DE102012005428B4 - Vorrichtung zum Bestimmen der Temperatur eines Substrats - Google Patents

Vorrichtung zum Bestimmen der Temperatur eines Substrats Download PDF

Info

Publication number
DE102012005428B4
DE102012005428B4 DE102012005428.9A DE102012005428A DE102012005428B4 DE 102012005428 B4 DE102012005428 B4 DE 102012005428B4 DE 102012005428 A DE102012005428 A DE 102012005428A DE 102012005428 B4 DE102012005428 B4 DE 102012005428B4
Authority
DE
Germany
Prior art keywords
radiation
substrate
temperature
pyrometer
radiation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102012005428.9A
Other languages
German (de)
English (en)
Other versions
DE102012005428A1 (de
Inventor
Hartmut Rick
Dr. Lerch Wilfried
Dr. Nieß Jürgen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Photovoltaics AG
HQ Dielectrics GmbH
Original Assignee
Centrotherm Photovoltaics AG
HQ Dielectrics GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics AG, HQ Dielectrics GmbH filed Critical Centrotherm Photovoltaics AG
Priority to DE102012005428.9A priority Critical patent/DE102012005428B4/de
Priority to US14/384,223 priority patent/US9805993B2/en
Priority to JP2014561330A priority patent/JP6114762B2/ja
Priority to PCT/EP2013/000807 priority patent/WO2013135394A1/de
Priority to KR1020147029081A priority patent/KR102045393B1/ko
Priority to EP13716726.8A priority patent/EP2825859B1/de
Publication of DE102012005428A1 publication Critical patent/DE102012005428A1/de
Application granted granted Critical
Publication of DE102012005428B4 publication Critical patent/DE102012005428B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0275—Control or determination of height or distance or angle information for sensors or receivers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/07—Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0801—Means for wavelength selection or discrimination
    • G01J5/0802—Optical filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
DE102012005428.9A 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats Active DE102012005428B4 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE102012005428.9A DE102012005428B4 (de) 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats
US14/384,223 US9805993B2 (en) 2012-03-16 2013-03-15 Device for determining the temperature of a substrate
JP2014561330A JP6114762B2 (ja) 2012-03-16 2013-03-15 基板の温度を測定する装置
PCT/EP2013/000807 WO2013135394A1 (de) 2012-03-16 2013-03-15 Vorrichtung zum bestimmen der temperatur eines substrats
KR1020147029081A KR102045393B1 (ko) 2012-03-16 2013-03-15 기판의 온도를 판정하기 위한 장치 및 기판을 열처리하기 위한 방법
EP13716726.8A EP2825859B1 (de) 2012-03-16 2013-03-15 Vorrichtung zum bestimmen der temperatur eines substrats

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012005428.9A DE102012005428B4 (de) 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats

Publications (2)

Publication Number Publication Date
DE102012005428A1 DE102012005428A1 (de) 2013-09-19
DE102012005428B4 true DE102012005428B4 (de) 2014-10-16

Family

ID=48128252

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012005428.9A Active DE102012005428B4 (de) 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats

Country Status (6)

Country Link
US (1) US9805993B2 (https=)
EP (1) EP2825859B1 (https=)
JP (1) JP6114762B2 (https=)
KR (1) KR102045393B1 (https=)
DE (1) DE102012005428B4 (https=)
WO (1) WO2013135394A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636934B2 (en) 2015-09-23 2020-04-28 centrotherm international AG Method and device for passivating defects in semiconductor substrates
WO2020005366A1 (en) 2018-06-26 2020-01-02 Applied Materials, Inc. Method and apparatus for measuring temperature
WO2020068338A1 (en) * 2018-09-24 2020-04-02 Applied Materials, Inc. Atomic oxygen and ozone device for cleaning and surface treatment
CN110124837B (zh) * 2019-05-17 2021-04-23 西安奕斯伟硅片技术有限公司 一种硅晶体的破碎方法及热处理装置
JP7370763B2 (ja) * 2019-08-22 2023-10-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP7338441B2 (ja) * 2019-12-13 2023-09-05 ウシオ電機株式会社 光加熱装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124726A (ja) * 1987-11-09 1989-05-17 Toshiba Corp 加熱装置
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
US5318362A (en) * 1990-04-10 1994-06-07 Luxtron Corporation Non-contact techniques for measuring temperature of radiation-heated objects
DE69523424T2 (de) * 1994-12-19 2002-06-27 Applied Materials, Inc. Verfahren und Gerät zur Messung der Substrattemperatur
DE69932165T2 (de) * 1998-08-06 2007-05-16 Applied Materials, Inc., Santa Clara Ein sensor zum messen einer substrattemperatur

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940703996A (ko) * 1992-11-03 1994-12-12 알.밴 오버스트래텐 가열챔버내 물체의 가열 조정방법 및 그 장치(System For The Controlled Heating Of An Object)
US5624590A (en) * 1993-04-02 1997-04-29 Lucent Technologies, Inc. Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique
US6179466B1 (en) * 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
JP2000105152A (ja) * 1998-09-29 2000-04-11 Toshiba Corp 温度測定方法及びその装置
US6541287B2 (en) 1998-03-19 2003-04-01 Kabushiki Kaisha Toshiba Temperature measuring method and apparatus, measuring method for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers
DE19964181B4 (de) * 1999-02-10 2005-12-08 Steag Rtp Systems Gmbh Vorrichtung zum Messen der Tempertur von Substraten
JP2002015982A (ja) * 2000-06-30 2002-01-18 Ibiden Co Ltd 赤外線温度センサ付きホットプレート
DE10032465A1 (de) * 2000-07-04 2002-01-31 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Objekten
US6849831B2 (en) * 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
US7734439B2 (en) * 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
US6835914B2 (en) * 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
JP4864396B2 (ja) * 2005-09-13 2012-02-01 株式会社東芝 半導体素子の製造方法、及び、半導体素子の製造装置
US7543981B2 (en) * 2006-06-29 2009-06-09 Mattson Technology, Inc. Methods for determining wafer temperature

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124726A (ja) * 1987-11-09 1989-05-17 Toshiba Corp 加熱装置
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
US5318362A (en) * 1990-04-10 1994-06-07 Luxtron Corporation Non-contact techniques for measuring temperature of radiation-heated objects
DE69523424T2 (de) * 1994-12-19 2002-06-27 Applied Materials, Inc. Verfahren und Gerät zur Messung der Substrattemperatur
DE69932165T2 (de) * 1998-08-06 2007-05-16 Applied Materials, Inc., Santa Clara Ein sensor zum messen einer substrattemperatur

Also Published As

Publication number Publication date
KR102045393B1 (ko) 2019-11-15
WO2013135394A1 (de) 2013-09-19
US9805993B2 (en) 2017-10-31
DE102012005428A1 (de) 2013-09-19
KR20140140081A (ko) 2014-12-08
JP2015513094A (ja) 2015-04-30
JP6114762B2 (ja) 2017-04-12
US20150087085A1 (en) 2015-03-26
EP2825859B1 (de) 2022-10-19
EP2825859A1 (de) 2015-01-21

Similar Documents

Publication Publication Date Title
DE102012005428B4 (de) Vorrichtung zum Bestimmen der Temperatur eines Substrats
DE112011103113B4 (de) Reflektivitätsmessverfahren, Membrandickenmessvorrichtung und Membrandickenmessverfahren
EP0143282B1 (de) Verfahren zur berührungslosen, emissionsgradunabhängigen Strahlungsmessung der Temperatur eines Objektes
DE69912061T2 (de) Verbesserungen bezüglich der Messung einer Teilchengrössenverteilung
DE102007042779B4 (de) Kalibrationssubstrat und -verfahren
EP0701686A1 (de) Gleichzeitiges bestimmen von schichtdicke und substrattemperatur während des beschichtens
DE112010004023T5 (de) Filmdickenmessvorrichtung und Filmdickenmessverfahren
EP2856096B1 (de) Optisches messsystem mit polarisationskompensation, sowie entsprechendes verfahren
DE112016006185T5 (de) System und Verfahren zur Inspektion unnd Metrologie von Halbleiterwafern
EP1507137B1 (de) Verfahren und Vorrichtung zur polarisationsabhängigen und ortsaufgelösten Untersuchung einer Oberfläche oder einer Schicht
DE102019114167A1 (de) Optische Messvorrichtung und Verfahren
EP0153313B1 (de) Mehrstrahl-messanordnung
WO2004059271A1 (de) Verfahren zum bestimmen der temperatur eines halbleiterwafers in einer schnelheizanlage
DE3880748T2 (de) Verfahren und vorrichtung zur messung oder bestimmung einer oder mehrerer eigenschaften oder der identitaet einer probe.
DE10329107B4 (de) Verfahren zum Bestimmung wenigstens einer Zustandsvariablen aus einem Modell eines RTP-Systems
DE112016001974T5 (de) Verfahren zur Brennweiten- und Drehwinkel-Messung mittels eines Fabry-Pérot-Etalons
EP0000170A1 (de) Verfahren und Vorrichtung zur Steuerung von Entwicklungs-oder Ätzprozessen
EP0443702A2 (de) Messverfahren zur Bestimmung kleiner Lichtabsorptionen
EP1395800A1 (de) Verfahren zur bestimmung von temperaturen an halbleiterbauelementen
DE69918661T2 (de) Verfahren und Vorrichtung zum Messen von Musterstrukturen
DE3737426A1 (de) Interferometer
DE10258713B4 (de) Verfahren und Vorrichtung zur Bestimmung charakteristischer Schichtparameter bei hohen Temperaturen
DE102007062825A1 (de) Gitterspiegel zur Online-Überwachung eines Laserstrahls und Überwachungsvorrichtung damit
DE2153077A1 (de) Verfahren zur beruehrungslosen messung der oberflaechentemperatur an einem objekt
EP3324161A1 (de) Spektrometer und verfahren zur justierung eines filterarrays

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R082 Change of representative

Representative=s name: WAGNER & GEYER PARTNERSCHAFT PATENT- UND RECHT, DE

R081 Change of applicant/patentee

Owner name: HQ-DIELECTRICS GMBH, DE

Free format text: FORMER OWNER: CENTROTHERM THERMAL SOLUTIONS G, HQ-DIELECTRICS GMBH, , DE

Effective date: 20140226

Owner name: CENTROTHERM PHOTOVOLTAICS AG, DE

Free format text: FORMER OWNER: CENTROTHERM THERMAL SOLUTIONS G, HQ-DIELECTRICS GMBH, , DE

Effective date: 20140226

Owner name: HQ-DIELECTRICS GMBH, DE

Free format text: FORMER OWNERS: CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG, 89143 BLAUBEUREN, DE; HQ-DIELECTRICS GMBH, 89160 DORNSTADT, DE

Effective date: 20140226

Owner name: CENTROTHERM PHOTOVOLTAICS AG, DE

Free format text: FORMER OWNERS: CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG, 89143 BLAUBEUREN, DE; HQ-DIELECTRICS GMBH, 89160 DORNSTADT, DE

Effective date: 20140226

R082 Change of representative

Representative=s name: WAGNER & GEYER PARTNERSCHAFT PATENT- UND RECHT, DE

Effective date: 20140226

Representative=s name: WAGNER & GEYER PARTNERSCHAFT MBB PATENT- UND R, DE

Effective date: 20140226

R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final