KR102092365B1 - Euv 투영 리소그래피용 조명 광학 유닛 및 광학 시스템 - Google Patents

Euv 투영 리소그래피용 조명 광학 유닛 및 광학 시스템 Download PDF

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KR102092365B1
KR102092365B1 KR1020147033758A KR20147033758A KR102092365B1 KR 102092365 B1 KR102092365 B1 KR 102092365B1 KR 1020147033758 A KR1020147033758 A KR 1020147033758A KR 20147033758 A KR20147033758 A KR 20147033758A KR 102092365 B1 KR102092365 B1 KR 102092365B1
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illumination
imaging
pupil
optical unit
telecentricity
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KR20150013660A (ko
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요르그 짐머만
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Microscoopes, Condenser (AREA)
KR1020147033758A 2012-05-03 2013-04-19 Euv 투영 리소그래피용 조명 광학 유닛 및 광학 시스템 Active KR102092365B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102012207377.9 2012-05-03
DE102012207377A DE102012207377A1 (de) 2012-05-03 2012-05-03 Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
US201261642683P 2012-05-04 2012-05-04
US61/642,683 2012-05-04
PCT/EP2013/058171 WO2013164207A1 (en) 2012-05-03 2013-04-19 Illumination optical unit and optical system for euv projection lithography

Publications (2)

Publication Number Publication Date
KR20150013660A KR20150013660A (ko) 2015-02-05
KR102092365B1 true KR102092365B1 (ko) 2020-03-24

Family

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KR1020147033758A Active KR102092365B1 (ko) 2012-05-03 2013-04-19 Euv 투영 리소그래피용 조명 광학 유닛 및 광학 시스템

Country Status (6)

Country Link
US (2) US20150042974A1 (https=)
JP (1) JP5979693B2 (https=)
KR (1) KR102092365B1 (https=)
DE (1) DE102012207377A1 (https=)
TW (2) TWI633399B (https=)
WO (1) WO2013164207A1 (https=)

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DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
DE102014203188A1 (de) 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Verfahren zur Beleuchtung eines Objektfeldes einer Projektionsbelichtungsanlage
WO2016128253A1 (de) * 2015-02-11 2016-08-18 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die euv-projektionslithografie
US9875534B2 (en) * 2015-09-04 2018-01-23 Kla-Tencor Corporation Techniques and systems for model-based critical dimension measurements
DE102016222033A1 (de) 2016-11-10 2016-12-29 Carl Zeiss Smt Gmbh Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage
EP3453317B1 (en) * 2017-09-08 2021-07-14 Tobii AB Pupil radius compensation
DE102019214269A1 (de) * 2019-09-19 2021-03-25 Carl Zeiss Smt Gmbh Facettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage
DE102020210829A1 (de) 2020-08-27 2022-03-03 Carl Zeiss Smt Gmbh Pupillenfacettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage
DE102021203961B3 (de) 2021-04-21 2022-08-25 Carl Zeiss Smt Gmbh Pupillenblende für eine Beleuchtungsoptik eines Metrologiesystems, Beleuchtungsoptik und Metrologiesystem
DE102021120952B3 (de) * 2021-08-11 2022-11-10 Carl Zeiss Smt Gmbh Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop
DE102021213827B4 (de) * 2021-12-06 2026-04-16 Carl Zeiss Smt Gmbh Verfahren zur Optimierung einer Pupillen-Blendenform zur Nachbildung von Beleuchtungs- und Abbildungseigenschaften eines optischen Produktionssystems bei der Beleuchtung und Abbildung eines Objekts mittels eines optischen Messsystems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110063598A1 (en) * 2008-04-30 2011-03-17 Carl Zeiss Smt Gmbh Illumination optics for euv microlithography and related system and apparatus
WO2011157643A1 (en) * 2010-06-15 2011-12-22 Carl Zeiss Smt Gmbh Mask for euv lithography, euv lithography system and method for optimising the imaging of a mask

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US5680588A (en) * 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
US6859515B2 (en) 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US6573975B2 (en) * 2001-04-04 2003-06-03 Pradeep K. Govil DUV scanner linewidth control by mask error factor compensation
US7042550B2 (en) * 2002-11-28 2006-05-09 Asml Netherlands B.V. Device manufacturing method and computer program
JP2004252358A (ja) * 2003-02-21 2004-09-09 Canon Inc 反射型投影光学系及び露光装置
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JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
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KR101373380B1 (ko) * 2009-07-17 2014-03-13 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치 및 그에 포함된 광학 표면에 관한 파라미터의 측정 방법
DE102009054540B4 (de) * 2009-12-11 2011-11-10 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Mikrolithographie
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DE102010029765A1 (de) 2010-06-08 2011-12-08 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
DE102010041746A1 (de) 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie

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Publication number Priority date Publication date Assignee Title
US20110063598A1 (en) * 2008-04-30 2011-03-17 Carl Zeiss Smt Gmbh Illumination optics for euv microlithography and related system and apparatus
WO2011157643A1 (en) * 2010-06-15 2011-12-22 Carl Zeiss Smt Gmbh Mask for euv lithography, euv lithography system and method for optimising the imaging of a mask

Also Published As

Publication number Publication date
KR20150013660A (ko) 2015-02-05
JP5979693B2 (ja) 2016-08-24
TWI633399B (zh) 2018-08-21
WO2013164207A1 (en) 2013-11-07
TW201805735A (zh) 2018-02-16
TWI607286B (zh) 2017-12-01
TW201411292A (zh) 2014-03-16
US20150042974A1 (en) 2015-02-12
JP2015517729A (ja) 2015-06-22
US10976668B2 (en) 2021-04-13
US20200041911A1 (en) 2020-02-06
DE102012207377A1 (de) 2013-11-07

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