | 2009-12-11 | 2011-11-10 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Mikrolithographie |
| KR101727783B1 (ko) * | 2010-06-15 | 2017-04-17 | 칼 짜이스 에스엠테 게엠베하 | Euv 리소그래피를 위한 마스크, euv 리소그래피 시스템 그리고 마스크의 결상을 최적화하는 방법 |
| DE102010041746A1 (de) | 2010-09-30 | 2012-04-05 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung |
| DE102012207377A1 (de) | 2012-05-03 | 2013-11-07 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
-
2012
- 2012-05-03 DE DE102012207377A patent/DE102012207377A1/de not_active Ceased
-
2013
- 2013-04-19 JP JP2015509363A patent/JP5979693B2/ja active Active
- 2013-04-19 KR KR1020147033758A patent/KR102092365B1/ko active Active
- 2013-04-19 WO PCT/EP2013/058171 patent/WO2013164207A1/en not_active Ceased
- 2013-05-02 TW TW106136162A patent/TWI633399B/zh active
- 2013-05-02 TW TW102115781A patent/TWI607286B/zh active
-
2014
- 2014-10-09 US US14/510,725 patent/US20150042974A1/en not_active Abandoned
-
2019
- 2019-10-10 US US16/598,408 patent/US10976668B2/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420436A (en) | 1992-11-27 | 1995-05-30 | Hitachi, Ltd. | Methods for measuring optical system, and method and apparatus for exposure using said measuring method |
| US6859515B2 (en) | 1998-05-05 | 2005-02-22 | Carl-Zeiss-Stiftung Trading | Illumination system, particularly for EUV lithography |
| EP1225481A2 (de) | 2001-01-23 | 2002-07-24 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Kollektor für Beleuchtungssysteme mit einer Wellenlänge 193 nm |
| US20040137677A1 (en) * | 2002-11-28 | 2004-07-15 | Asml Netherlands B.V. | Device manufacturing method and computer program |
| DE102007019570A1 (de) | 2007-04-25 | 2008-10-30 | Carl Zeiss Smt Ag | Spiegelanordnung, Kontaktierungsanordnung und optisches System |
| US20090097001A1 (en) * | 2007-10-15 | 2009-04-16 | Qimonda Ag | Non-Telecentric Lithography Apparatus and Method of Manufacturing Integrated Circuits |
| DE102008000990B3 (de) | 2008-04-04 | 2009-11-05 | Carl Zeiss Smt Ag | Vorrichtung zur mikrolithographischen Projektionsbelichtung und Verfahren zum Prüfen einer derartigen Vorrichtung |
| DE102010003167A1 (de) | 2009-05-29 | 2010-10-14 | Carl Zeiss Smt Ag | Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage, sowie Beleuchtungseinrichtung |
| WO2011076500A1 (en) | 2009-12-23 | 2011-06-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2011154244A1 (en) | 2010-06-08 | 2011-12-15 | Carl Zeiss Smt Gmbh | Illumination optical system for euv projection lithography |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016222033A1 (de) | 2016-11-10 | 2016-12-29 | Carl Zeiss Smt Gmbh | Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage |
| DE102017212919A1 (de) | 2016-11-10 | 2018-05-17 | Carl Zeiss Smt Gmbh | Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Beleuchtungssystem in einer EUV-Projektionsbelichtungsanlage |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150013660A (ko) | 2015-02-05 |
| JP5979693B2 (ja) | 2016-08-24 |
| TWI633399B (zh) | 2018-08-21 |
| KR102092365B1 (ko) | 2020-03-24 |
| WO2013164207A1 (en) | 2013-11-07 |
| TW201805735A (zh) | 2018-02-16 |
| TWI607286B (zh) | 2017-12-01 |
| TW201411292A (zh) | 2014-03-16 |
| US20150042974A1 (en) | 2015-02-12 |
| JP2015517729A (ja) | 2015-06-22 |
| US10976668B2 (en) | 2021-04-13 |
| US20200041911A1 (en) | 2020-02-06 |
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